Basic Electronics Lab Manual

EXPERIMENT: 01
AIM OF THE EXPERIMENT:
1. To familiarization with electronics components and devices.
2. To find out its theoretical value and match it to its practical value to know the percentage of error.

COMPONENTS/EQUIPMENTS REQUIRED:

SL. NAME OF THE EQUIPMENT SPECIFICATION QUANTITY

NO.
1 PN Diode
2 Resistor
3 Capacitor
4 Transistor
5 IC
6 Digital Multimeter
7 Bread board

THEORY:
I. RESISTOR:
It is a circuit element which has the property by virtue of which it opposes the flow of
electron through the material.

The unit of resistance is “ohm” denoted by “Ω”

II. CAPACITOR:
It is a circuit element that has the capacity to store electric charge within it.
A capacitor stores electric energy in the form of electric field being established by the two
plates. Its unit is “farad“.

III. DIODE:
A diode is fabricated by joining a p-type semiconductor with a n-type semiconductor. A
diode can conduct current when it is in forward bias condition i.e. when p type semiconductor is
connected with the positive terminal of supply and n-type semiconductor is connected with
negative terminal of supply. But when the connection is alter diode become reverse biased and
cannot conduct current.
iv. TRANSISTOR: The transistor is a three layer, three terminal, two junction solid state
semiconductor device or two p and one n-type layer of material or vice-versa. There are two types
of transistors i.e pnp transistor and npn transistor.

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SL NAME OF THE TYPE PHYSICAL APPEARANCE SYMBOL UNIT

NO COMPONENT
Ω(OHM)
1 RESISTOR KΩ,
MΩ
F(FARAD),
ELECTOLYTIC µF, pF

2 CAPACITOR
CERAMIC F(FARAD),
µF, pF

F(FARAD),
MICA µF, pF

PN JUNCTION
3 DIODE DIODE

P-N-P

4
TRANSISTOR

N-P-N

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INTEGRATED OP-AMP
5
CIRCUIT

PROCEDURE:
RESISTOR: The theoretical value of resistor is calculated by using color code technique, where different colors
have different value (i.e. resistance). The value of 1st & 2nd RING is written then 3rd RING will be
represented by the 10th multiplier. The last band is for tolerance.

Resistance value= AB*10N

Where A=first band color value.

B=second band color value.

10N=Third band color value

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Digital Multi-meter [DMM]: By using digital multimeter the resistance is calculated and restored in a table.

CAPACITOR: The theoretical value of Ceramic capacitor (color) is calculated by a table of color code method
as determined in case of resistor. Also By using DMM the Electrolyte and mica capacitor value is determined.

Capacitor value= AB*10N

Where A=first band color value.

B=second band color value.

DIODE: The white sketched band on diode appears at the cathode end i.e. the terminal end and other one the
positive terminal i.e. the Anode end.

When negative terminal of DMM is connected with negative terminal of diode and the positive terminal
of DMM is connected with the positive terminal of diode. Some value of resistance is shown by Digital
multimeter, which indicates that diode is forward biased or there is flow of current. The resistance
value is very low in this bias. The Digital multimeter is connected with negative terminal of Diode and
the head of Digital multimeter is connected with positive terminal of diode. There is no flow of current in
this case, it is said to be reverse bias. The resistance value is very high in this bias.

TRANSISTOR: It is checked by DMM, either PNP or NPN. The middle terminal is always base. The base
emitter junction is forward biased and base collector junction is reverse biased. By using digital
multimeter (DMM) we can measure the resistance between base terminal and left side terminal and

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also measure the resistance between base terminal and right side terminal, if the measured
resistance value is smaller than second measured value than left side terminal is emitter and right
side terminal is collector and vice versa.

NPN TRANSISTOR: The middle pin is the base, left pin is emitter and right pin is collector.

PNP TRANSISTOR: The middle pin is the base, left pin is emitter and right pin is collector.

