SM-8 DUAL PNP MEDIUM POWER

TRANSISTORS ZDT749
ISSUE 1 - NOVEMBER 1995

C1 B1
C1 E1
C2 B2
C2 E2
SM-8
PARTMARKING DETAIL – T749
(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at Tamb = 25°C* Ptot
Any single die “on” 2.25 W
Both die “on” equally 2.75 W
Derate above 25°C*
Any single die “on” 18 mW/ °C
Both die “on” equally 22 mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on” 55.6 °C/ W
Both die “on” equally 45.5 °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

3 - 351
 ZDT749 ZDT749
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). td

tr

1.8 tf
IB1=IB2=IC/10
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
ns

1.6 160
VCE=-10V

ts
1.4 140

Collector-Base V(BR)CBO -35 V IC=-100µ A, IE=0

ns

Switching time
1.2 1200 120

Breakdown Voltage
ts

- (Volts)
1.0 1000 100

tf
0.8 80

Collector-Emitter V(BR)CEO -25 V IC=-10mA, IB=0*

Breakdown Voltage 0.6 600 60

I /I =100
C B

0.4 40
td
tr

V
Emitter-Base V(BR)EBO -5 V IE=-100µ A, IC=0 0.2
IC/IB=10
200 20

Breakdown Voltage 0
0.001 0.01 0.1 1 10
0
0.01 0.1 1

Collector Cutoff ICBO -0.1 µA VCB=-30V IC - Collector Current (Amps) IC - Collector Current (Amps)
Current -10 µA VCB=-30V,T amb =100°C
VCE(sat) v IC Switching Speeds
Emitter Cutoff Current IEBO -0.1 µA VEB=-4V, IE=0

Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*

Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA* 1.2

Base-Emitter VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* 200 1.0

Saturation Voltage VCE=2V

- (Volts)
160 IC/IB=10

- Gain
0.8

Base-Emitter VBE(on) -0.8 -1 V IC=-1A, VCE=-2V*

Turn-On Voltage 120
0.6

h
IC/IB=100

Static Forward Current hFE 70 200 IC=-50mA, VCE=-2V* 80

V
0.4
Transfer Ratio 100 200 300 IC=-1A, VCE=-2V*
75 150 IC=-2A, VCE=-2V* 40
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
15 50 IC=-6A, VCE=-2V*
IC - Collector Current (Amps) IC - Collector Current (Amps)
Transition Frequency fT 100 160 MHz IC=-100mA, VCE=-5V
hFE v IC VBE(sat) v IC
f=100MHz

Output Capacitance Cobo 55 100 pF VCB=-10V f=1MHz

1.2

Switching Times ton 40 ns IC=-500mA, VCC=-10V

IB1=IB2=-50mA 1.0

toff 450 ns VCE=2V

- (Volts) 0.8

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

0.6
V

0.4

0.001 0.01 0.1 1 10

IC - Collector Current (Amps)

VBE(on) v IC

3 - 352 3 - 353
 ZDT749 ZDT749
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). td

tr

1.8 tf
IB1=IB2=IC/10
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
ns

1.6 160
VCE=-10V

ts
1.4 140

Collector-Base V(BR)CBO -35 V IC=-100µ A, IE=0

ns

Switching time
1.2 1200 120

Breakdown Voltage
ts

- (Volts)
1.0 1000 100

tf
0.8 80

Collector-Emitter V(BR)CEO -25 V IC=-10mA, IB=0*

Breakdown Voltage 0.6 600 60

I /I =100
C B

0.4 40
td
tr

V
Emitter-Base V(BR)EBO -5 V IE=-100µ A, IC=0 0.2
IC/IB=10
200 20

Breakdown Voltage 0
0.001 0.01 0.1 1 10
0
0.01 0.1 1

Collector Cutoff ICBO -0.1 µA VCB=-30V IC - Collector Current (Amps) IC - Collector Current (Amps)
Current -10 µA VCB=-30V,T amb =100°C
VCE(sat) v IC Switching Speeds
Emitter Cutoff Current IEBO -0.1 µA VEB=-4V, IE=0

Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*

Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA* 1.2

Base-Emitter VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* 200 1.0

Saturation Voltage VCE=2V

- (Volts)
160 IC/IB=10

- Gain
0.8

Base-Emitter VBE(on) -0.8 -1 V IC=-1A, VCE=-2V*

Turn-On Voltage 120
0.6

h
IC/IB=100

Static Forward Current hFE 70 200 IC=-50mA, VCE=-2V* 80

V
0.4
Transfer Ratio 100 200 300 IC=-1A, VCE=-2V*
75 150 IC=-2A, VCE=-2V* 40
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
15 50 IC=-6A, VCE=-2V*
IC - Collector Current (Amps) IC - Collector Current (Amps)
Transition Frequency fT 100 160 MHz IC=-100mA, VCE=-5V
hFE v IC VBE(sat) v IC
f=100MHz

Output Capacitance Cobo 55 100 pF VCB=-10V f=1MHz

1.2

Switching Times ton 40 ns IC=-500mA, VCC=-10V

IB1=IB2=-50mA 1.0

toff 450 ns VCE=2V

- (Volts) 0.8

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

0.6
V

0.4

0.001 0.01 0.1 1 10

IC - Collector Current (Amps)

VBE(on) v IC

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