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TPDV 1225
TPDV 1225
ALTERNISTORS
FEATURES High commutation: > 88A/ms (400Hz) Insulating voltage = 2500V(RMS) (UL Recognized: EB81734) High voltage capability: VDRM = 1200V
s s s
A2
G A1
DESCRIPTION The TPDV625 ---> TPDV1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)
A1 A2 G TOP3
TPDV Symbol VDRM VRRM Parameter 625 Repetitive peak off-state voltage Tj = 125C 600 825 800 1025 1000 1225 1200 V Unit
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GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20s) IGM = 8A (tp = 20s)
ELECTRICAL CHARACTERISTICS
Symbol IGT V GT V GD tgt IL Test conditions VD = 12V (DC) RL = 33 VD = 12V (DC) RL = 33 VD = VDRM RL = 3.3k Tj = 25C Tj = 25C Tj =125C Tj = 25C Tj = 25C Quadrant I - II - III I - II - III I - II - III I - II - III I - III II IH* VTM* IDRM IRRM dV/dt * (dI/dt)c* IT = 500mA Gate open ITM = 35A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open (dV/dt)c = 200V/s (dV/dt)c = 10V/s tp = 380s Tj = 25C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C TYP. MAX. MAX. MAX. MIN. MIN. MAX. MAX. MIN. TYP. TYP. Value 150 1.5 0.2 2.5 100 200 50 1.8 0.02 8 500 20 88 V/s A/ms mA V mA Unit mA V V s mA
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Zth (j-c)
0.10
Zt h( j-a)
0.01
tp( s)
1E-3
1E-2
1E-1
1 E+0
1E +1
1 E+2
1E +3
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
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4/5
4.60 Typ.
0.181 Typ.
OTHER INFORMATION
Ordering type TPDVx25
s s s s
Marking TPDVx25
Package TOP3
Weight 4.5 g
Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.