IC: It is checked by IC testing machine, IC consists of different pin connections and it’s numbering from its left
side. There are different type of IC’s i.e 8-pin IC, 16-pin IC, 32-pin IC, 40-pin IC and so on depending upon
applications. The 8-pin IC with pin names are listed below:
PIN NO 1 Stands for OFFSET NULL.
PIN NO 2 Stands for INVERTING.
PIN NO 3Stands for NON-INVERTING.
PIN NO 4 Stands for +Vcc.
PIN NO 5 Stands for ONSET NULL.
PIN NO 6 Stands for OUTPUT.
PIN NO 7 Stands for -
PIN NO 8 Stands for NC (NO CONNECTOR).
OBSERVATION:
TABULATION OF RESISTANCE:

SL NO COLOR THEORITICAL PRACTICAL % OF ERROR

VALUE VALUE
1
2
3
TABULATION FOR POTENTIOMETER:

SL NO RAB RBC RAC REMARK

TABULATION OF CAPACITOR:

SL NO TYPE VALUE
1
2
3

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SL NO. TYPE FORWARD BIASING VALUE REVERSE REMARK

BIASING VALUE

TABULATION FOR TRANSISTOR:

SL NO. BE CE RESISTANCE TYPES REMARKS

RESISTANCE

TABLE FOR IC

SL NO IC NUMBER IC TYPE NO.OF PINS

CONCLUSION:

TEST YOUR SELF

1. What is the use of multimeter?
2. How to calculate the value of resistor using color code?
3. How to know the value of resistor using multimeter?
4. How can we identify the P & N terminal of a P-N junction diode?
5. Identify the terminals of a transistor?
6. Write down the steps to measure supply ac voltage using multimeter?

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EXPERIMENT: 02
AIM OF THE EXPERIMENT:-
1. To introduce the basic structure of a cathode-ray Oscilloscope.
2. To get familiar with the use of different control switches of the device.
3. To visualize an ac signal, measure the amplitude and the frequency

APPARATUS REQUIRED:-
SERIAL EQUIPMENT SPECIFICATION QUANTITY
NO.
1 C.R.O 20 MHZ 1No

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2 Function Generator 50 to 400V,2MHZ 1 No

3 C.R.O Probe BNC to BNC 1 No

THEORY:-
The cathode ray oscilloscope (C.R.O) is an electronics device which is capable of giving a visual
identification of a signal waveform. No other instrument used in industry is as versatile as the cathode
ray Oscilloscope. It is widely used for trouble shooting radio and television receivers as well as for
laboratory work involving research and design.

FRONT PANEL CONTROL:

1. POWER: Push button switch to turn scope ON and OFF.LED indicates ‘POWER ON’ condition.
2. INTENSITY: Intensity control to adjust brightness of cathode ray tube (CRT) display.

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3. FOCUS: Focus control to adjust sharpness of CRT display.

4. Trace rotation (TR): Trace rotation plot Screw driver adjustment for alignment of trace with
gratitude compensates influence of earth’s magnetic field.
5. X-Y: Switch when pressed cuts off internal time base and selects X-Y operation.
6. X-POS: controls horizontal position of trace.
7. HOLD OFF: Controls hold off time between sweeps in the ratio 1:10 approx. normal position
fully counter clockwise.
8. TIME/DIV: Selects time base speeds from 0.5 Msec/div to 0.2Msec/div.

9. AT/NORMAL: Switch in/out position automatic triggering. Switch pressed normal triggering
with level control.
10. X-MAG X10: Switch when pressed magnifies trace or signal 10 times in X-directions on 0.5
microsec/div range this improves time base speed to 50ns/div.
11. CAL 0.2V/2V: Calibrator output sockets provided for probes compensation, signal available at
the sockets is flat top square wave, amplitude 0.2 Vpp and 2Vpp, frequency 1KHZ approx.
12. CT: Switch which pressed converts the instrument from oscilloscope to component tester made
one test lead is connected to CT sockets and the second test lead is connected to ground socket.
13. Y-POS1: Controls vertical position of CH-1 trace.

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14. INVERT (CH 1): Switch when pressed inverts the polarity of CH1 signal in combination with
ADD switch used for algebraic addition or difference of two channels.
15. CH1: Signal input for CH1 input impedance 1mega ohms, 11.25pf, 400Vpp max.
16. AC/DC/GD: Input coupling switches for CH-1. In case of AC both switch in out position, signal
is capacitive coupled. DC is blocked. In case of DC the AC/DC switch pressed. DC switch in
out position all components (AC/DC) of the signal are pressed.GD switch pressed AC/DC switch
may be at any position signal is disconnected input of vertical amplifier is grounded.
17. VOLTS/DIV: CH-1 input attenuator selects input sensitivity in mv/div or volts/div in 1-2-5
sequence.
18. DUAL: Switch in out position signal channel separately only DUAL switch pressed CH1 &CH2
in alternate mode DUAL+ADD Switches pressed CH1 and CH2 in CHOP mode.
VOLTAGE MEASUREMENT:

If the signal is applied to the vertical deflection plates only, a vertical line appears on the screen. The
height of the line is proportional to peak- to-peak voltage of the applied signal. The following procedure
is adopted for measuring voltages with CRO.

