Professional Documents
Culture Documents
IGBT
IGBT
kr
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs C
• Designed for:
- Motor controls
- Inverter G
- SMPS E
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-247-3
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 46
TC = 100°C 25
Pulsed collector current, tp limited by Tjmax ICpuls 84
Turn off safe operating area - 84
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current IF
TC = 25°C 42
TC = 100°C 25
Diode pulsed current, tp limited by Tjmax IFpuls 80
Gate-emitter voltage VGE ±20 V
2
Short circuit withstand time tSC 10 µs
VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C
Power dissipation Ptot 313 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, Ts 260
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
SKW25N120
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.4 K/W
junction – case
Diode thermal resistance, RthJCD 1.15
junction – case
Thermal resistance, RthJA 40
junction – ambient
1)
Allowed number of short circuits: <1000; time between short circuits: >1s
SKW25N120
1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
SKW25N120
100A
Ic 100A tp=1µs
15µs
80A
IC, COLLECTOR CURRENT
60A 200µs
TC=80°C
1ms
1A
40A
TC=110°C
DC
20A Ic
0.1A
0A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 22Ω)
350W 60A
300W
50A
250W
IC, COLLECTOR CURRENT
POWER DISSIPATION
40A
200W
30A
150W
20A
100W
Ptot,
50W 10A
0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)
SKW25N120
80A 80A
70A 70A
60A 60A
V G E =17V V G E =17V
IC, COLLECTOR CURRENT
20A 20A
10A 10A
0A 0A
0V 1V 2V 3V 4V 5V 6V 7V 0V 1V 2V 3V 4V 5V 6V 7V
80A 6V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
70A
5V
IC=50A
60A
IC, COLLECTOR CURRENT
4V
50A
Tj=+150°C
IC=25A
40A Tj=+25°C 3V
Tj=-40°C
30A IC=12.5A
2V
20A
1V
10A
0A 0V
3V 4V 5V 6V 7V 8V 9V 10V 11V -50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 20V) saturation voltage as a function of junction
temperature
(VGE = 15V)
SKW25N120
1000ns 1000ns
td(off)
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
100ns 100ns
td(on)
tf
td(on)
tr tr
10ns 10ns
0A 20A 40A 60A 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω, VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )
6V
1000ns
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V
td(off)
4V max.
t, SWITCHING TIMES
typ.
3V
100ns
td(on) min.
2V
tr
tf 1V
10ns 0V
-50°C 0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 800V, (IC = 0.3mA)
VGE = +15V/0V, IC = 25A, RG = 22 Ω,
dynamic test circuit in Fig.E )
SKW25N120
25mJ 10mJ
*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery. Ets* due to diode recovery. Ets*
20mJ 8mJ
E, SWITCHING ENERGY LOSSES
Eoff
5mJ 2mJ
0mJ 0mJ
0A 20A 40A 60A 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω, VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )
8mJ
*) Eon and Ets include losses
due to diode recovery. Ets* D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
6mJ
10 K/W 0.2
-1
0.1
Eon*
4mJ 0.05
R,(K/W) τ, (s)
0.07417 0.4990
-2
10 K/W 0.02 0.20899 0.08994
Eoff 0.08065 0.00330
2mJ 0.01 0.03681 0.00038
R1 R2
single pulseC 1 = τ 1 /R 1 C 2 = τ 2 /R 2
0mJ -3
-50°C 0°C 50°C 100°C 150°C 10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal
as a function of junction temperature impedance as a function of pulse width
(inductive load, VCE = 800V, (D = tp / T)
VGE = +15V/0V, IC = 25A, RG = 22 Ω,
dynamic test circuit in Fig.E )
SKW25N120
20V
Ciss
15V
VGE, GATE-EMITTER VOLTAGE
1nF
C, CAPACITANCE
10V
UCE=960V
5V
Coss
Crss
0V 100pF
0nC 100nC 200nC 300nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 25A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30µs 500A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
25µs
tsc, SHORT CIRCUIT WITHSTAND TIME
400A
20µs
300A
15µs
200A
10µs
100A
5µs
0µs 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C) (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)
SKW25N120
500ns 5µC
IF=25A
300ns 3µC
IF=12A
200ns 2µC
IF=12A
100ns 1µC
0ns 0µC
300A/µs 500A/µs 700A/µs 900A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F /d t, DIODE CURRENT SLOPE d i F /d t, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as Figure 22. Typical reverse recovery charge
a function of diode current slope as a function of diode current slope
(VR = 800V, Tj = 150°C, (VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )
50A 400A/µs
40A
DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
IF=25A 300A/µs
30A IF=12A
200A/µs
IF=12A
20A
IF=25A
d i r r / d t,
100A/µs
10A
0A 0A/µs
300A/µs 500A/µs 700A/µs 900A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F /d t, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current Figure 24. Typical diode peak rate of fall of
as a function of diode current slope reverse recovery current as a function of
(VR = 800V, Tj = 150°C, diode current slope
dynamic test circuit in Fig.E ) (VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
SKW25N120
80A 3.0V
IF=50A
2.5V
60A
TJ=150°C IF=25A
2.0V
40A 1.5V
TJ=25°C
IF=12A
1.0V
20A
0.5V
0A 0.0V
0V 1V 2V 3V 4V 0°C 40°C 80°C 120°C
VF, FORWARD VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as
a function of forward voltage a function of junction temperature
0
10 K/W
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.2
0.1
-1
R,(K/W) τ, (s)
10 K/W 0.05 0.05339 0.30438
0.40771 0.09698
0.22473 0.00521
02
0.46420 0.00042
0.
R1 R2
01
0.
single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
-2
10 K/W
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
SKW25N120
PG-TO247-3
SKW25N120
i,v
tr r
IF tS tF
QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m
τ1 τ2 τn
r1 r2 rn
Tj (t)
p(t)
r1 r2 rn
SKW25N120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.