Sheet 5 Solutions NANENG 305

Q1)
−0.25
(a) 𝑝𝑜 = (7 × 1018 ) 𝑒𝑥𝑝 [0.0259]
= 4.50 × 1014 cm−3
𝐸𝑐 − 𝐸𝐹 = 1.42 − 0.25 = 1.17eV
−1.17
𝑛𝑜 = (4.7 × 1017 ) 𝑒𝑥𝑝 [0.0259] = 1.13 × 10−2 cm−3

(b) 𝑘𝑇 = 0.034533eV
400 3/2
𝑁𝜐 = (7 × 1018 ) (300) = 1.078 × 1019 cm−3

400 3/2
𝑁𝑐 = (4.7 × 1017 ) (300) = 7.236 × 1017 cm−3

𝑁 1.078×1019
𝐸𝐹 − 𝐸𝜐 = 𝑘𝑇 𝑙𝑛 ( 𝑝𝜐) = (0.034533) 𝑙𝑛 ( 4.50×1014 ) = 0.3482eV
𝑜

𝐸𝑐 − 𝐸𝐹 = 1.42 − 0.3482 = 1.072eV

−1.07177
𝑛𝑜 = (7.236 × 1017 ) 𝑒𝑥𝑝 [ 0.034533 ] = 2.40 × 104 cm−3

Q2)
2
(a) 𝑛𝑜 = 𝑁𝑐 𝐹1/2 (𝜂𝐹 )
√𝜋

For 𝐸𝐹 = 𝐸𝑐 + 𝑘𝑇⁄2,
𝐸𝐹 −𝐸𝑐 𝑘𝑇 ⁄2
𝜂𝐹 = = = 0.5
𝑘𝑇 𝑘𝑇

𝐹1/2 (𝜂𝐹 ) ≅ 1.0

2
𝑛𝑜 = (2.8 × 1019 )(1.0) = 3.16 × 1019 cm−3
√𝜋
2 2
(c) 𝑛𝑜 = 𝑁𝑐 𝐹1/2 (𝜂𝐹 ) = (4.7 × 1017 )(1.0) = 5.30 × 1017 cm−3
√𝜋 √𝜋

Q3)
(a) Ge: 𝑛𝑖 = 2.4 × 1013 cm−3
𝑁𝑑 𝑁 2 2×1015 2×1015 2
(i)𝑛𝑜 = + √( 2𝑑 ) + 𝑛𝑖2 = + √( ) + (2.4 × 1013 )2
2 2 2
 or
𝑛𝑜 ≅ 𝑁𝑑 = 2 × 1015 cm−3
2
𝑛2 (2.4×1013 )
𝑝𝑜 = 𝑛𝑖 = = 2.88 × 1011 cm−3
𝑜 2×1015

(ii)𝑝𝑜 ≅ 𝑁𝑎 − 𝑁𝑑 = 1016 − 7 × 1015 = 3 × 1015 cm−3

2
𝑛2 (2.4×1013 )
𝑛𝑜 = 𝑝𝑖 =
𝑜 3×1015

= 1.92 × 1011 cm−3

(b) GaAs: 𝑛𝑖 = 1.8 × 106 cm−3
(i)𝑛𝑜 ≅ 𝑁𝑑 = 2 × 1015 cm
2
(1.8×106 )
𝑝𝑜 = = 1.62 × 10−3 cm−3
2×1015

(ii)𝑝𝑜 ≅ 𝑁𝑎 − 𝑁𝑑 = 3 × 1015 cm−3

2
(1.8×106 )
𝑛𝑜 = = 1.08 × 10−3cm−3
3×1015

(c) The result implies that there is only one minority carrier in a volume of
103 cm3.
Q4)
(a) For the donor level
𝑛𝑑 1 1
= 1 𝐸 −𝐸 = 1 0.20
𝑁𝑑 1+ 𝑒𝑥𝑝( 𝑑 𝐹) 1+ 𝑒𝑥𝑝(
2 0.0259
)
2 𝑘𝑇

𝑛𝑑
= 8.85 × 10−4
𝑁𝑑

(b) We have
1
𝑓𝐹 (𝐸) = 𝐸−𝐸𝐹
1+𝑒𝑥𝑝( )
𝑘𝑇

𝐸 − 𝐸𝐹 = (𝐸 − 𝐸𝑐 ) + (𝐸𝑐 − 𝐸𝐹 )
𝐸 − 𝐸𝐹 = 𝑘𝑇 + 0.245
Q5)
(a) 𝑁𝑎 > 𝑁𝑑 ⇒p-type
(b) Silicon:
𝑝𝑜 = 𝑁𝑎 − 𝑁𝑑 = 2.5 × 1013 − 1 × 1013
or
𝑝𝑜 = 1.5 × 1013 cm−3
 Then
2
𝑛2 (1.5×1010 )
𝑛𝑜 = 𝑝𝑖 = = 1.5 × 107 cm−3
𝑜 1.5×1013

Germanium:

𝑁𝑎 −𝑁𝑑 𝑁𝑎 −𝑁𝑑 2 1.5×1013 1.5×1013 2

𝑝𝑜 = + √( ) + 𝑛𝑖2 = ( ) + √( ) + (2.4 × 1013 )2
2 2 2 2

or
𝑝𝑜 = 3.26 × 1013 cm−3
Then
2
𝑛2 (2.4×1013 )
𝑛𝑜 = 𝑝𝑖 = = 1.76 × 1013 cm−3
𝑜 3.264×1013

Gallium Arsenide:
𝑝𝑜 = 𝑁𝑎 − 𝑁𝑑 = 1.5 × 1013 cm−3
and
2
𝑛2 (1.8×106 )
𝑛𝑜 = 𝑝𝑖 = = 0.216cm−3
𝑜 1.5×1013

Q6)
(a) 𝑁𝑑 > 𝑁𝑎 ⇒n-type
(b) 𝑛𝑜 ≅ 𝑁𝑑 − 𝑁𝑎 = 2 × 1015 − 1.2 × 1015
= 8 × 1014 cm−3
2
𝑛2 (1.5×1010 )
𝑝𝑜 = 𝑛𝑖 = = 2.81 × 105 cm−3
𝑜 8×1014

(c) 𝑝𝑜 ≅ (𝑁𝑎′ + 𝑁𝑎 ) − 𝑁𝑑
4 × 1015 = 𝑁𝑎′ + 1.2 × 1015 − 2 × 1015
⇒ 𝑁𝑎′ = 4.8 × 1015 cm−3
2
(1.5×1010 )
𝑛𝑜 = = 5.625 × 104 cm−3
4×1015

Q7)

𝑁𝑑 − 𝑁𝑎 𝑁𝑑 − 𝑁𝑎 2
𝑛𝑜 = √
+ ( ) + 𝑛𝑖2
2 2

2×1014 −1.2×1014 2×1014 −1.2×1014 2

1.1 × 1014 = + √( ) + 𝑛𝑖2
2 2

(1.1 × 1014 − 4 × 1013 )2 = (4 × 1013 )2 + 𝑛𝑖2

 4.9 × 1027 = 1.6 × 1027 + 𝑛𝑖2
so 𝑛𝑖 = 5.74 × 1013 cm−3
𝑛2 3.3×1027
𝑝𝑜 = 𝑛𝑖 = 1.1×1014 = 3 × 1013 cm−3
𝑜

Q8)
(a) 𝑁𝑎 > 𝑁𝑑 ⇒p-type
Majority carriers are holes
𝑝𝑜 = 𝑁𝑎 − 𝑁𝑑 = 3 × 1016 − 1.5 × 1016 = 1.5 × 1016 cm−3
Minority carriers are electrons
2
𝑛2 (1.5×1010 )
𝑛𝑜 = 𝑝𝑖 = = 1.5 × 104 cm−3
𝑜 1.5×1016

(b) Boron atoms must be added

𝑝𝑜 = 𝑁𝑎′ + 𝑁𝑎 − 𝑁𝑑
5 × 1016 = 𝑁𝑎′ + 3 × 1016 − 1.5 × 1016
So 𝑁𝑎′ = 3.5 × 1016 cm−3
2
(1.5×1010 )
𝑛𝑜 = = 4.5 × 103 cm−3
5×1016

Q9)

𝑁𝑑 𝑁 2
(a) 𝑛𝑜 = + √( 2𝑑 ) + 𝑛𝑖2
2
𝑛𝑜 = 1.05𝑁𝑑 = 1.05 × 1015 cm−3
(1.05 × 1015 − 0.5 × 1015 )2

= (0.5 × 1015 )2 + 𝑛𝑖2

so 𝑛𝑖2 = 5.25 × 1028

Now

𝑇 3 −1.12
𝑛𝑖2 = (2.8 × 1019 )(1.04 × 1019 ) ( ) × 𝑒𝑥𝑝 [(0.0259)(𝑇⁄ ]
300 300)

𝑇 3 −12972.973
5.25 × 1028 = (2.912 × 1038 ) (300) × 𝑒𝑥𝑝 [ ]
𝑇
 By trial and error, 𝑇 = 536.5K
(b) At 𝑇 = 300K,
𝑁
𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 (𝑛 𝑐 )
𝑜

2.8×1019
𝐸𝑐 − 𝐸𝐹 = (0.0259) 𝑙𝑛 ( ) = 0.2652eV
1015

At 𝑇 = 536.5K,
536.5
𝑘𝑇 = (0.0259) ( 300 ) = 0.046318eV

536.5 3/2
𝑁𝑐 = (2.8 × 1019 ) ( 300 ) = 6.696 × 1019 cm−3
𝑁
𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 (𝑛 𝑐 )
𝑜

6.696×1019
𝐸𝑐 − 𝐸𝐹 = (0.046318) 𝑙𝑛 ( 1.05×1015 ) = 0.5124eV

then Δ(𝐸𝑐 − 𝐸𝐹 ) = 0.2472eV

(c) Closer to the intrinsic energy level.