I) Shut off the internal horizontal sweep generator.

II) Attach a transparent plastic screen to the face of oscilloscope. Mark off screen with
vertical and horizontal lines in the form of graph.
III) Now, calibrate the oscilloscope against a known voltage. Apply the known voltage say
10v, to the vertical input terminals of the oscilloscope. Since the sweep circuit is shut off.
You will get a vertical line .adjust the vertical gain till a good deflection is obtained. Let
the deflection sensitivity be V volts/min.
IV) Keeping the length of vertical gain unchanged; apply the unknown voltage to be
measured to the vertical input terminals of CRO.
V) Measure the length of vertical line obtained. Let it be l mm. then, unknown voltage= l*V
volts.

FREQUENCY MEASUREMENT:

` The unknown frequency can be accurately determined with the help of a CRO. The steps of
procedure are given below.

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i) A known frequency is applied to horizontal input and unknown frequency to the vertical
input.
ii) The various controls are adjusted.
iii) A pattern with loops is obtained.
iv) The number of loops cut by the horizontal line gives the frequency on the vertical plates
(fv) and the numbers of loops cut by the vertical line gives the frequency on the
horizontal plates (fh).

PROCEDURE:

 Connect the function generator output at the input of CRO at channel 1 or channel 2.
 Select proper channel that is if output of function generator is connected to channel 1 then select
CH1 and if connected to channel 2 select CH2.
 Adjust the TIME/DIV key to get sufficient time period displacement of the wave on the CRO
screen.
 With fine tuning of TIME/DIV make the wave steady on the CRO screen.
 Use triggering control if the waveform is not steady,
 Keep VOLT/DIV key such that the wave form will be visible on the screen without clipping.
 Measure P-P reading along Y-axis. This reading multiply with the VOLT/DIV gives the peak to
peak voltage of the AC I/P waveform.
 Measure horizontal division of one complete cycle. This reading multiplies with the TIME/DIV
gives the time period for the given AC I/P signal.
 Calculate frequency using the formula f= 1/T.
 Note down the readings of voltage and frequency.

OBSERVATION:

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TABULATION:

TYPE OF Vpp V/D Vpp*V/D ‘V’IN Xpp T/D Xpp*T/D FREQ.IN

WAVE VOLTS KHZ
SINE
WAVE

SQUARE
WAVE

TRANGULAR
WAVE

CONCLUSION:

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TEST YOUR SELF

1. What is the use of CRO?

2. What is the highest frequency that can be measured by CRO available in our laboratory?
3. What is the highest voltage that can be measured by CRO available in our laboratory?
4. What is the bandwidth of a CRO available in our laboratory?
5. What do you mean by dual channel CRO?
6. What is the process to measure the voltage of a waveform using CRO?
7. How to calculate the frequency of a given waveform?
8. What do you mean by Lissajous+ pattern?
9. What is the use of Volt/Div and Time/Div knob in CRO?

EXPERIMENT: 03

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AIM OF THE EXPERIMENT:

1. To demonstrate the operational details of PN Junction Diode with the help of it’s VI
Characteristics.
2. To determine DC and AC resistances from the plotted VI characteristics graph of the given PN
Diode.

APPARATUS REQUIRED:
a. To setup:

SL. NAME OF THE EQUIPMENT SPECIFICATION QUANTITY

NO.
1 Voltmeter 0 to 1V 1
2 Ammeter 0 to 50 mA 1
3 Multimeter ODM-200 1

b. Designing Components:

SL. NAME OF THE EQUIPMENT SPECIFICATION QUANTITY

NO.
1 PN Diode IN 4007 1
2 Resistor 10KΩ 1
3 Potentiometer 0 to 100 KΩ 1
4 Supply voltage 0 to 30V 1
5 Patching Wire PVC Coated 3

THEORY:
FORWARD BIAS:

When an external voltage is applied i.e. positive terminal is connected to the anode terminal and
negative terminal is connected to the cathode terminal then it is in forward biased condition. Under the
application of external voltage the potential barrier at the junction is reduced and current starts flowing
through the diode.

