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com

BSC0702LS

MOSFET
OptiMOSTMPower-Transistor,60V SuperSO8

8 5
6
Features 7
6 7
8
5
•Idealforhigh-frequencyswitching
•Optimizedforchargers
•100%avalanchetested
•Superiorthermalresistance
•N-channel,Logiclevel 1 4
3
•Pb-freeleadplating;RoHScompliant 2
3
2
1
•Halogen-freeaccordingtoIEC61249-2-21 4
•QualifiedforStandardGradeapplications

Table1KeyPerformanceParameters S1 8D
Parameter Value Unit S2 7D
VDS 60 V
S3 6D
RDS(on),max 2.7 mΩ
G4 5D
ID 100 A
Qoss 43 nC
QG(0..4.5V) 24 nC

Type/OrderingCode Package Marking RelatedLinks

BSC0702LS PG-TDSON-8 0702LS -

Final Data Sheet 1 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 2 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 100 VGS=10V,TC=25°C
Continuous drain current ID - - 84 A VGS=10V,TC=100°C
- - 23 VGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current2) ID,pulse - - 400 A TC=25°C
Avalanche energy, single pulse3) EAS - - 100 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 83 TC=25°C
Power dissipation Ptot W
- - 2.5 TA=25°C,RthJA=50K/W2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - 0.9 1.5 K/W -
bottom
Device on PCB,
RthJA - - 50 K/W -
6 cm2 cooling area1)

1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.3,2016-10-25
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OptiMOSTMPower-Transistor,60V
BSC0702LS

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=49µA
- 0.5 1 VDS=60V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 2.3 2.7 VGS=10V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 3.1 3.9 VGS=4.5V,ID=25A
Gate resistance1) RG - 1.3 1.95 Ω -
Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 3300 4400 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance Coss - 670 890 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance Crss - 33 58 pF VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 7.7 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Rise time tr - 4.8 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 25 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Fall time tf - 5.4 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 6 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate to drain charge 1)
Qgd - 8 11 nC VDD=30V,ID=50A,VGS=0to4.5V
Switching charge Qsw - 12 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total 1)
Qg - 24 30 nC VDD=30V,ID=50A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.9 - V VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET Qg(sync) - 43 - nC VDS=0.1V,VGS=0to10V
Output charge 1)
Qoss - 43 58 nC VDD=30V,VGS=0V

1)
Defined by design. Not subject to production test
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.3,2016-10-25
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OptiMOSTMPower-Transistor,60V
BSC0702LS

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 69 A TC=25°C
Diode pulse current IS,pulse - - 276 A TC=25°C
Diode forward voltage VSD - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time 1)
trr - 40 80 ns VR=30V,IF=50A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 36 72 nC VR=30V,IF=50A,diF/dt=100A/µs

1)
Defined by design. Not subject to production test
Final Data Sheet 5 Rev.2.3,2016-10-25
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OptiMOSTMPower-Transistor,60V
BSC0702LS

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
100 120

100
80

80

60
Ptot[W]

ID[A]
60

40

40

20
20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101

1 µs

10 µs
102 100
0.5

100 µs 0.2
ZthJC[K/W]

0.1
ID[A]

101 1 ms 10-1
0.05
10 ms
0.02
DC
0.01
single pulse
100 10-2

10-1 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
400 8

360 5V
7
4.5 V
3V
320
6
3.2 V
280
3.5 V
5 4V
240

RDS(on)[mΩ]
4V
4.5 V
ID[A]

200 4

5V
160
3
3.5 V 7V
120
2 10 V
80
3.2 V
3V 1
40
2.8 V
0 0
0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300 350 400
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
400 160

360

320
120
280

240 25 °C 150 °C
gfs[S]
ID[A]

200 80

160

120
40
80

40

0 0
0 2 4 6 0 20 40 60 80
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 7 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
5.0 3

4.5

4.0

3.5
max 2

3.0
RDS(on)[mΩ]

490 µA

VGS(th)[V]
2.5 typ
49 µA
2.0

1
1.5

1.0

0.5

0.0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
150 °C
25°C max
150°C max
Ciss

103 102

Coss
C[pF]

IF[A]

102 101

Crss

101 100
0 20 40 60 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10

25 °C 8 30 V
100 °C
125 °C 7
12 V
48 V
6

VGS[V]
IAV[A]

101 5

100 0
100 101 102 103 0 10 20 30 40 50
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

70

65
VBR(DSS)[V]

60

55

50
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

5PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm

Final Data Sheet 10 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

Figure2OutlineFootprint(TDSON-8)

Final Data Sheet 11 Rev.2.3,2016-10-25

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OptiMOSTMPower-Transistor,60V
BSC0702LS

RevisionHistory
BSC0702LS

Revision:2016-10-25,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-06-09 Release of final version
2.1 2016-06-13 Insert Rds(on) max at Vgs 4.5
2.2 2016-06-21 Delete heading on first page
2.3 2016-10-25 Update " Features "

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TrademarksupdatedAugust2015

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Final Data Sheet 12 Rev.2.3,2016-10-25