PROBLEM 1

SIMULATION APPROACH
(i) Abrupt Junc on
Given,

Length of p-type region = 2 × 10 𝑚, Length of n-type region = 2 × 10 𝑚, N-type region doping

concentra on (𝑁 ) = 1 × 10 /𝑐𝑚 , Built-in poten al (𝑉 ) = 0.6 V, 𝜖 = 11.8, 𝜀 = 8.85 ×
10 F/cm, 𝑛 = 10 /cm , q = 1.6 × 10 C

Now, Temperature (𝑇) = 300 + 1.5 × 5 = 307.5 𝐾

.
Thus, Thermal voltage (𝑉 ) = 0.026 × = 0.0266 𝑉

The p-type region doping concentra on (𝑁 ) is calculated using the rela on 𝑉 = 𝑉 𝑙𝑛

Thus,

P-type region doping concentra on, 𝑁 = 𝑒𝑥𝑝 = 5.99 × 10 /𝑐𝑚

Deple on width, 𝑊 = + = 1.4456 × 10 𝑐𝑚

Now,

Deple on width in n-type region, 𝑊 = × 𝑊 = 0.5418 × 10 𝑐𝑚

Deple on width in p-type region, 𝑊 = × 𝑊 = 0.9038 × 10 𝑐𝑚

The Charge profile (𝜌 ) of the deple on region is obtained a er the above calcula ons. A er that,

(A) The Electric field profile is obtained by integra ng the Volume charge density (𝜌 ) and finally
the Voltage profile is calculated by integra ng Electric field intensity (𝐸). I have implemented
Trapezoidal method for numerical integra on and calcula on of Electric field and Voltage
profile with a step size of 0.0001.
(B) I have implemented LU Decomposi on method for solving the Poisson’s equa on and
calcula ng the Voltage profile (𝑉). First the con nuous par al deriva ve is converted into
finite- difference equa on of voltage such that, [𝐴][𝑉] = − [𝜌 ] where, ℎ is the step size of
finite-difference equa on, [𝐴] is the co-efficient matrix for implemen ng finite-difference and
𝜖 = 𝜖 𝜖 . The solu on for [𝑉] is obtained by LU Decomposi on method. I have taken a step
size of 0.001.
(C) I have implemented Gauss-Seidel method for solving the Poisson’s equa on and calcula ng
the Voltage profile (𝑉). First the con nuous par al deriva ve is converted into finite-
difference equa on of voltage such that, [𝐴][𝑉] = − [𝜌 ] where, ℎ is the step size of finite-
difference equa on, [𝐴] is the co-efficient matrix for implemen ng finite-difference and 𝜖 =
𝜖 𝜖 . The solu on for [𝑉] is obtained using Gauss-Seidel method. I have taken a step size of
0.01.
(ii) Linearly Graded Junc on
Given,

Length of p-type region = 2 × 10 𝑚, Length of n-type region = 2 × 10 𝑚, Built-in poten al

(𝑉 ) = 0.6 V, 𝜖 = 11.8, 𝜀 = 8.85 × 10 F/cm, 𝑛 = 10 /cm , q = 1.6 × 10 C.

Now, Temperature (𝑇) = 300 + 1.5 × 5 = 307.5 𝐾

.
Thus, Thermal voltage (𝑉 ) = 0.026 × = 0.0266 𝑉

If the impurity gradient of the linearly graded junc on be a.

