EE2255 Microelectronics

HW#4 Due 11/13/2023

1. For the BJT (β = 60) circuit shown below, determine the collector and base current
using two different approaches:
(a) Assume VBE,on = 0.8 V directly. (5/100)
(b) Assume IS = 10-17 A. (10/100)
(c) Based on the results obtained in (a) with VBE,on = 0.8 V, plot the small-signal
model and determine the model parameters. Determine the small-signal gain (assume
input is between the base node and ground, and R1 can be simplified as an open
circuit) for both VA = ∞ and VA = 40 V. (10/100)

100 Ω
VCC = 5 V
+
vout
20 kΩ -

2. Textbook problem 4.41 (15/100).

3. An NMOS transistor in 20 nm technology has the parameters of µnCox= 750 µA/V2 and
VTH= 0.4 V. The transistor is operated with a very small VDS to function as a variable
resistor ranging in value from 50 Ω to 300 Ω.
(a) Determine the range required for W for the desired minimum and maximum
resistances if VGS is 0.6 V. (10/100)
(b) Determine the range required for VGS for the desired minimum and maximum
resistance if W= 40 µm, (10/100)
4. Textbook problem 6.27 (a) (b) (c). (15/100)

1
5. SPICE Problem: analyze the circuit based on problem 1 using LTspice. Assume β =
60, VA= 40 V, and IS= 10-17 A for the BJT.
(a) Determine the base and collector current using LTSpice. Compared with the results
obtained in problem 1 (hint: run .op in LTspice to find the DC current). (10/100)
(b) Determine the small-signal gain as a common-emitter amplifier (input at base and
output at collector) (hint: run .tf in LTspice to find the AC gain). (10/100)
(c) Find the maximum allowed RC for Q1 to operate as a common-emitter amplifier at the
edge of soft saturation (VCE = 400 mV) using LTspice by iteration. Determine the small-
signal gain under this condition. (5/100)

R1