REVERSE BIAS:

When an external voltage is applied i.e. positive terminal is connected to the cathode terminal and
negative terminal is connected to the anode terminal then it is in Reverse biased condition. Under the

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application of external voltage the potential barrier at the junction increases and no current flows through
the diode ideally but practically small current flows through the diode called as the reverse saturation
current. The magnitude of current is few micro amperes in range.

V-I CHARACTERISTIC OF PN-JUNCTION DIODE:-

The current voltage relationship in a PN Diode is defined by following relationship i.e.

Where, = Voltage across the diode.

=Current across Diode.

=Reverse Saturation Current across Diode.

T= Temperature in absolute scale=300k.

n= Ideality factor of a PN junction diode.

n=1 for Ge Diode

n=2 for Si Diode

q= charge of electron =1.6* coulomb

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PROCEDURE:
1. The circuit should be connected as per the circuit diagram.
2. After proper connection of the circuit power supply will be given.
3. The potentiometer (variable resistor) knob will be varied slowly and the current reading by the
ammeter will be note down
4. The step should be repeated for 10 times and the voltage and current reading by the voltmeter and
ammeter respectively will be note down.
5. The VI characteristic of the PN- Junction diode will be plotted down in the graph paper.

OBSERVATION:
1. TABULATION:
SL.NO VOLTAGE (VOLT) CURRENT(mA)
1
2
3
4
5
6
7
8
9
10

2. V-I CHARACTERISTICS CURVE:

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3. CALCULATION:

The Dc resistance of diode is given by

The Ac resistance of diode is given by

= ΔV/ΔI
Where ΔV=change in voltage

ΔI=change in current

CONCLUSION:

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TEST YOUR SELF

1. What is breakdown voltage?
2. What is threshold voltage?
3. What if PIV?
4. Give some example of different type of diode?
5. List some application of diode?
6. What is the forward voltage drop of silicon diode and germanium diode?
7. What is the reason for reverse saturation current?
8. Draw the ideal characteristic of diode?
9. Why silicon is preferred over germanium?
10. What is doping?
11. What is the difference between zener breakdown and avalanche breakdown?
12. Draw the V-I characteristics of silicon diode?

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EXPERIMENT: 04
AIM OF THE EXPERIMENT:
To study the half wave and full wave rectifier with and without capacitor filter. Record the wave forms and
measurement of average and RMS values.

APPARATUS REQUIRED:
SL NO. COMPONENTS SPECIFICATION QUANTITY
1 Diode IN4007(si) 4nos.
2 Resistor 1KΩ 1no.
3 Capacitor 1µf 1no.
4 CRO Probes BNC to BNC 2nos.
5 Connecting Wires PVC Coated 10nos.
6 Bread Board 1no.

THEORY:
Rectifier is an electronics device which converts the ac signal into pulsating dc signal. There are two types of
rectifiers i.e. half wave rectifier and full wave rectifier. Full wave rectifiers are categorized into two types i.e.
centre tapped and bridge rectifier.

1. HALF WAVE RECTIFIER:

In half wave rectifier, during the positive half cycle of the input voltage the diode is forward biased.
At that time the diode act as closed switch. So current flows through the load resistor. So the output voltage
is present in the positive half of the input voltage. During the negative half cycle of the input voltage the
diode is reverse biased. So diode acts as open switch, so no current flows through the load resistor. At that
time output voltage is zero. So in the half wave rectifier only one half of the input is available in the output
terminal.

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2. FULL WAVE RECTIFIER [BRIDGE RECTIFIER]:

In full wave rectifier, during the positive half cycle of the input voltage the diode D1 is forward
biased and diode D2 is reverse biased. At that time the diode D1 act as closed switch. So current flows
through the load resistor. So the output voltage is present in the positive half of the input voltage. During the
negative half cycle of the input voltage the diode D1 is reverse biased and diode D2 is forward biased. So
diode D1 acts as open switch and diode D2 act as closed switch, so current flows through the load resistor.
at that time output voltage is negative half cycle of the input voltage. So in the full wave rectifier both
positive and negative half of the input is available in the output terminal.

IDEAL CURVE:
Half Wave Rectifier:

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Full Wave

Rectifier:

PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Give the AC supply from the function generator.

