Junction Capacitance

Junction capacitance is the capacitance which forms in a PN junction diode under

reverse bias.
In a normal capacitor, the two parallel conducting plates are electrodes which allow
the conduction. Whereas, the medium between two parallel conducting plates is
purely insulating dielectric material which does not allow conduction.
When a voltage or potential difference is applied across a capacitor the charges
accumulates at the electrodes. The voltage will not move through the dielectric. But
the dielectric medium will allow an electric field to flow through it when huge
number of charges accumulates at the electrodes. However, the electrodes are able
to store electric charge. This ability of storing electric charge is known as capacitance.

n similar manner, when reverse bias voltage applied across a PN junction diode, the
two regions P and N are behaves as electrodes (with less resistance) and the
depletion region between two regions acts as dielectric medium (with more
resistance). The P, N regions (electrodes) and depletion region (dielectric medium)
allows the storage of charge in electric field. This ability of storing the charge is
nothing but capacitance which in fact is termed in PN junction diode as junction
capacitance or transition capacitance or depletion capacitance.
Overlap Capacitance
 a bias-independent component which models the effective overlap capacitance
between the gate and the heavily doped source/drain
 a gate-bias dependent component between the gate and the lightly doped
source/drain region.
 The overlap capacitance account for lateral diffusion (the amount the source
and drain extend under the gate) using SPICE parameter LD = 5E-08 or L D =
0.05 m m.

Gate Capacitance

Gate and channel here are separated from each other with the gate oxide layer. As
soon as positive voltage is applied to the gate, electrons flows from the source into
the channel and aggregates there. As soon as the gate voltage becomes higher than
threshold voltage, electrons are travelling from the source to drain.

During the above described process of channel inverting there is a capacitor form
between gate and the channel as depicted below. There is an electric field forms
between positive charges of the gate and negative charges of the channel.

Anti Fuse
An antifuse is an electrical device that performs the opposite function to a fuse.
Whereas a fuse starts with a low resistance and is designed to permanently break
an electrically conductive path (typically when the current through the path exceeds
a specified limit), an antifuse starts with a high resistance, and programming it
converts it into a permanent electrically conductive path (typically when the voltage
across the antifuse exceeds a certain level).

SRAM Technology
SRAM (static RAM) is a type of random access memory (RAM) that retains data bits
in its memory as long as power is being supplied. Unlike dynamic RAM (DRAM),
which must be continuously refreshed, SRAM does not have this requirement,
resulting in better performance and lower power usage. However, SRAM is also
more expensive than DRAM, and it requires a lot more space.

EEPROM TECHNOLOGY
EEPROM is a type of non-volatile ROM that enables individual bytes of data to be
erased and reprogrammed. That is why EEPROM chips are known as byte erasable
chips. EEPROM is usually used to store small amounts of data in computing and
other electronic devices.