Note: (1) All questions carry equal marks, out of which part ‘A’ and ‘B’ carry 3 marks

and part ‘C’

carries 4 marks.
(2) From each question, part ‘A’ and ‘B’ are compulsory and part ‘C’ has internal choice.
(3) Draw neat diagram, wherever necessary.
(4) Assume suitable data wherever necessary

Mark CO
Question Description
s Attained
Q.1.(A) Differentiate between insulators, conductors, and semiconductors 3 CO1
using forbidden energy gap.
(B) Explain clearly the difference between acceptor and donor 3 CO2
impurities and state what type of carriers are contributed by them.
(C) Draw the V-I characteristics of PN junction diode. Briefly describe 4
the mechanism of junction breakdown. CO2
OR
A germanium diode carries a current of 1mA of room temperature when a
forward bias of 0.15V is applied. Estimate the reverse saturation current at
room temperature.

Q.2.(A) Explain Mass action law. 3 CO1

(B) Why is silicon more widely used semiconductors material?
(C) Describe the difference between P-type and N-type semiconductors. 3 CO2
OR
Explain how a barrier potential is developed at the PN junction. 4 CO1

CO1 Learn how to develop and employ circuit models for elementary electronic components,
e.g.,resistors, sources, inductors, capacitors, diodes and transistors.
CO2 Be able to utilize various methods of circuit analysis, including simplified methods such
as series- parallel reductions, voltage and current dividers, etc.
CO3 Be able to understand the primitives of Boolean algebra, used to describe the processing
of binary circuits.