LAPT

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)

2SC3519/3519A
Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC3519 2SC3519A 2SC3519 2SC3519A
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 160 180 V 100max 9.6 2.0±0.1
ICBO
VCEO 160 180 V VCB= 160 180 V
VEBO 5 V IEBO 100max µA

19.9±0.3
VEB=5V

4.0
a ø3.2±0.1
IC 15 A V(BR)CEO IC=25mA 160min 180min V
b
IB 4 A hFE VCE=4V, IC=5A 50min∗
PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 50typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 250typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
0.2typ b. Lot No.
40 4 10 10 –5 1 –1 1.3typ 0.45typ

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A mA
A

m A
500 m
0m

6 00 400
70

mA
300

A
200m

Collector Current I C (A)

Collector Current I C (A)

10 2 10

10 0m A

p)

)
I C =10A

em

mp
5 1 5

eT

Te
50mA

as

se
(C

(Ca
C
5˚
I B =20mA 5A

˚C
12

˚C

–30
0 0 0 25
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 300 3
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

125˚C
100 100 1
Typ 25˚C
–30˚C 0.5
50 50

10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 40 130

10
ms
M aximum Power Dissipa ti on P C (W)

10
100
Cut-o ff F requ ency f T (MH Z )

60 DC
W

Typ 5
ith
Co lle ctor Cu rr ent I C (A)

In
fin
ite
he

40
at

1
si
nk

Without Heatsink
0.5 Natural Cooling 50

1.2SC3519
20 2.2SC3519A
0.1

1 2 Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –5 –10 5 10 50 100 200 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

67