Deple on width, W = and Built-in poten al, 𝑉 = 2𝑉 𝑙𝑛

By solving above two equa ons,

𝑊= 𝑒 = 1.7421 × 10 𝑐𝑚

2𝑛
𝑎= 𝑒 = 8.89 × 10 /𝑐𝑚
𝑊
The Charge profile (𝜌 ) of the deple on region is obtained a er the above calcula ons. A er that,

(A) The Electric field profile is obtained by integra ng the Volume charge density (𝜌 ) and finally
the Voltage profile is calculated by integra ng Electric field intensity (𝐸). I have implemented
Trapezoidal method for numerical integra on and calcula on of Electric field and Voltage
profile with a step size of 0.0001.
(B) I have implemented LU Decomposi on method for solving the Poisson’s equa on and
calcula ng the Voltage profile (𝑉). First the con nuous par al deriva ve is converted into
finite- difference equa on of voltage such that, [𝐴][𝑉] = − [𝜌 ] where, ℎ is the step size of
finite-difference equa on, [𝐴] is the co-efficient matrix for implemen ng finite-difference and
𝜖 = 𝜖 𝜖 . The solu on for [𝑉] is obtained by LU Decomposi on method. I have taken a step
size of 0.01.
(C) I have implemented Gauss-Seidel method for solving the Poisson’s equa on and calcula ng
the Voltage profile (𝑉). First the con nuous par al deriva ve is converted into finite-
difference equa on of voltage such that, [𝐴][𝑉] = − [𝜌 ] where, ℎ is the step size of finite-
difference equa on, [𝐴] is the co-efficient matrix for implemen ng finite-difference and 𝜖 =
𝜖 𝜖 . The solu on for [𝑉] is obtained using Gauss-Seidel method. I have taken a step size of
0.01.

RESULT
(i) Abrupt Junc on
(A) The Charge profile, Electric Field Profile and Voltage Profile obtained using Trapezoidal method
are given below,
The plots using the in-built func ons are given below,

(B) The Voltage Profile obtained using LU Decomposi on method is given below,
The Voltage Profile obtained using MATLAB Operator is given below,

(C) The Voltage Profile obtained using Gauss-Seidel method is given below,
(ii) Linearly Graded Junc on
(A) The Charge profile, Electric Field Profile and Voltage Profile obtained using Trapezoidal method are
given below,
The plots using the in-built func ons are given below,

(B) The Voltage Profile obtained using LU Decomposi on method is given below,
The Voltage Profile obtained using MATLAB Operator is given below,

(C) The Voltage Profile obtained using Gauss-Seidel method is given below,

CONCLUSION
(i) Abrupt Junc on
(A) The built-in poten al obtained using implemented Trapezoidal method and inbuilt MATLAB
func on is exactly equal. The value of the built in poten al obtained is 0.600128 V. The MATLAB
func on used for comparison is cumtrapz().

(B) The built-in poten al obtained using LU Decomposi on method and inbuilt MATLAB operator is
exactly equal. The value of the built in poten al obtained is 0.599660 V.

(C) The built-in poten al obtained using Gauss-Seidel method is 0.586815 V

(ii) Linearly Graded Junc on
(A) The built-in poten al obtained using implemented Trapezoidal method and inbuilt MATLAB
func on is exactly equal. The value of the built in poten al obtained is 0.600014 V. The MATLAB
func on used for comparison is cumtrapz().

(B) The built-in poten al obtained using LU Decomposi on method is 0.608194 V and inbuilt MATLAB
operator is 0.663274 V.

(C) The built-in poten al obtained using Gauss-Seidel method is 0.608194 V

PROBLEM 2
SIMULATION APPROACH
Given,

N = 1 × 10 /cm and N = 1 × 10 /cm

Assump ons made,

Boron is taken as acceptor type impurity with ioniza on energy of 0.045 eV and Phosphorus is taken
as donor type impurity with ioniza on energy of 0.045 eV.

Effec ve density of states in conduc on band, N = 2.8 × 10 /cm and

Effec ve density of states in valence band, N = 1.04 × 10 /cm

The energy band-gap of Si is considered 1.12 eV at a temperature of 300 K.

Thermal voltage, V = 0.0258 V

The valence band is taken as reference for calcula on of Fermi energy level (E ). The calcula on is
done by solving Charge Neutrality Equa on using Newton-Raphson Method.

RESULT & CONCLUSION

The Fermi Level is located 0.124484 eV above the valence band.
The Energy Band diagram is shown below,