Ref. No.

: Ex/ES/BE/T102A/2021

B.E. FIRST YEAR FIRST SEMESTER EXAM, 2021

BASIC ELECTRONICS Full Marks: 100

Group I- (30)

1. Define conduction band and valence band of a semiconductor. [2]

2. Write down the Fermi-Dirac probability function explaining all symbols used. [2]

3. Calculate the bandgap of an intrinsic LED which emits light of wavelength 760 nm. [2]

4. Draw and label the energy band diagram of a p-n junction diode under- equilibrium. [3]

5. Explain Zener breakdown in the pn junction diode. [3]

6. Write down four differences between BJT and FET. [2]

7. Draw input characteristics of npn BJT in CE mode. [2]

8. Draw a positive clipper circuit using a diode. Sketch the output waveform for a [3]
square wave input.
9. Draw non-inverting amplifier using OP-AMP. Write the expression of the output [2]
voltage.

10. Mention applications of an OP-AMP without any feedback (open loop). [1]

11. Convert (1587)10 to binary and Hexadecimal. [2]

12. Draw the truth table of a XNOR gate. [2]

13. Write difference between combinational and sequential logic circuit. [2]

14. Design a D flip-flop using SR flip flop. [2]

NAME OF THE PAPER-SETTER (IN BLOCK LETTERS)

(CHANDRIMA MONDAL)

Signature of the Paper- Setters in full

Date: 22/04/2021
Page- 1/3
 Ref. No.: Ex/ES/BE/T102A/2021

B.E. FIRST YEAR FIRST SEMESTER EXAM, 2021

BASIC ELECTRONICS Full Marks: 100

Group II (70)

Module-I (10)

1. a) Define intrinsic and extrinsic semiconductors. [2]

b) Explain the conduction mechanisms in a semiconductor. [4]
c) Write Einstein's relation for the drift and diffusion of carriers in semiconductor. [2]
d) Find the conductivity of Silicon with donor impurity of 1015/cc. Given, that ni for Si [2]
at 300 K is 1.5×1010 cm-3, µe = 1300 cm2/V.s, , µh = 500 cm2/V.s

Module-II (25)

2. a) Draw and explain the current-voltage characteristics of a pn junction diode. [6]

[2]
b) Write down the current-voltage equation of p-n junction diode explaining all the
symbols used. [2]
c) Consider a uniformly doped silicon pn junction with doping concentration
NA=3×1015 cm-3 and ND=1016cm-3. Calculate Vbi (built in potential) at T = 300K.
ni=1.5×1010cm-3. Thermal voltage is 26 mV.
3. a) Explain the base width modulation in Bipolar Junction Transistor. [2]
[4]
b) Draw and explain the output characteristics of n -channel enhancement type MOSFET
showing all regions of operation. [4]
c) Explain the pinch-off phenomenon in JFET with a neat diagram.
4. a) Write ideal characteristics of OP-AMP [2]
[3]
b) Define CMRR and explain its importance.

Module-III (20+03=23)
NAME OF THE PAPER-SETTER (IN BLOCK LETTERS)
(CHANDRIMA MONDAL)

Signature of the Paper- Setters in full

Date: 22/04/2021
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 Ref. No.: Ex/ES/BE/T102A/2021

5. a) Draw and explain the operation of a half-wave rectifier circuit. Considering the ideal [3+4]
diode model obtain the expression for ripple factor. [2]
b) Write the importance of biasing of a transistor.
[2]
c) Calculate stability factor with respect to reverse saturation current for the collector to
base feedback circuit.
d) Physically explain why a collector to base feedback circuit offers better thermal [2]
stability with respect to fixed bias circuit.
[3]
e) For the figure 1 find VCE and IC. =50.
f) With the help of circuit explain the operation of differential amplifier using OP-AMP. [4]

Figure 1
6. a) What is the importance of measuring r.m.s value of a signal? [2]
b) How do you measure the r.m.s value of output voltage of a Full-wave rectifier using [1]
digital multi-meter.

Module-IV (12)
7. a) Add binary equivalent of decimal number -46 and +28 using 2’s complement method. [2]
b) Construct basic logic gates using any one of the universal gates. [2]
c) Draw the logic circuit of the following equation using only NAND gates [2]

d) Draw an 8:1 Multiplexer using basic gates. [2]

e) Draw the truth table of J-K FF and briefly explain the advantages over SR FF. [2]
f) Explain the race-around condition in J-K FF. [2]

NAME OF THE PAPER-SETTER (IN BLOCK LETTERS)

(CHANDRIMA MONDAL)

Signature of the Paper- Setters in full

Date: 22/04/2021
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