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    FZT957

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    Nerta Natura
    1) This document describes high performance SOT223 PNP silicon planar transistors that can handle continuous currents of 1 Amp and peak currents of 2 Amps, with very low saturation voltage and excellent gain characteristics up to 1 Amp. 2) The transistors have an absolute maximum collector-emitter voltage rating of -300 to -400 Volts, collector cutoff currents below -50nA, and transition frequencies above 85MHz. 3) Electrical characteristics are provided, including typical saturation voltages between -60 to -240mV for currents from 100mA to 1A, and switching times of 108ns and 2500ns for specified current conditions.

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    FZT957

    Uploaded by

    Nerta Natura
    6 views3 pages
    1) This document describes high performance SOT223 PNP silicon planar transistors that can handle continuous currents of 1 Amp and peak currents of 2 Amps, with very low saturation voltage and excellent gain characteristics up to 1 Amp. 2) The transistors have an absolute maximum collector-emitter voltage rating of -300 to -400 Volts, collector cutoff currents below -50nA, and transition frequencies above 85MHz. 3) Electrical characteristics are provided, including typical saturation voltages between -60 to -240mV for currents from 100mA to 1A, and switching times of 108ns and 2500ns for specified current conditions.

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    1) This document describes high performance SOT223 PNP silicon planar transistors that can handle continuous currents of 1 Amp and peak currents of 2 Amps, with very low saturation voltage and excellent gain characteristics up to 1 Amp. 2) The transistors have an absolute maximum collector-emitter voltage rating of -300 to -400 Volts, collector cutoff currents below -50nA, and transition frequencies above 85MHz. 3) Electrical characteristics are provided, including typical saturation voltages between -60 to -240mV for currents from 100mA to 1A, and switching times of 108ns and 2500ns for specified current conditions.

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    © All Rights Reserved
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    6 views3 pages

    FZT957

    Uploaded by

    Nerta Natura
    1) This document describes high performance SOT223 PNP silicon planar transistors that can handle continuous currents of 1 Amp and peak currents of 2 Amps, with very low saturation voltage and excellent gain characteristics up to 1 Amp. 2) The transistors have an absolute maximum collector-emitter voltage rating of -300 to -400 Volts, collector cutoff currents below -50nA, and transition frequencies above 85MHz. 3) Electrical characteristics are provided, including typical saturation voltages between -60 to -240mV for currents from 100mA to 1A, and switching times of 108ns and 2500ns for specified current conditions.

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    of 3

    SOT223 PNP SILICON PLANAR HIGH CURRENT I

    FZT957
    (HIGH PERFORMANCE) TRANSISTORS
    ISSUE 3- JANUARY 1996
    I
    I
    FZT958
    FEATURES r
    * 1 Amp continuous current
    * Up to 2 Amps peak current c
    * Very low saturation voltage
    * Excelient gain characteristics specified up to 1 Amp
    E
    COMPLEMENTARY TYPES FZT957 FZT857 @ c
    FZT958 N/A
    B
    PARTMARKING DETAILS - DEVICE TYPE IN FULL

    ABSOLUTE MAXIMUM RATINGS.


    PARAMETER

    Collector-Base Voltage
    1
    —5%Fz=l-=-
    UNIT

    v
    Collector-Emitter Voltage VCEO I -300 I -400 v
    —— — -—
    Emitter-Ease Voltage v Eeo I -6 v
    Peak Pulse Curren[ A

    Continuous Collector Current A

    Power Dissipation at T,~b=25°C Ptot


    I 3 w
    Operating
    Range

    *The power which


    and Storage Temperature

    can be dissipated
    —
    Tj:T,,g

    ,assumjng the device


    I -55 to +150

    is mounted in a typical manner


    ‘c

    on a
    P,C.B. with copper equal to 4 square Inch mmlmum

    3-289
    Eiiiil
    ELECTRICAL CHARACTERISTICS (at T.~h
    ----- = 25°C unless othewvise stated)

    PARAMETER SYMBOL MIN. lWP, MAX. UNIT CONDITIONS.

    Collector-Base ‘( BR)CBO -330 -440 v l&-l OOLA


    Breakdown Voltage

    Collector-Emitter ‘lBR)CEf3 -330 -440 v IC=-IWA, RB <lkfJ


    Breakdown Voltage

    Collector-Emitter ‘( BR)CEO -300 -400 v le-l OmA*


    Breakdown Voltage

    Emitter-Base ‘{ BR)EBO -6 -8 v IE=-l OOWA


    Breakdown Voltage

    Collector Cut-Off Current ICBO -50 nA vc~-300v


    -1 @ VCF-300V, Tam&l 00”C

    Collector Cut-Off Current lCER -50 nA vc&-300v


    R <Ikfl -1 @ VCF-300V, T,m~l OO”C

    Emitter Cut-Off Current IEBO -lo nA VEr-6V

    Collector-Emitter vcE(.at, -60 -1oo mV le-l OOmA, le=-l OmA*


    Saturation Voltage -110 -165 mV lF-500mA, IB=-l 00mA*
    -170 -240 mV 1~-lA, l@-300mA*

    Base-Emitter ‘BE(sat) -910 -1150 mV IF-lA, la=-300mA’


    Saturation Voltage

    Base-Emitter ‘BE(on) -750 -1020 mV IC=-lA, VCF-IOV’


    Turn-On Voltage

    Static Forward ‘FE 100 200 1~-10mA, VC=-IOV*


    Current Transfer Ratio 100 200 300 le-0.5A, V,-.F-l OV*
    90 170 le-lA, Vc~-l OV*
    10 IF-2A, Vce-l OV’

    Transition Frequency fT 85 MHz lF-lOOmA, VCF- 10V


    f=50MHz

    Output Capacitance cob. 23 pF VCF-20V, f=l MHz

    Switching Times t 108 ns le-500mA, lB1=-50mA


    t; 2500 ns lB750mA, VCF-lOOV

    *Measured under pulsed conditions. Pulse width=300~s. Duty cycle <2%


    Spice parameter data is available upon request for this device

    3-290
    FZT957

    TYPICAL CHARACTERISTICS

    ....—_ .— .55C .. ..- . . ,.,, -.. I


    , J.!::A
    ‘>-+---- +175’C, +----w

    ‘o
    >01 01 1 10 2(
    o 001 01 1 10 :

    Ic - Collector Current (Amps) b Collector Current (Amps)

    VCE(aat]V IC VCE(sat)v IC
    —.

    ————
    l.. /..-
    .:?
    .KO’c,
    LE=Eit*:

    “ o m. 001 01 1 102
    Ic - Collector Current (Amps) Ic - Collector Current (Arnpsl

    hFEvlC VBE(sat)v IC

    02

    ‘) O(mt ,) ,& 01 1020 lC 100 100

    Ic - C.dlector Current (Amps) VCE Collector Voltage (V)

    VBE(on) v IC Safe Operating Area


    —.——

    3-291

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