1.

The resistivity of a semiconductor

(a) increases as the temperature increases (b) decreases as the temperature
increases (c) remains constant even when temperature varies (d) none of
the above
2. A diode is a ____________ terminal device.
(a) four (b) two (c) one (d) three
3. A bridge Rectifier consists of ____________ Diodes.
(a) 4 (b) 5 (c) 7 (d) 5
4. A half wave rectifier operates in ____________ .
(a) Positive half Cycle (b) Negative half Cycle (c) both (d) None of the
above
5. The ratio of DC output power to AC input power is known as ____________

(a) Rectifier efficiency (b) Form Factor (c) Peak Factor (d) Ripple
factor
6. A bipolar junction Transistor is a ____________ terminal semiconductor device.

(a) Three (b) Six (c) Four (d) Two

7. There are ____________ types of Transistor Configuration.
(a) Eight (b) Six (c) Four (d) Three

8. In BJT, base junction is

(a) highly doped (b) Moderately doped (c) lightly doped (d) Not Doped
9. A PNP transistor is made up of [ ]
(a) Silicon (b) Germanium (c) either Silicon or Germanium (d) None
10. The common emitter transistor circuit has
(a) High Gain (b) Low gain (c) Negligible gain (d) Zero Gain

11. The element having four Valence electron is

(a) Silicon (b)Germanium (c)both (d)None of the above
 12. Valence Electrons are
(a) loosely packed Electrons (b) mobile Electrons
(c)electron present in outermost orbit (d) None of the above
13. In the forward biased PN Junction Diode, the
(a)postive terminal of the battery is connected to the P side and negative side is connected
to N.
(b)postive terminal of the battery is connected to the N side and negative side is
connected to P.
(c)N side is connected directly to the P side.
(d)junction is earthed

14.when the holes leaves the p type material to fill electrons in the n material , the
process is called
(a)mixing (b)depletion (c)diffission (d)none of the above.

15.When Diode is forward biased, the

(a)barrier potential increases (b) barrier potential decreases (c)majority current decreases
(d) minority current decreases.

16. A rectifier is used to

(a) convert AC voltage to DC voltage
(b) convert DC voltage to AC voltage
(c) both
(d) Convert voltage to current.
17.The ripple factor for half wave rectifier is
(a)1.21 (b)0.482 (c)0.406 (d) 0.121

18. The Peak inverse Voltage of half wave rectifier is

(a)Vm (b)2Vm (c)vm /2 (d)3 Vm

19. In a full wave rectifier , the diode conducts for

(a)one half cycle (b) Full cycle (c)alternate half cycle (d)none of these.

20. In a transistor, the region that is lightly doped and very thin is the
(a)emitter (b)base (c)collector (d) none of the above

22. The N type semiconductor has _______________ electrons.

(a) free (b) immobile (c)Mobile (d)none of the above.

23. The Transformer Utilization Factor for the full wave rectifier is
(a)1.11 (b)0.693 (c) 0.812 (d) 1.21

25. In an NPN transistor ,when the emitter junction is forward biased and the collector junction is
reverse biased , the transistor will operate in
(a) Active region (b)Saturation Region (c)cut off region (d) inverted region

26. Symbol for a PN junction diode is given as ____________________.

27. The PIV of the Bridge rectifier is ____________________.

28. Transition capacitance can be expressed as ____________________.

29. A PN diode can be used for ____________________.

30. _________________ is an electronic device used to convert AC into DC.

31. The maximum reverse voltage that a diode can withstand without destroying the junction

is known as ____________________.

32. The maximum efficiency for a bridge rectifier is ____________________.

33. BJT can be used for __________________.

34. The three portion of transistor are Emitter, Base & ____________________.

35. The ripple factor of a half wave rectifier is __________________.

36. Symbol for a Bipolar junction Transistor is given as ____________________.

37. The efficiency of the Full wave rectifier is ____________________.

38. Diffusion capacitance can be expressed as ____________________.

39. A Bipolar junction Transistor can be used for ____________________.

40. _________________ is an electronic device used to convert AC into DC.

41. The maximum reverse voltage that a diode can withstand without destroying the junction

is known as ____________________.

42. The maximum efficiency for a bridge rectifier is ____________________.

43. The efficeincy of a half wave rectifier is __________________.

44. The peak factor of half wave rectifier is __________________.

45. A PN junction diode can operate in only _______________ region.

46. Emitter region is ___________ doped.

47. The largest current flow of a bipolar transistor occurs

(a)In emitter (b)in Base (c)in collector (d)through emitter collector

48. In a bridge rectifier, __________ diodes are used.

49. Doping with ______________ impurity, makes P- type Semiconductor.

50. Extremely pure type of semiconductor is known as __________ semiconductor.

51. The process of adding impurity to a semiconductor is known as __________ .

52. The opposition to the flow of current is known as __________ .

53. Two types of resistances are ________ and ________ resistance.