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1E.CEE 222 HW2-Solutions-Diode (Hepsi Anlatilmayacak)
1E.CEE 222 HW2-Solutions-Diode (Hepsi Anlatilmayacak)
1E.CEE 222 HW2-Solutions-Diode (Hepsi Anlatilmayacak)
1018 n i2 10 20 10 2
p po N A | n po
cm 3 p po 1018 cm 3
1015 n i2 10 20 10 5
n no N D | p no
cm 3 n no 1015 cm 3
j VT ln
NA ND
0.025V ln
1018 cm 3 1015 cm 3
0.748 V
n i2 10 20 cm 6
2s 1 1 211.7 8.854 x1014 F cm 1 1 1
w do j 19 18 3 15 3 0.748V
q N A N D 1.602x10 C 10 cm 10 cm
w do 98.4 x 106 cm 0.984 m
2.
j p E | E
jn
jn 5000A cm 2 2.5 cm12.5
kV
cm
3.
j VT ln
N AND
0.025V ln
1018 cm 3 1020 cm 3
1.04 V
ni2 1020 cm 6
wdo
2s 1
1
j
2 11.7 8.854x1014 F cm 1 1
18 3 20 3 1.04V
1
19
q N A N D 1.602x10 C 10 cm 10 cm
VR
wdo 0.0368 m | wd wdo 1
j
5 25
wd 0.0368m 1 = 0.0887 m | wd 0.0368m 1 = 0.184 m
1.04 1.04
4.
(a)
5 5
(a) Diode is forward biased :V = 5 + 0 = 5 V | I = 0.625 mA
16k
3 7
(b) Diode is forward biased :V = 3 0 = 3 V | I = 0.625 mA
16k
(c) Diode is reverse biased : I = 0 | V = 7 16kI 7 V | VD 10
(d ) Diode is reverse biased : I = 0 | V = 5 16kI 5 V | VD 10 V
(b)
5 4.3
(a) Diode is forward biased :V = 5 + 0.7 = 4.3 V | I = 0.581 mA
16k
2.3 7
(b) Diode is forward biased :V = 3 0.7 = 2.3 V | I = 0.581 mA
16k
(c) Diode is reverse biased : I = 0 | V = 7 16kI 7 V | VD 10 V
(d ) Diode is reverse biased : I = 0 | V = 5 16kI 5 V | VD 10 V
5.
I D1
10 0V 0.495mA | VD2 5 10 8200I D1 0.941V
8.2k 12k
0 5V
I D3 I D1 0.005mA
10k
D1 : 0.495 mA, 0 V D2 : 0 A, 0.941 V D3 : 0.005 mA, 0 V
10 0
(b) D1 on, D2 off, D3 on : I D2 0 | I D1 0.990mA
3.3k 6.8k
0 5
I D3 0.990mA I D3 1.09mA | VD2 5 10 3300I D1 1.73V
2.4k
D1 : 0.990 mA, 0 V D2 : 0 mA, 1.73 V D3 : 1.09 mA, 0 V
6.
100 20 15 V
(a) VTH 50V 20.0V | RTH 150 100 60 | I Z 83.3 mA
150 100 60
50 15
P = 15I Z = 1.25 W | (b) I Z 233 mA | P = 15I Z = 3.50 W
150
7.
8.