Laboratory Experiment: MOSFET Characteristics

1. Introduction to MOSFETs
Objective:
 Understand the fundamental principles of Metal-Oxide-Semiconductor Field-
Effect Transistors (MOSFETs).
 Learn about the applications and advantages of MOSFETs in electronic circuits.
Theory:
 Brief explanation of MOSFET structure and operation.
 Overview of N-channel and P-channel MOSFETs.
 Applications in amplifiers, switches, and integrated circuits.

2. MOSFET Symbols and Types

Objective:
 Identify MOSFET symbols and understand their representation.
 Differentiate between N-channel and P-channel MOSFETs.
Theory:
 Explanation of MOSFET symbols and their significance.
 Characteristics of N-channel and P-channel MOSFETs.
 Real-world examples of MOSFET symbols in circuit diagrams.

3. Biasing Configurations
Objective:
 Explore different biasing configurations for MOSFETs.
 Understand the impact of biasing on MOSFET operation.
Theory:
 Overview of common biasing configurations:
o Enhancement mode biasing
o Depletion mode biasing
 Explanation of biasing considerations for optimal MOSFET performance.

4. Simulation of MOSFET Characteristics using Multisim/Proteus/LTspice

Objective:
 Simulate MOSFET characteristics to observe and analyze key parameters.
 Gain practical experience in using simulation tools.
Procedure:
1. Launch Simulation Software:
 Open Multisim, Proteus, or LTspice on your computer
2. Select MOSFET Component:
 Choose the appropriate MOSFET component from the simulation tool library.
3. Circuit Setup:
 Build a simple MOSFET circuit, including necessary biasing components.
 Connect the MOSFET to a voltage source and a load.
4. Parameter Configuration:
 Set the MOSFET parameters such as Vgs, Vds, and Id according to the specifications.
5. Run Simulation:
 Execute the simulation and observe the MOSFET characteristics on the oscilloscope or
simulation results window.
6. Analysis:
 Analyze the MOSFET characteristics, including:
o Threshold voltage (Vth)
o Drain current vs. Drain-source voltage (Id-Vds) characteristics.
o Transfer characteristics (Id-Vgs)
7. Experiment Variations:
 Modify circuit parameters (Vgs, Vds) to observe their impact on MOSFET behavior.
 Compare N-channel and P-channel MOSFET simulations.
8. Documentation:
 Record simulation results, observations, and analysis in your lab notebook.

Discussion Questions:
What is the significance of the threshold voltage (Vth) in MOSFET operation?
How does changing the biasing affect the MOSFET characteristics?
Compare the simulation results of N-channel and P-channel MOSFETs. What differences do you
observe?
Conclusion:
Summarize the key findings from the simulation, emphasizing the importance of MOSFET
characteristics in electronic circuit design.

Note for Instructors: Provide guidance on troubleshooting common simulation issues and
encourage students to explore additional MOSFET configurations beyond the basic setup. Emphasize
the practical applications of MOSFETs in modern electronics.