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Double Patterning
Double Patterning
vlsijunction.com/2015/08/double-patterning.html
The downsides of using double patterning include increased mask (reticle) and
lithography costs, and the imposition of further restrictions on the ways in which circuits
can be laid out on chip. This affects the complexity of the design process and the
performance, variability and density of the resultant devices.
Here the original mask is split-ed 2 different masks like mask A and Mask B in order to
avoid diffraction effects like shorts and opens. i.e the cost of mask (lithography costs)
increases as we move to double patterning and also introduces some extra DRC Rules in
the design.
A number of reticle enhancement techniques have been introduced to counteract the
diffraction problem as it has become more acute with each new process node.
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Phase-shift masks: were introduced at the 180nm process node. They alter the phase of
the light passing through some areas of the mask, changing the way it is diffracted and so
reducing the defocusing effect of mask dimensions that are less than the wavelength of the
illuminating light. The downside of using phase-shift techniques is that the masks are
more difficult and expensive to make.
Optical-proximity correction (OPC) techniques work out how to distort the patterns
on a mask to counter diffraction effects, for example by adding small ‘ears’ to the corners
of a square feature on the mask so that they remain sharply defined on the wafer. The
technique introduces layout restrictions, has a computational cost in design, and means
that it takes longer and costs more to make the corrected masks.
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