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Fabrication Processes

Wafer Processing & Preparation


Oxidation
Epitaxy
Diffusion
Ion Implantation
Lithography
Etching
Metallization
Darshana Sankhe, DJSCE
CMOS Process Flow for N-well, P-well & Twin Tub
Fabrication Steps :
 Refining of Si
 Crystal growth and wafer preparation
 Epitaxy
 Oxidation
 Diffusion
 Ion Implantation
 Lithography
 Etching
 Metallization

Darshana Sankhe, DJSCE


Darshana Sankhe, DJSCE
Crystal growth :
 Growing of single crystal Si from fine granules of Si (EGS) under
controlled doping of impurities at a temperature ≥1000°c

 Impurities added to Si are


 P type Si – Boron (B2H6 i.e. diborane )
 N type Si – phosphorous (PH3 i.e. phosphene)
 Doping concentration – 1015 to16 /cm3

 CZ Process – Subsystems
 Furnace
 Crystal pulling system
 µp based Control system
 Temperature, speed of rotation, pull rate, flow rate, crystal
Darshana Sankhe, DJSCE
diamensions, gas source and exhaust system….
Crystal growth : CZ Process (Czochralski)

Darshana Sankhe, DJSCE


Oxidation : LOCOS – Reaction of Si with O2 to form SiO2
 Surface protection
 Dielectric for MOS structure (thin SiO2)
 Mask against diffusion / ion implant
 Device isolation (thick SiO2)
 Isolation for multilevel metallization

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Oxidation :

 Grow SiO2 on top of Si wafer at 900 – 1200 C with H2O or O2


in oxidation furnace
SiO2

p substrate

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Oxidation:

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Photolithography :Process of transferring
the pattern from mask to substrate

Darshana Sankhe, DJSCE


Darshana Sankhe, DJSCE
Diffusion Profile:

Darshana Sankhe, DJSCE


Diffusion Profile:

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Ion Implantation :

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Darshana Sankhe, DJSCE
CMOS Inverter Fabrication :
 N-well process
 P-well process
 Twin tub process

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

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CMOS Inverter using P-well Process:

N+ implant/diffusion

N+ mask

P+ N+ P

N-type substrate

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CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using N-well Process:

Darshana Sankhe, DJSCE


CMOS Inverter using P-well Process:

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CMOS Inverter using P-well Process:

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CMOS P-well INVERTER:

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CMOS Fabrication Mask :
1. Define window in oxide region/ well mask

2. Pattern poly mask

3. Diffusion mask(n-diffusion & p-diffusion)

4. Contact cut mask

5. Metal layer pattern

6. Over glass layer mask for bonding pads


Darshana Sankhe, DJSCE
CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


CMOS Inverter using Twin-Tub Process:

Darshana Sankhe, DJSCE


Thank You

Darshana Sankhe, DJSCE

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