BUP 307

IGBT
Preliminary data

• Low forward voltage drop

• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated

Pin 1 Pin 2 Pin 3

G C E

Type VCE IC Package Ordering Code

BUP 307 1200V 35A TO-218 AB Q67078-A4201-A2

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 35
TC = 90 °C 23
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 70
TC = 90 °C 46
Avalanche energy, single pulse EAS mJ
IC = 15 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C 23
Power dissipation Ptot W
TC = 25 °C 310
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150

Semiconductor Group 1 Dec-07-1995

 BUP 307

Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance
IGBT thermal resistance, chip case RthJC ≤ 0.4 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.1 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.8 3.3
VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.8 4.3
VGE = 15 V, IC = 15 A, Tj = 150 °C - 4 4.5
Zero gate voltage collector current ICES µA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1 250
VCE = 1000 V, VGE = 0 V, Tj = 125 °C - - 1000
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - 0.1 100

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 15 A 5.5 8 -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 2000 2700
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 160 240
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 65 100

Semiconductor Group 2 Dec-07-1995

 BUP 307

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 33 Ω - 30 45
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 33 Ω - 22 35
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 33 Ω - 230 310
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 33 Ω - 20 28
Total turn-off loss energy Eoff mWs
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 33 Ω - 1.7 -

Semiconductor Group 3 Dec-07-1995

 BUP 307

Power dissipation Collector current

Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C

320 36

W A

Ptot IC
28
240

24
200

20
160
16
120
12

80
8

40 4

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance IGBT

IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T

10 2 t = 3.5µs
10 0
p

10 µs
A K/W
IC ZthJC

100 µs
10 1 10 -1

1 ms

D = 0.50
10 ms 0.20
10 0 10 -2 0.10
0.05

single pulse 0.02

0.01
DC

10 -1 10 -3
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 10 V 10 10 10 10 10 s 10
VCE tp

Semiconductor Group 4 Dec-07-1995

 BUP 307

Typ. output characteristics Typ. transfer characteristics

IC = f(VCE) IC = f (VGE)
parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C

Typ. saturation characteristics Typ. saturation characteristics

VCE(sat) = f (VGE) VCE(sat) = f (VGE)
parameter: Tj = 25 °C parameter: Tj = 125 °C

Semiconductor Group 5 Dec-07-1995

 BUP 307

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 20 A parameter: VGE = 0 V, f = 1 MHz

20

VGE 16
400 V 800 V

14

12

10

0
0 20 40 60 80 100 120 140 nC 180
Q Gate

Typ. switching time t = f(RG)

inductive load, with freewheel diode BYP 102
parameter: Tj = 125 °C, VCE = 600 V, VGE = ± 15 V, IC = 10 A

Semiconductor Group 6 Dec-07-1995

 BUP 307

Package Outlines
Dimensions in mm
Weight: 8 g

Semiconductor Group 7 Dec-07-1995