PMEG45U10EPDAZ

PMEG45U10EPD
45 V, 10 A extremely low VF MEGA Schottky barrier rectifier

16 December 2014 Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits

• Average forward current: IF(AV) ≤ 10 A
• Reverse voltage: VR ≤ 45 V
• Extremely low forward voltage
• High power capability due to clip-bonding technology and heat sink
• Small and thin SMD power plastic package, typical height 0.78 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Freewheeling application
• Reverse polarity protection
• Low power consumption application
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward δ = 0.5; f = 20 kHz; Tsp ≤ 130 °C; - - 10 A
current square wave
VR reverse voltage Tj = 25 °C - - 45 V
VF forward voltage IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; - 430 490 mV

Tj = 25 °C; pulsed
IR reverse current VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; - 20 50 µA

Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3; - 230 600 µA

Tj = 25 °C; pulsed
Nexperia PMEG45U10EPD
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A anode A
1 K A
2 A anode 3 aaa-009063
3 K cathode 2
CFP15 (SOT1289)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMEG45U10EPD CFP15 plastic, thermal enhanced ultra thin SMD package; 3 leads; SOT1289
body: 5.8 x 4.3 x 0.78 mm
7. Marking
Table 4. Marking codes
Type number Marking code
PMEG45U10EPD 4510 UUUU
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VR reverse voltage Tj = 25 °C - 45 V
IF forward current Tsp = 125 °C; δ = 1 - 14 A
IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 130 °C; - 10 A

square wave
IFSM non-repetitive peak forward tp = 8 ms; Tj(init) = 25 °C; square wave - 180 A
current
Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.4 W
[2] - 1.8 W
[3] - 3.1 W
Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
PMEG45U10EPD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 16 December 2014 2 / 13

Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance in free air [1][2] - - 90 K/W
from junction to [1][3] - - 70 K/W
ambient
[1][4] - - 40 K/W
Rth(j-sp) thermal resistance [5] - - 3 K/W
from junction to solder
point
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of cathode tab.
aaa-014542
102
duty cycle = 1
0.75
Zth(j-a) 0.5
(K/W) 0.33
0.25
0.2
10
0.1
0.05
0.02
1 0.01
10-1
10-3 10-2 10-1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-014543
102
duty cycle = 1
0.75
Zth(j-a)
(K/W) 0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
1
0.01
10-1
10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for cathode 1 cm
aaa-014544
102
duty cycle = 1
Zth(j-a)
(K/W) 0.75
0.5
0.33
10 0.25
0.2
0.1
0.05
1 0.02
0.01
10-1
10-3 10-2 10-1 1 10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint


10. Characteristics
Table 7. Characteristics
V(BR)R reverse breakdown IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms; 45 - - V
voltage δ ≤ 0.12; pulsed
VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; - 314 360 mV
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; - 338 - mV

Tj = 25 °C; pulsed
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02; - 355 - mV

Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02; - 380 430 mV

Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; - 430 490 mV

Tj = 25 °C; pulsed
IR reverse current VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C; - 15 - µA

pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; - 20 50 µA
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; - 65 - µA
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3; - 230 600 µA

Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; - 20 - mA
Tj = 125 °C; pulsed
Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 1170 - pF
VR = 10 V; f = 1 MHz; Tj = 25 °C - 390 - pF
trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 34 - ns

step recovery Tj = 25 °C
trr reverse recovery time dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A; - 16 - ns

ramp recovery VR = 26 V
VFRM peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 300 - mV

voltage

aaa-009173 aaa-009174
102 1
IF IR(A)
(1)
(A) (1) 10-1
10 (2)
(2)
10-2 (3)
(3)
1 10-3 (4)
10-4
10-1 (4) (5) (6)
(5)
10-5
10-2 10-6
10-7
10-3
(6)
10-8
10-4 10-9
0 0.2 0.4 0.6 0 10 20 30 40 50
VF (V) VR (V)
pulsed condition pulsed conditions

(1) Tj = 150 °C (1) Tj = 150 °C
(2) Tj = 125 °C (2) Tj = 125 °C
(3) Tj = 100 °C (3) Tj = 100 °C
(4) Tj = 85 °C (4) Tj = 85 °C
(5) Tj = 25 °C (5) Tj = 25 °C
(6) Tj = -40 °C (6) Tj = -40 °C
Fig. 4. Forward current as a function of forward Fig. 5. Reverse current as a function of reverse
voltage; typical values voltage; typical values
aaa-012472
2.5
Cd
(nF)
2.0
1.5
1.0
0.5
0
0 15 30 45
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse voltage; typical values

11. Test information
IF
IR(meas)
time
IR
trr 006aad022
Fig. 7. Reverse recovery definition; step recovery
dlF
IF
dt
trr
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 8. Reverse recovery definition; ramp recovery
IF
time
VF
VFRM
VF
time
001aab912
Fig. 9. Forward recovery definition

