456 26000 0 VNB14NV04

VNB14NV04 / VND14NV04
® / VND14NV04-1 / VNP14NV04 / VNS14NV04

“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE RDS(on) Ilim Vclamp

VNB14NV04
3
VND14NV04 1
VND14NV04-1 35 mΩ 12 A 40 V TO-252 (DPAK) SO-8

VNP14NV04
VNS14NV04
3
3 2
2 1
■ LINEAR CURRENT LIMITATION 1
TO-220 TO-251 (IPAK)
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION

D2PAK
■ INTEGRATED CLAMP 3
1
■ LOW CURRENT DRAWN FROM INPUT PIN
ORDER CODES
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PACKAGE TUBE T&R
PIN
D2PAK VNB14NV04 VNB14NV0413TR
■ ESD PROTECTION
TO-252 (DPAK) VND14NV04 VND14NV0413TR
■ DIRECT ACCESS TO THE GATE OF THE TO-251 (IPAK) VND14NV04-1 -
POWER MOSFET (ANALOG DRIVING) TO-220 VNP14NV04 -
■ COMPATIBLE WITH STANDARD POWER SO-8 VNS14NV04 -
MOSFET
DESCRIPTION applications. Built in thermal shutdown, linear
The VNB14NV04, VND14NV04, VND14NV04-1,
current limitation |and overvoltage clamp protect
VNP14NV04, VNS14NV04, are monolithic
the chip in harsh environments.
devices designed in STMicroelectronics VIPower
Fault feedback can be detected by monitoring the
M0-3 Technology, intended for replacement of
voltage at the input pin.
standard Power MOSFETS from DC up to 50KHz
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
1 Control
Linear
Current
Over Limiter
Temperature
3
SOURCE
July 2003 1/29
This datasheet has been downloaded from http://www.digchip.com at this page

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ABSOLUTE MAXIMUM RATING

Value
Symbol Parameter Unit
SO-8 DPAK TO-220 IPAK D2PAK
VDS Drain-source Voltage (VIN=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IIN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 10 Ω
ID Drain Current Internally Limited A
IR Reverse DC Output Current -15 A
VESD1 Electrostatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 16500 V
(R=330Ω, C=150pF)
Ptot Total Dissipation at Tc=25°C 4.6 74 74 74 74 W
Maximum Switching Energy (L=0.4mH;
EMAX 93 93 mJ
RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=18A)
Tj Operating Junction Temperature Internally limited °C
Tc Case Operating Temperature Internally limited °C
Tstg Storage Temperature -55 to 150 °C
CONNECTION DIAGRAM (TOP VIEW)
SO-8 Package (*)
SOURCE 1 8 DRAIN
SOURCE DRAIN
SOURCE DRAIN
INPUT 4 5 DRAIN
(*) For the pins configuration related to DPAK, D2 PAK, IPAK, TO-220 see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
IIN RIN
INPUT
SOURCE
VIN
2/29
1
THERMAL DATA
Value
Symbol Parameter Unit
SO-8 DPAK TO-220 IPAK D2PAK
Rthj-case Thermal Resistance Junction-case MAX 1.7 1.7 1.7 1.7 °C/W
Rthj-lead Thermal Resistance Junction-lead MAX 27 °C/W
Rthj-amb Thermal Resistance Junction-ambient MAX 90 (*) 65 (*) 62 102 52 (*) °C/W
(*) Whenmounted on a standard single-sided FR4 board with 0.5cm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min Typ Max Unit
Drain-source Clamp
VCLAMP VIN=0V; ID=7A 40 45 55 V
Voltage
Drain-source Clamp
VCLTH VIN=0V; ID=2mA 36 V
Threshold Voltage
VINTH Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input
IISS VDS=0V; VIN=5V 100 150 µA
Pin
Input-Source Clamp IIN=1mA 6 6.8 8
VINCL V
Voltage IIN=-1mA -1.0 -0.3
Zero Input Voltage Drain VDS=13V; VIN=0V; Tj=25°C 30
IDSS µA
Current (VIN=0V) VDS=25V; VIN=0V 75
ON
Static Drain-source On VIN=5V; ID=7A; Tj=25°C 35
RDS(on) mΩ
Resistance VIN=5V; ID=7A 70
3/29
1
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC
Forward
gfs (*) VDD=13V; ID=7A 18 S
Transconductance
COSS Output Capacitance VDS=13V; f=1MHz; VIN=0V 400 pF
SWITCHING
td(on) Turn-on Delay Time 80 250 ns
VDD=15V; ID=7A
tr Rise Time 350 1000 ns
Vgen=5V; Rgen=RIN MIN=10Ω
td(off) Turn-off Delay Time 450 1350 ns
(see figure 1)
tf Fall Time 150 500 ns
td(on) Turn-on Delay Time 1.5 4.5 µs
VDD=15V; ID=7A
tr Rise Time 9.7 30.0 µs
Vgen=5V; Rgen=2.2KΩ
td(off) Turn-off Delay Time 9 25.0 µs
(see figure 1)
tf Fall Time 10.2 30.0 µs
VDD=15V; ID=7A
(di/dt)on Turn-on Current Slope 16 A/µs
Vgen=5V; Rgen=RIN MIN=10Ω
VDD=12V; ID =7A; VIN=5V; Igen=2.13mA
Qi Total Input Charge 36.8 nC
(see figure 5)
SOURCE DRAIN DIODE