3. Take the output across the load resistor and record it. Then Take the output across the capacitor and record it.

4. Take the input and output trace by the help of CRO.

5. Measure the RMS and average value from the output with the help of multimeter.

OBSERVATION:
TABULATION:

Half Wave Rectifier Full Wave Rectifier

Vm

VRMS

Vavg
Ripple Factor

CONCLUSION:

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TEST YOUR SELF

1. What is Ripple factor?
2. What is the efficiency of HWR and FWR?
3. What is use of filter in rectifier?
4. Can clipper be a HWR, justify it?
5. What is the mathematical relationship between rms input ac voltage and DC output voltage in
HWR?
6. What is the difference in DC output voltage in HWR and FWR rectifier for the same AC input?
7. What is the mathematical expression for ripple factor in FW bridge rectifier?

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EXPERIMENT: 05
AIM OF THE EXPERIMENT:
1. To study the V-I characteristics of a n-p-n transistor, DC biasing the transistor in common emitter
configuration.
2. Determination of its operating point.

APPARATUS REQUIRED:
a. To setup:

SL. NAME OF THE EQUIPMENT SPECIFICATION QUANTITY

NO.
1 Voltmeter 0 to 1V 1
2 Ammeter 0 to 50 mA 1
3 Multimeter ODM-200 1
a. Designing Components:

SL. NAME OF THE EQUIPMENT SPECIFICATION QUANTITY

NO.
1 BJT AC 187 1no.
2 Resistor 100kΩ 2nos.
3 Supply voltage 0 to 30V 1
4 Patching Wire PVC Coated 3

THEORY:
The most frequently used configuration is common-emitter configuration using N-P-N transistor
given below in the figure. It is called the common-emitter configuration since the emitter terminal is
common for both the input and output.
The V-I characteristics of transistor is mainly divided into two parts, such are input characteristics
and output characteristics.
IE=IC+IB
IC=β IB + (1+β)ICBO
INPUT CHARACTERISTICS:
It is the curve between base current versus base emitter voltage at constant collector emitter
voltage .
OUTPUT CHARACTERISTICS:

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It is the curve between collector current versus collector emitter voltage at constant base
current . The value of collector current can be achieved by the equation IC=β IB + (1+β)ICBO

CIRCUIT DIAGRAM:

PROCEDURE:
Input Characteristics:

1. Connect circuit as shown in the circuit diagram for input characteristics.

2. Connect variable power supply 0-30V a t base circuit and collector circuit.
3. Keep Vcc fix a t 0V (Or do not connect Vcc)
4. Increase VBB from 0V to 20V, note down readings of base current and base to emitter voltage
in the observation table.

5. Repeat above procedure for Vcc = +5V and Vcc = +10V.

6. Draw input characteristics curve. Plot on X axis and on Y axis .

Output Characteristic:

1. Connect circuit as shown in the circuit diagram for output characteristics.

2. Connect variable power supply 0-30V at base circuit and collector circuit.
3. Keep base current fix (Initially 0 )
4. Increase VCC from 0V to 30V, note down readings of collector current Ic and collector to emitter
voltage Vce in the observation table.

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5. Repeat above procedure for base currents = 5μA, 50 μA, 1 00 μA. Increase base current by
increasing VBB.
6. Draw output characteristics curve. Plot Vce on X axis and Ic on Y axis.

OBSERVATIN
A. Tabulation For Input Characteristic:

VCE VBE IBμA VCE VBE VCE VBE IBμA

IBμA
0.1v 0.1v 0.1v

1volts 2volts 3volts

0.8v
0.8v 0.8v

B. Tabulation For Output Characteristic:

IBμA VCE ICmA IBμA VCE ICmA IBμA VCE ICmA

0.5v 0.5v 0.5v

10μA 20μA 30μA

10v 10v 10v

CONCLUSION:

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TEST YOUR SELF

1. How to check transistor with the help of multimeter?
2. Define current gain of the transistor in CE configuration?
3. Between base, emitter and collector which area is big and why?
4. Between base, emitter and collector which area is small and why?
5. Between base, emitter and collector which is highly doped and why?
6. Between base, emitter and collector which one is lightly doped and why?
7. Why CE configuration is preferred over CB and CC configuration?
8. Write down the mathematical relationship between α and β?
9. Draw the output characteristics of CE configuration?
10. What is active, saturation and cutoff region of a transistor?
11. Define thermal runway and stability factor.

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