P t1
duty cycle δ =
t2 t2
t1
t
006aaa812
Fig. 10. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
12. Package outline

4.4
4.2
0.82
2.13
1.3 0.74
1.1
0.45
0.25 1.3
2 1 0.9
5.9 6.6
4.8 4.2 5.7 6.4
4.4 3.8
3 0.45
0.25
2.15 0.24
1.95 3.5 0.16
3.1
Dimensions in mm 14-10-13
Fig. 11. Package outline CFP15 (SOT1289)

13. Soldering
Footprint information for reflow soldering of CFP15 package SOT1289
4.6
3.73
1.8 (2×)
1.4 (2×)
1.6 (2×)
2.13
1.64 1.44 1.34
0.6 0.4
0.11
1.9
7.5
1.02
5.16 4.96
0.2
1.9
0.2
0.05
0.6
occupied area solder resist
1.7 (4×)
solder lands solder paste 0.2
2.4
3.8
13-08-28
Issue date Dimensions in mm 4 sot1289_fr
14-03-12
Fig. 12. Reflow soldering footprint for CFP15 (SOT1289)

14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMEG45U10EPD v.3 20141216 Product data sheet - PMEG45U10EPD v.2
Modifications: • Package outline drawing updated
PMEG45U10EPD v.2 20140416 Product data sheet - PMEG45U10EPD v.1
PMEG45U10EPD v.1 20140217 Objective data sheet - -

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punitive, special or consequential damages (including - without limitation -
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whatsoever, Nexperia’s aggregate and cumulative liability towards
Document Product Definition customer for the products described herein shall be limited in accordance
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[short] data the objective specification for product make changes to information published in this document, including without
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multiple devices. The latest product status information is available on Quick reference data — The Quick reference data is an extract of the
the Internet at URL http://www.nexperia.com. product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these

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Product specification — The information and data provided in a Product Limiting values — Stress above one or more limiting values (as defined in
data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Nexperia and its customer, unless Nexperia and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the Nexperia product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................3
10 Characteristics ....................................................... 5
11 Test information ..................................................... 7
12 Package outline ..................................................... 8
13 Soldering ................................................................ 9
14 Revision history ................................................... 10
15 Legal information .................................................11
15.1 Data sheet status ............................................... 11
15.2 Definitions ...........................................................11
15.3 Disclaimers .........................................................11
15.4 Trademarks ........................................................ 12
© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 16 December 2014

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PMEG45U10EPD

45 V, 10 A extremely low VF MEGA Schottky barrier rectifier

2. Features and benefits

4. Quick reference data

VF forward voltage IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; - 430 490 mV

IR reverse current VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; - 20 50 µA

VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3; - 230 600 µA

IF forward current Tsp = 125 °C; δ = 1 - 14 A

IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 130 °C; - 10 A

Tamb ambient temperature -55 150 °C

Product data sheet 16 December 2014 2 / 13

Symbol Parameter Conditions Min Max Unit

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

FR4 PCB, standard footprint

Product data sheet 16 December 2014 3 / 13

Ceramic PCB, Al2O3, standard footprint

Product data sheet 16 December 2014 4 / 13

IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; - 338 - mV

IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02; - 355 - mV

IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02; - 380 430 mV

IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; - 430 490 mV

IR reverse current VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C; - 15 - µA

VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3; - 230 600 µA

Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 1170 - pF

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 34 - ns

trr reverse recovery time dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A; - 16 - ns

VFRM peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 300 - mV

Product data sheet 16 December 2014 5 / 13

pulsed condition pulsed conditions

Product data sheet 16 December 2014 6 / 13

11. Test information

Fig. 7. Reverse recovery definition; step recovery

Fig. 8. Reverse recovery definition; ramp recovery

Fig. 9. Forward recovery definition

Product data sheet 16 December 2014 7 / 13

Fig. 10. Duty cycle definition

12. Package outline

Fig. 11. Package outline CFP15 (SOT1289)

Product data sheet 16 December 2014 8 / 13

1.64 1.44 1.34

Fig. 12. Reflow soldering footprint for CFP15 (SOT1289)

Product data sheet 16 December 2014 9 / 13

14. Revision history

Product data sheet 16 December 2014 10 / 13

In no event shall Nexperia be liable for any indirect, incidental,

Applications — Applications that are described herein for any of these

Terms and conditions of commercial sale — Nexperia

Product data sheet 16 December 2014 11 / 13

grant, conveyance or implication of any license under any copyrights, patents

Export control — This document as well as the item(s) described herein

Non-automotive qualified products — Unless this data sheet expressly

Translations — A non-English (translated) version of a document is for

Product data sheet 16 December 2014 12 / 13

© Nexperia B.V. 2017. All rights reserved

Product data sheet 16 December 2014 13 / 13

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