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Assignment 4 Microelectronics Devices To Circuits
Assignment 4 Microelectronics Devices To Circuits
a. A2 = 3 A1; A3 = 9 A1
b. A2 = 9 A1; A3 = 3 A1
c. A2 = 13 A1; A3 = 14 A1
d. A2 = 14 A1; A3 = 13 A1
Ans: (a) A2 = 3 A1; A3 = 9 A1
Q7: For the inverter chain shown below, find the minimum delay through the inverter chain. Consider
self-loading (γ=1), input capacitance of A1 to be C1 and load capacitance CL = 27C1 .
a. 18 tp0
b. 15 tp0
c. 12 tp0
d. 9 tp0
Ans: (c) 12 tp0
Q8: Increasing fan-out of a CMOS inverter _____ the propagation delay.
a. Increases
b. Decreases
c. Does not affect
d. Decreases exponentially.
Ans: (a) increases
Q9: A fast CMOS inverter can be made by keeping ______.
a. High output capacitance
b. Low output capacitance
c. High on resistance
d. Low input impedance
Ans: (b) Low output capacitance
Q10: The intrinsic delay of an inverter is _________ the transistor size and _______ the physical
layout and the technology parameter.
a. Independent of; Independent of
b. Independent of; Depends on
c. Dependent on; Independent of
d. Dependent on; Depends on
Ans: (b) Independent of; Depends on
Week 4: Assignment 4: Brief Explanation
Q1. Explanation:
Two types of scaling are constant field scaling and constant voltage scaling.
Constant field scaling: it yields the reduction in power-delay-product of the transistor. Hence it
requires the reduction in power supply for the feature size.
Constant voltage scaling: this is preferred scaling technique as it provides voltage compatibility with
other technologies.
Q2. Explanation:
When both NMOS and PMOS are in saturation, the inverter remains in its transition region. Here
small changes in input voltage can cause a large change in output voltage.
Q3. Explanation:
Noise margin of CMOS inverter is greater than BJT based inverter.
Q4. Explanation:
An ideal inverter exhibits high input impedance and low output impedance.
Q5. Explanation:
Improving the PMOS width improves tpLH of the inverter increasing the charging current, but it also
degrades tPHL by causing a large parasitic capacitance. Because as you go on increasing the PMOS
width right, the PMOS itself might be doing very good, but then it will start loading your external
load capacitance.
Q6. Explanation:
CL/C1 has to be evenly distributed across N=3 stages
𝑁 3
𝑓 = √𝐹 = √27 = 3
Q8. Explanation:
Increasing fan-out of a CMOS inverter increases the propagation delay.
Q9. Explanation:
A fast CMOS inverter can be made by keeping low output capacitance and decreasing the on
resistance of the transistors.
Q10. Explanation:
The intrinsic delay of inverter is independent of the transistor size and depends on the physical layout
and the technology parameter.