VSD (*) Forward On Voltage ISD =7A; VIN=0V 0.8 V
trr Reverse Recovery Time ISD=7A; di/dt=40A/µs 300 ns
Qrr Reverse Recovery Charge VDD=30V; L=200µH 0.8 µC
IRRM Reverse Recovery Current (see test circuit, figure 2) 5 A
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Ilim Drain Current Limit VIN=5V; VDS=13V 12 18 24 A
Step Response Current VIN=5V; VDS=13V
tdlim 45 µs
Limit
Overtemperature
Tjsh 150 175 200 °C
Shutdown
Tjrs Overtemperature Reset 135 °C
Igf Fault Sink Current VIN=5V; VDS=13V; Tj=Tjsh 10 15 20 mA
starting Tj=25°C; VDD =24V
Single Pulse
Eas VIN= 5V; Rgen=RIN MIN=10Ω; L=24mH 400 mJ
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/29
2
PROTECTION FEATURES - OVERTEMPERATURE AND SHORT CIRCUIT

During normal operation, the INPUT pin is PROTECTION:
electrically connected to the gate of the internal these are based on sensing the chip temperature
power MOSFET through a low impedance path. and are not dependent on the input voltage. The
The device then behaves like a standard power location of the sensing element on the chip in the
MOSFET and can be used as a switch from DC up power stage area ensures fast, accurate detection
to 50KHz. The only difference from the user’s of the junction temperature. Overtemperature
standpoint is that a small DC current IISS (typ. cutout occurs in the range 150 to 190 °C, a typical
100µA) flows into the INPUT pin in order to supply value being 170 °C. The device is automatically
the internal circuitry. restarted when the chip temperature falls of about
15°C below shut-down temperature.
The device integrates:
- STATUS FEEDBACK:
- OVERVOLTAGE CLAMP PROTECTION:
in the case of an overtemperature fault condition
internally set at 45V, along with the rugged (Tj > Tjsh), the device tries to sink a diagnostic
avalanche characteristics of the Power MOSFET current Igf through the INPUT pin in order to
stage give this device unrivalled ruggedness and indicate fault condition. If driven from a low
energy handling capability. This feature is mainly impedance source, this current may be used in
important when driving inductive loads. order to warn the control circuit of a device
- LINEAR CURRENT LIMITER CIRCUIT: shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
limits the drain current ID to Ilim whatever the the current Igf, the INPUT pin will fall to 0V. This
INPUT pin voltages. When the current limiter is will not however affect the device operation:
active, the device operates in the linear region, so no requirement is put on the current capability
power dissipation may exceed the capability of the of the INPUT pin driver except to be able to
heatsink. Both case and junction temperatures supply the normal operation drive current IISS.
increase, and if this phase lasts long enough,
junction temperature may reach the Additional features of this device are ESD
overtemperature threshold Tjsh. protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/29
Figure 1: Switching Time Test Circuit for Resistive Load
VD
Rgen
Vgen
ID
90%
tr tf
10%
t
td(on)
td(off)
Vgen
Figure 2: Test Circuit for Diode Recovery Times
A A
D
I FAST L=100uH
OMNIFET DIODE
S B
B
25 Ω
D
VDD
Rgen
I
OMNIFET
Vgen
S
8.5 Ω
6/29
Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms
RGEN
VIN
PW
Figure 5: Input Charge Test Circuit
GEN
VIN
ND8003
7/29
Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Vsd (mV) Rds(on) (mohms)
1000 180
950 160
Tj=-40ºC
Vin=0V Vin=2.5V
140
900
120
850
100 Tj=25ºC
800
80
Tj=150ºC
750
60
700
40
650 20
0 2 4 6 8 10 12 14 16 18 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Id (A) Id(A)
Derating Curve Static Drain-Source On resistance Vs. Input

