Mask designing of linear variable filters

Jiandong Pan, Fengshang zhang, Yixun Yan

Shanghai Institute of Technical Physics,
Academic Sinica, Shanghai, china, 200083

ABSTRACT

From the evaporating characteristic of source and some parameters of chamber, the aut—
hors of this paper derived out the equation of the contour of the mask which is used to
coat linear variable filter(LVFs) . According to the special length of substrate, we designed
a mask which is used to coat LVFs of the spectra range of 8—14 p m by a computer, and m-
ade stainless masks.
1.INTRODUCTION

LVFs can be used to provide fast spectra scan and multichannel detection simultaneous—
ly with a compatible spectra resolution. It has high stability, small size and low price co—
mpare to prism or grating spectrometer. It's easy to be assembled together with detector.
Thus, it is being in wide use in multispectra detection, fast spectrometer and other fields.
Some use of LVFs in atmosphere detection and remote sensing have been reported in resent
years . This report derived out the equation of the contour of the mask which is used to c—
oat LVFs.
2.THE THEORETICAL THICKNESS DISTRIBUTION ALONG THE RADIUS

The calculation of the theoretical thickness in the direction of the radius of the subst-
rate is on the base of some hypothesis which are given out below:
a.The rotation of the substrate is fast enough,so that the evaporating speed of material
in every rotational period is a constant.
b.there is no collide among the evaporating moleculars of material and the moleculars
of the gas which is remain in the chamber.
c.The evaporating moleculars deposit completely when they get on the substrate and fo-
am a firm layer, whose density is equal to the density of bulk material.
d.The evaporating characteristic of source does not change.
2.1.The layer thickness distribution on substrate with no mask
In this paper, we just consider flat source as shown in Fig.1.the thickness on the point
•
15 L 1.
UrO.

h0 21rIL 0 m0 23r cos2q cos 0

I
p2
=
m0 2x Lul
f d$ (1)
2 ir 0 (L2+r+r2+2r0rcos $ )(u+8)/2
— C. A(r). B(r)

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 where C = m0L1/2 2
A(r) =(L2+r+r2)"3'2
2 ii (n+3)(n+5)
B(r) =J [1 + D2(r)cos2$
0 2! .22
(n+3)(n+5)(n+7)(n+9)
+ D4(r)cos4+']d$ 2 (2)
4! 2
and D(r) = 2r0r/(L2+r+r2), and m0 are the specific
gravity and mass respectively of eva porated material,
n=1 is the cosine distribution constant of the projec-
ting of the evaporating moleculars for flat source wh-
ich is heat with resistance. 0 , q and ' are as shown in Fig.1. Diagram showing the
Fig.1. flat source and substrate
When n=1 and neglect higher power items than six, we can get:
B(r)= ir F(r)
15 105
where F(r)= [2 + 3D2(r) + —D4(r) + —-—-D6(r)]
2 4
On the monitoring plate which is on the centre of substrate, the thickness is:
2ir m0L2
hmø A(r)J d* = (3)
2r2 0 (L2+r)2
2.2.The thickness distribution for setting a mask.
If the central angle of the breach of the mask is 0 (r) on the circumference whose r—
adius is r as shown in Fig.2. Then the depositing time of the substrate on this circumf e—
rence is tT:
0 (r)
tT •T (4)
3600
where T is the rotation period.
The time when the monitoring plate is being depositing is T.
During the time T,the thickness of the point M which is on the circumference is hrp:
tT
hT = f hrcdt (5)
0
therefore, after J periods, the thickness of the point M is h:
J-1 tT
hr = f hr0dt (6)
i=0 0 Cr4.2
put formula (1), (4) into formula (6), we get:
0 (r)
hr = J. C. A(r). F(r). (7)
3600
As the same reason, we have: Fig.2. diagram showing the
hm = hmo J'. T central angle of the mask
(8)
where hm is the thickness of the monitoring Plate after J periods.
2.3.The equation of the contour of the mask which is used to coat LVFs
When coating, we monitor the layer thickness of the monitoring plate, mask make

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 the thickne8s of every point of the substrate in the direction of radius vary as shown
in Fig.3 . If the vary is linear as described as the formula below:
hr
—k.r+C0
hm
(9)
where hr 18 the thickness of any point Q in the direction of radius on the substrate, k
and C0 is a constant. And so, on the substrate in the direction of radius, from point
Q:& to point Qg, the thickness of every point vary linearly. Put formula (7), ( 8) into
formula (9) and use formula (8) , we get:
720 1
0(r) — ______ . (k.r+C0) (10)
(L2+r)2 A(r)F(r)
On the other hand , on the LVFs as shown in Fig.3 , there is:
—=—
hr h1 h2h1
.R0+
h2h1
hm
h1,.

co=—--
hm Lohm
L0hm
compare the formula above and formula (9) , there is:
h1 h2-h1
.R0
Lohm

(
/'____
_-— r'
(11)

k= (12)

we can describe layer thickness as below:

xm Fig.3 DiaLram showing the
hm (13) LVFs on substrate
4Nm
Xr P
hr (14)
4Nr
where P is the multiple of the one fourth wave length . which is the monitor wave
length. Nm, Nr 8 the refractive index of materials corresponding to the central wave
length of the monitor plate and the point Q whose radius is r on substrate respective—
ly. As described as formula (7) , hr is just relate to 0 (r), and has nothing to do with
the index of refraction of materials. According to formula (14), at the same point of r
on substrate, we can get different layers of the same central wave length of different
materials with the mask whose contour equation is the formula (10). or say in another
way, we can get a multiplayer whose spectra characteristic is the same as the monitor
plate, but it's central wave length is vary linearly along the radius of the substrate.
Therefore, if the parameters h1, h2, L0, R0 and the monitor wave lengt . m(hm) h
ave been known, we can determine C0 and k,and design the mask for coating the LVFs
according formula (12).
3.DESIGN THE MASK FOR COATING LVFs

For the coater which chamber radius is 450mm, suppose some parpmeters: L=230mm,
r0=155mm, R0=95mm, therefore, we can design the mask used to coat LVFs.
On the situation of the far IR LVFs of 8—14 m, m, ). 2=14 m, the length of
substrate is 6mm, use ). = 2.5 m as monitoring wave length with six grade monitor.
Therefore, use formulas (13), (14), (11) and (12), we can get: C0=2.2087 x 10, k=1.0435 X
10, put the values of this two and other relative parameters into formula (10), we

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 can get:
6.0835 x 10(76925+r2)(1.0435 x 10r+2.2087 x 10)
0 (r) —
(76925+r2)e+1.4415 x 105(76925+r2)4+3.4632 x 1O'°(76925-êr2)2+1.1194 x 1021
Use a personal computer,
we can get the central angl-
es of the breach of the mask
corresponding to the various
vaules of the radius of the
mask. If we design a mask
having thirty two semmtry
and equal openings, we devide
the value of 0 (r) into thir-
ty two equal parts,therefore,
we can draw out the diagram
of the mask with a computer Fig.4 Diagram showing the mask
as shown in Fig.4. to coat the LVFs of 8—14 p m

4. CONCLUSION

It's a ideal method to coat LVFs of 8-14 p m by means of the mask designed in this
paper. The structure is simple and stable. According to this principle, we can design a
mask to coat LVFs of any spectra and length of substrate.
5.REFERENCE

1. P.F.GU, Thin Solid Films, 187(1990).

2. P.F. GU, Technology of Optical Thin Films, Zhejiang University Press.

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