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EN1802 - Basic Electronics

S1: Introduction
S2 : Materials used in Electronics

By : Dr. S. Thayaparan

Source of Origin: 1. ‘Basic Electronics’ Lecture Notes, ENTC 2010


2. http://cktse.eie.polyu.edu.hk/eie209 By Prof. Michael Tse
3. http://en.wikipedia.org/wiki/Diode
Course Outline

1. Introduction
2. Materials used in Electronics
3. Diodes, Diode Circuits and Applications
4. Bipolar Junction Transistors and Circuits
5. Field Effect Transistors and Circuits
6. Integrated Circuits and Amplifiers
7. Logic Gates and Circuits

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History

Ambrose Fleming and his Invention – 1904


Sir John Ambrose Fleming (1849–1945) was an English electrical
engineer and physicist, known primarily for inventing in 1904 the first
vacuum tube.
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History

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Vacuum Diode

1. Vacuum diode supports


current flow through it in
only one direction
2. Heated cathode emits
electrons
3. Anode collects electrons
4. Microwave oven has a
specialized vacuum diode
that sits inside a magnetic
field

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History

Lee de Forest and his Invention - 1907

Lee De Forest (1873 – 1961) was an American inventor with


over 180 patents to his credit. He invented the Audion (vaccum
tu e a plifier . He is o e of the fathers of the "ele tro i age“
, as the Audion helped to usher in the widespread use of
electronics. He is also credited with one of the principal
inventions which brought sound to motion pictures.

Then Things followed in suit


1900 – 1940 s
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Vacuum Tube Amplifier
1. De Forest's Audion tube came to be known as the
triode tube, because it had three elements:
filament, grid, and plate
2. Low to medium power valve amplifiers for
frequencies below the microwaves were largely Schematic symbol for an
replaced by solid state amplifiers during the 1960s indirectly heated triode
and 1970s
3. Valve amplifiers are used for applications such as
guitar amplifiers, satellite transponders such as
DirecTV and GPS, audiophile stereo amplifiers,
military applications (such as radar) and very high
power radio and UHF television transmitters

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History
Vacuum Tube era

• Vacuum Computers
• Vacuum Memories
• Vacuum Radios
• Vacuum TV

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History
Everything changed with the invention of
the transistor, at Bell Labs in 1947 by
William Shockley, John Bardeen, and
Walter Brattain, all of whom won the
1956 Nobel Prize in physics for their
efforts

Transistor era

• Transistor Computers
• Transistor Memories
• Transistor Radios
• Transistor TV

But then came the interconnection Problem


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History

if you can make all the separate


components out of semiconductor
material, why not make them—and all the
wires that connect them together—on the
same piece of semiconductor material?

Integration Era
SSI: Small-scale Integration, Gates< 10 ’s
MSl: Medium-scale Integration, Gates< 1000 ’s
LSl: Large-scale Integration, Gates> 1000 id ’s
VLSI: Very Large-scale Integration, Gates>100,000 ’s
SoC: Million Gate, Software & Hardware id ’s

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Where are we now ?

Billions of transistors on a chip

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Where are we now ?

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Electronic Products - Some Examples

• Age of electronics
– microcontrollers, DSPs,
and other VLSI chips are
everywhere Digital Camera Camcorder
Cell phone
• Electronics of today
and tomorrow
– higher performance
(speed) circuits
– low power circuits for
portable applications
– more mixed signal Game Console
emphasis MP3/CD Player
• wireless hardware Laptop
• high perfor a e sig al pro essi g
• se sors a d i rosyste s
PDA
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Examples of Printed Circuit Board Designs

CAD design of a high speed 6 layer PCB The 6 layer PCB once manufactured
By ELECTROSOFT ENGINEERING and assembled By ELECTROSOFT
ENGINEERING

Source of Origin : ELECTROSOFT ENGINEERING webpage


http://www.pcb.electrosoft-engineering.com/design-examples-printed-circuit-
boards.html
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Integrated Circuits (IC) Examples

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Decapsulated IC - I

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Decapsulated IC - II

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Semiconductor - N Type
• Pure silicon has few free electrons and is quite resistive
• Silicon is normally doped with other elements to
increase its conductivity
• Dopants, like phosphor (P), arsenic (As), and Antimony
(Sb) easily give up one of their electrons to the impure
silicon
• These donated electrons are free to move about the
silicon, and its conductivity increases dramatically
• N-type semiconductor with N-type dopant
• N-type dopant has 5 valance electron
• Minority carriers are the holes from base semiconductor
• Majority carriers are the electrons from n-type dopant
and base semiconductor

Note : valence electrons are the electrons of an atom that


can participate in the formation of chemical bonds with
other atoms
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Semiconductor - P Type
• Dopants, like boron(B), indium (In), and aluminum(Al)
grab electrons from the surrounding silicon atoms,
leaving positively charged silicon ions behind
• Positive silicon ions try to lessen their charge by
grabbing electrons from their neighbors
• P-type dopant has 3 valance electron
• P-type semiconductor with P-type dopant
• Majority carriers are the holes from p-type dopant and
base semiconductor
• Minority carriers are the electrons from base
semiconductor

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PN JUNCTION

P N
e e e e e e e e

e e e e e e e e

e e e e e e e e

e e e e e e e e

e e e e e e e e

VB

P N
- - +
e e
+ e e e e e e

- - +
e e
+ e e e e e e

- - +
e e
+ e e e e e e

- - +
e e
+ e e e e e e

- - +
e e
+ e e e e e e

Depletion region
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Diode

Note : Depletion region is formed from a conducting region by removal of all free
charge carriers, leaving none to carry a current
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Semiconductor Diodes
• Diodes are made from semiconducting materials (crystalline silicon) with added
impurities
• Impurities added to create a region with negative charge carriers (electrons), called n-
type semiconductor
• Impurities added to create a region with positive charge carriers (holes), called p-type
semiconductor
• PN Junction is the boundary within the crystal between P region and N region
• The crystal conducts a current of electrons in a direction from the N-type side (called
the cathode) to the P-type side (called the anode), but not in the opposite direction;
that is, a conventional current flows from anode to cathode (opposite to the electron
flow, since electrons have negative charge).
• Another type of semiconductor diode is the Schottky diode, is formed from the contact
between a metal and a semiconductor rather than by a p-n junction
- Metals (molybdenum, platinum, chromium or tungsten) and N-type semiconductor
- Metal sides is the anode and N-type semiconductor is the cathode
- Very fast switching and low forward voltage drop.
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