Unit-1 Topic 3

A P-N Junction is also called a junction diode or semiconductor diode. It is a two terminal
semiconductor device. It is formed by joining a P-type layer and an N-type layer. It is one of the
simplest semiconductor devices as it allows current to flow in only one direction.
External metallic leads are connected to both the layers for making electrical connections. The
lead connected to the P type layer is called anode and lead connected to the N type layer is
called Cathode.

When the junction is formed then the electrons of the N type layer diffuse to the P-side and
simultaneously holes of P type layer diffuse towards the N-side through the junction, and then
combine with each other. Due to this movement of both types of charge carriers, a potential
difference is generated across the junction. The P-side has negative potential and the N-side
has positive potential. This potential difference is called barrier potential. For silicon diodes, the
value of barrier potential is 0.7 V and for Germanium diodes, its value is 0.3 V. This barrier
potential opposes further diffusion of charged carriers so that there is no movement of charge in
the middle region.
The region near the junction is depleted from the majority charge carriers, hence this middle
region is called the Depletion region.

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 Unit-1 Topic 3

A junction diode works when a DC source is applied across it. The application of a DC voltage
source to a diode is called biasing of the diode. Based on polarity of the applied voltage, there
are two possible “biasing” conditions for the P-N Junction Diode, which are as follows:

Forward Biasing.

If the positive of the DC source is connected to anode and the negative is connected to cathode,
then the biasing is called the forward biasing. The voltage of the DC source must be greater
than the barrier potential of the diode. The polarity of the DC source opposes the polarity of
barrier potential. Majority carriers from both sides are forced to cross the junction. A high current
starts flowing through the diode. This current is called the Forward current. It flows from anode
to cathode through the diode. The diode conducts heavily like a closed switch, offering
negligible resistance. The width of the depletion layer decreases.

Reverse biasing.

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 Unit-1 Topic 3

If the positive of the DC source is connected to the cathode and the negative is connected to the
anode, then the biasing is called the reversed biasing. The polarity of the DC source supports
the polarity of barrier potential. Majority carriers from both sides are forced to move away from
the junction. Hence no current flows through the junction. An extremely small current flows due
to the movement of minority carriers. This current is called the reverse current. It flows from
anode to cathode through the diode. The diode does not conduct and acts like an open switch,
offering infinite resistance. The width of the depletion layer increases.