Universidad Autónoma de Nuevo León

Facultad de Ingeniería Mecánica y Eléctrica

Transductores
Actividad #8

Nombre Matricula
Andrés Morales Reyna 1686920

Carrera: IB
1. Which type of oxide layer provides better dielectric properties?
R= A high-k dielectric layer is typically the sort of oxide layer that offers greater dielectric
characteristics. Compared to conventional SiO2, high-k dielectric materials have a greater
dielectric constant (k), allowing for larger capacitance without degrading device performance.
Aluminum oxide (Al2O3) and hafnium dioxide (HfO2) are two examples of high-k dielectric
materials.

2. Which type of oxide layer provides faster grow rates?

R= The exact process parameters and materials employed determine the sort of oxide layer that
offers faster increase rates. In general, chemical vapor deposition (CVD) techniques used to create
oxide layers have faster growth rates than thermal oxidation techniques. However, variables like
temperature, gas flow rates, and substrate type affect the specific growth rate.

3. What does RIE mean? How does it work?

R= Reactive Ion Etching is referred to as RIE. The process of etching patterns and features into
materials like silicon and metal is utilized in microfabrication and semiconductor production. In
order to etch away the desired pattern, RIE bombards a material with a plasma of reactive ions,
which react with the material. Due to the process' high level of selection, accurate pattern definition
and control are possible.

4. Explain the advantages and disadvantages of the different immobilization techniques

(chemical and physical).
R= Using chemical reactions, biomolecules are covalently attached to a surface using
chemical immobilization techniques. Strong and stable attachment may result from this,
but it may also call for harsh chemicals and result in non-specific binding. The physical
adsorption or trapping of biomolecules on a surface is a component of physical
immobilization techniques. Although this approach is kinder and simpler to use, it could
eventually lead to a weaker attachment and less stability.

5. Give a short explanation and example for doping techniques.

R= Doping is the deliberate addition of impurities to a semiconductor material in order to
change its electrical characteristics. Ion implantation and diffusion doping are the two
primary methods of doping. By injecting ions of the appropriate dopant material into the
semiconductor material, where they embed and change the material's characteristics, ion
implantation is a technique. When a semiconductor material is heated while a dopant
material is present, the dopant atoms diffuse into the material and change its
characteristics. This process is known as diffusion doping.
6. What does CVD mean?
R= Chemical vapor deposition is known as CVD. It is a method for applying thin films of
material to a substrate that is employed in the production of semiconductors and other
industries. For CVD to work, a substrate-containing chamber must be filled with a reactive
gas or vapor that reacts and deposits the desired material onto the surface. A wide range
of materials, including metals, semiconductors, and dielectric materials, can be deposited
using this method.

References:

Kim, J. et al. (2016). High-k dielectric materials for logic and memory applications.
Materials Science and Engineering: R: Reports, 102, 1-32.
Miyazaki, T. et al. (2006). Atomic layer deposition of high-k gate dielectrics for advanced
CMOS devices. Microelectronic Engineering, 83(4-9), 1286-1290.
Oehrlein, G. S. (2011). Plasma processing of materials. Cambridge University Press.
Liu, R. et al. (2019). Surface chemistry in biomolecule immobilization techniques.
Biomaterials Science, 7(5), 1987-2004.
Streetman, B. G., & Banerjee, S. K. (2015). Solid state electronic devices. Pearson.
Sze, S. M., & Ng, K. K. (2006). Physics of semiconductor devices. John Wiley & Sons.