NIKO-SEM N-Channel Enhancement Mode PK632BA

Field Effect Transistor PDFN 5x6P

Halogen-Free & Lead-Free

D D D D D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
30V 3.3mΩ 78A G G. GATE
D. DRAIN
#1 S
S. SOURCE
S S G
S
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V

3
TC = 25 °C 78
Continuous Drain Current ID
TC = 100 °C 49
1
Pulsed Drain Current IDM 150
TA = 25 °C 27
Continuous Drain Current ID A
TA = 70 °C 22
Avalanche Current IAS 40
Avalanche Energy L = 0.1mH EAS 80 mJ
TC = 25 °C 36
Power Dissipation PD W
TC = 100 °C 14

4
TA = 25 °C 4.6
Power Dissipation PD W
TA = 70 °C 2.9
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient t ≦10s RJA 27
2
Junction-to-Ambient Steady-State RJA 48 °C / W
Junction-to-Case Steady-State RJC 3.4
1
Pulse width limited by maximum junction temperature.
2 2
The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
Package limitation current is 40A.
4
The Power dissipation is based on RJA t ≦10s value.

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NIKO-SEM N-Channel Enhancement Mode PK632BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.5 1.9 2.35
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 20V, VGS = 0V, TJ = 55 °C 10

Drain-Source On-State VGS = 4.5V, ID = 16A 3 4

1 RDS(ON) mΩ
Resistance VGS = 10V, ID = 20A 2.1 3.3
1
Forward Transconductance gfs VDS = 5V, ID = 20A 62 S
DYNAMIC
Input Capacitance Ciss 2096
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 393 pF

Reverse Transfer Capacitance Crss 229

Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω

2
VGS = 10V 42
Total Gate Charge Qg VDS = 15V , VGS = 10V,
VGS = 4.5V 22
2 ID = 20A
Gate-Source Charge Qgs 6.6 nC
2
Gate-Drain Charge Qgd 11
2
Turn-On Delay Time td(on) 25
VDS = 15V ,
2
Rise Time tr 15
ID  20A, VGS = 10V, RGEN =6Ω nS
2
Turn-Off Delay Time td(off) 54
2
Fall Time tf 17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
3
Continuous Current IS 36 A
1
Forward Voltage VSD IF = 20A, VGS = 0V 1 V
Reverse Recovery Time trr 28 nS
IF = 20A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 15 nC
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
1
2
Independent of operating temperature.
3
Package limitation current is 40A.

REV1.1 E-29-1
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 NIKO-SEM N-Channel Enhancement Mode PK632BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

40 40
VGS=3.3V VGS=10V
VGS=9V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

VGS=7V
32 VGS=3.2V VGS=5V 32
VGS=4..5V
VGS=3.5V
VGS=3.4V
24 24
VGS=3.1V

16 VGS=3V 16
25℃

VGS=2.9V
125℃ -20℃
8 8
VGS=2.8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature Capacitance Characteristic

2.0 2500

1.8
Normalized Drain to Source

2000 CISS
C , Capacitance(pF)

1.6
ON-Resistance

1.4
1500

1.2

1000
1.0

0.8
VGS=10V 500
ID=20A COSS
0.6
CRSS
0.4 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30

TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics Source-Drain Diode Forward Voltage

10
Characteristics 1000
VGS , Gate-To-Source Voltage(V)

VDS=15V
IS , Source Current(A)

8 ID=20A
100

10

150℃ 25℃
1
2

0 0.1
0 9 18 27 36 45 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V)

REV1.1 E-29-1
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NIKO-SEM N-Channel Enhancement Mode PK632BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Safe Operating Area Single Pulse Maximum Power Dissipation

1000 100
Operation in This Area is
Limited by RDS(ON)
Single Pulse
100 80 RθJA = 48˚C/W
TA=25˚C
ID , Drain Current(A)

10 60

Power(W)
1ms

1 10ms 40
100ms
NOTE :
0.1 1.VGS= 10V 20
2.TA=25˚C DC
3.RθJA = 48˚C/W
4.Single Pulse

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10
Transient Thermal Resistance
r(t) , Normalized Effective

Duty cycle=0.5

0.2 Notes

0.1
0.1
0.05
1.Duty cycle, D= t1 / t2
0.02 2.RthJA = 48 ℃/W
3.TJ-TA = P*RthJA(t)
0.01 single pulse 4.RthJA(t) = r(t)*RthJA

0.01
0.0001 0.001 0.01 0.1 1 10 100 1000

T1 , Square Wave Pulse Duration[sec]

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