Fg(on) 18 & measurement which describ resistance of the channel in series with so resistance. Thi measurement is of prime imp only for switching and chopper applications. This is measured most accurately (Seo Figure 4) by setting all terminals at 0 Vdes then apply an 20 voltage from drain to source and gates and measure ac current flow. ‘The ‘magnitude of the peak ac voltage should not exceed about a1 mos Vgg (as desoribed in the drain current section of this report); 1.e., there shouldbe no pinch off occurring {in the channel. Insulated gate FETS may be measured with de gate bias in the enhancement mode, DYNAMIC CHARACTERISTICS Junetion FETs and insulated gate FETs behave essen- ‘tally the same for small signal parameter testing so they will be considered together for the remainder of the paper. Test conditions require all of these moasure- ments to be made at the same voltage that Ipgg Was measured at (Type A and B) unless otherwise speeitied. Figures (5-10) show methods of measurement for these parameters, Vos [ammeren] Iss cure 5 Yop Vout [acvrvat Ry TYPICALLY 162 Ry, OF SUCH VALUE AS 70 CKuse NEGLIGIBLE Dc DROP AT Iss ts, = ¥ out 1 vin, ure 6 BYPASS ", [acyrvay| Yos = Yout Rg OF SUCH VALUE AS TO Ys Rg CAUSE NEGLIGIBLE De DROP. Rg SENSES AC DRAIN CURRENT. URE 7 Ypp Re TYPICALLYIM2 D oy (= & TEE] nt . tod it Giger OF Viet ricure 6 CAPACITANCE | = METER Vep » -Vps ny TYPICALLY IMe Veiga = 0'TO PREVENT "REACH THROUGH”, ce “AC SOURCE AND Gp TO GUARD SIGNAL. peo e Cg OF Yesh igure 9