Q10)
*
𝑚𝑝
3 3
(a) 𝐸𝐹𝑖 − 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 = 4 𝑘𝑇 𝑙𝑛 (𝑚* ) = 4 (0.0259) 𝑙𝑛(10)
𝑛

𝐸𝐹𝑖 − 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 = +0.0447eV

(b) Impurity atoms to be added so

𝐸𝑚𝑖𝑑𝑔𝑎𝑝 − 𝐸𝐹 = 0.45eV

(i) p-type, so add acceptor atoms

(ii) 𝐸𝐹𝑖 − 𝐸𝐹 = 0.0447 + 0.45 = 0.4947eV
𝐸𝐹𝑖 −𝐸𝐹 0.4947
𝑝𝑜 = 𝑛𝑖 𝑒𝑥𝑝 ( ) = (105 ) 𝑒𝑥𝑝 (0.0259)
𝑘𝑇

𝑝𝑜 = 𝑁𝑎 = 1.97 × 1013 cm−3

Q11)
(a) Silicon
𝑁
(i)𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 (𝑁𝑐 )
𝑑

2.8×1019
= (0.0259) 𝑙𝑛 ( 6×1015 ) = 0.2188eV

(ii)𝐸𝑐 − 𝐸𝐹 = 0.2188 − 0.0259 = 0.1929eV

 −(𝐸𝑐 −𝐸𝐹 )
𝑁𝑑 = 𝑁𝑐 𝑒𝑥𝑝 [ ]
𝑘𝑇

−0.1929
= (2.8 × 1019 ) 𝑒𝑥𝑝 [ 0.0259 ]

𝑁𝑑 = 1.631 × 1016 cm^-3= 𝑁𝑑′ + 6 × 1015

⇒ 𝑁𝑑′ = 1.031 × 1016 cm−3 Additional
donor atoms
(b) GaAs
4.7×1017
(i)𝐸𝑐 − 𝐸𝐹 = (0.0259) 𝑙𝑛 ( )
1015

= 0.15936eV
(ii)𝐸𝑐 − 𝐸𝐹 = 0.15936 − 0.0259 = 0.13346eV
−0.13346
𝑁𝑑 = (4.7 × 1017 ) 𝑒𝑥𝑝 [ ]
0.0259

= 2.718 × 1015 cm−3 = 𝑁𝑑′ + 1015

⇒ 𝑁𝑑′ = 1.718 × 1015 cm−3 Additional donor atoms

Q12)
𝐸𝐹 −𝐸𝐹𝑖
𝑛𝑜 = 𝑛𝑖 𝑒𝑥𝑝 [ ]
𝑘𝑇

0.55
= (1.8 × 106 ) 𝑒𝑥𝑝 [0.0259]

= 3.0 × 1015 cm−3

Add additional acceptor impurities
𝑛𝑜 = 𝑁𝑑 − 𝑁𝑎
3 × 1015 = 7 × 1015 − 𝑁𝑎
⇒ 𝑁𝑎 = 4 × 1015 cm−3
Q13)

𝑁𝑎 𝑁𝑎 2
𝑝𝑜 = √
+ ( ) + 𝑛𝑖2
2 2

5×1015 5×1015 2
5.08 × 1015 = + √( ) + 𝑛𝑖2
2 2

(5.08 × 1015 − 2.5 × 1015 )2

 = (2.5 × 1015 )2 + 𝑛𝑖2

6.6564 × 1030 = 6.25 × 1030 + 𝑛𝑖2

⇒ 𝑛𝑖2 = 4.064 × 1029

−𝐸𝑔
𝑛𝑖2 = 𝑁𝑐 𝑁𝜐 𝑒𝑥𝑝 [ 𝑘𝑇 ]
350
𝑘𝑇 = (0.0259) (300) = 0.030217eV

350 2
𝑁𝑐 = (1.2 × 1019 ) (300) = 1.633 × 1019 cm−3

350 2
𝑁𝜐 = (1.8 × 1019 ) (300) = 2.45 × 1019 cm−3

Now
−𝐸𝑔
4.064 × 1029 = (1.633 × 1019 )(2.45 × 1019 ) × 𝑒𝑥𝑝 [0.030217]

(1.633×1019 )(2.45×1019 )
𝐸𝑔 = (0.030217) 𝑙𝑛 [ ]
4.064×1029

⇒ 𝐸𝑔 = 0.6257eV

Q14)
(a) Replace Ga atoms ⇒Silicon acts as a donor

𝑁𝑑 = (0.05)(7 × 1015 ) = 3.5 × 1014 cm−3

Replace As atoms ⇒Silicon acts as an acceptor
𝑁𝑎 = (0.95)(7 × 1015 ) = 6.65 × 1015 cm−3
(b) 𝑁𝑎 > 𝑁𝑑 ⇒p-type
(c) 𝑝𝑜 = 𝑁𝑎 − 𝑁𝑑 = 6.65 × 1015 − 3.5 × 1014
= 6.3 × 1015 cm−3
2
𝑛2 (1.8×106 )
𝑛𝑜 = 𝑝𝑖 = = 5.14 × 10−4cm−3
𝑜 6.3×1015

(d)
𝑝𝑜
𝐸𝐹𝑖 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 ( )
𝑛𝑖
6.3×1015
= (0.0259) 𝑙𝑛 ( 1.8×106 ) = 0.5692eV