Voltage
Rds(on) (mohms)
80
70
Tj=150ºC
60
50
Id=12A
Id=1A
40 Tj=25ºC
30
Id=12A
Tj=-40ºC
20 Id=1A
Id=12A
Id=1A
10
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
Static Drain-Source On resistance Vs. Input Transconductance

Voltage
Rds(on) (mohms) Gfs (S)
80 24
22
Vds=13V Tj=-40ºC Tj=25ºC
70
20
Id=7A 18
60 Tj=150ºC
16
Tj=150ºC 14
50
12
40 10
8
30
6
Tj=25ºC
4
20
Tj= - 40ºC 2
10 0
3 3.5 4 4.5 5 5.5 6 6.5 0 1 2 3 4 5 6 7 8 9 10 11 12 13
Vin(V) Id(A)
8/29
Static Drain-Source On Resistance Vs. Id Transfer Characteristics
Rds(on) (mohms) Idon (A)

70 18
Tj=25ºC
16
60
Vds=13.5V
Tj=-40ºC
Vin=5V 14
Tj=150ºC
50
12
40 10
8 Tj=150ºC
30
Tj=25ºC
6
20
4
Tj=-40ºC
10 2
0
0
2 2.5 3 3.5 4 4.5 5 5.5
0 1 2 3 4 5 6 7 8 9 10 11 12 13 2.25 2.75 3.25 3.75 4.25 4.75 5.25
Id(A) Vin (V)
Turn On Current Slope Turn On Current Slope
di/dt(A/us) di/dt(A/us)
20 6
5.5
17.5
5 Vin=3.5V
Vin=5V
Vdd=15V
15 Vdd=15V 4.5
Id=7A
Id=7A 4
12.5
3.5
10 3
2.5
7.5
2
5 1.5
1
2.5
0.5
0 0
0 250 500 750 1000 1250 1500 1750 2000 2250 0 250 500 750 1000 1250 1500 1750 2000 2250
Rg(ohm)
Rg(ohm)
Input Voltage Vs. Input Charge Turn off drain source voltage slope
Vin (V) dv/dt(V/us)
8 300
275
7 250 Vin=5V
Vds=12V
Vdd=15V
Id=7A 225
6 Id=7A
200
5 175
150
4
125
3 100
75
2
50
1 25
0
0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
0 5 10 15 20 25 30 35 40 45
Qg (nC) Rg(ohm)
9/29
Turn Off Drain-Source Voltage Slope Capacitance Variations

C(pF)
dv/dt(v/us)
1000
300
275 900
250 Vin=3.5V f=1MHz
Vdd=15V Vin=0V
225 800
Id=7A
200
700
175
150 600
125
500
100
75 400
50
300
25
0
200
0 250 500 750 1000 1250 1500 1750 2000 2250
0 5 10 15 20 25 30 35
Vds(V)
Rg(ohm)
Switching Time Resistive Load Switching Time Resistive Load

t(us) t(ns)
11 1750
tf
10
Vdd=15V tr 1500
9 Id=7A
Vin=5V td(off) Vdd=15V
8 1250 Id=7A
7 Rg=10ohm
6 1000
5
750
4
3
td(off)
500
2 td(on) tr
250
1 tf
0 td(on)
0
0 250 500 750 1000 1250 1500 1750 2000 2250 2500
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm) Vin(V)
Output Characteristics Normalized On Resistance Vs. Temperature
Id (A) Rds(on) (mOhm)

18 4
17
Vin=5V
16 3.5
15 Vin=4V Vin=5V
14 Id=7A
3
13
12
Vin=3V 2.5
11
10
9 2
8
7 1.5
6
5
1
4
3
2 0.5
1
Vin=2V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -50 -25 0 25 50 75 100 125 150 175
Vds (V) Tc (ºC)
10/29
Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature
Temperature
Vinth (V) Ilim (A)
2 40
1.75 35
Vin=5V
Vds=Vin Vds=13V
1.5 30
Id=1mA
1.25 25
1 20
0.75 15
0.5 10
0.25 5
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
Step Response Current Limit
Tdlim(us)
55
52.5
Vin=5V
50
Rg=10ohm
47.5
45
42.5
40
37.5
35
32.5
30
7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
11/29
1
DPAK Maximum turn off current versus load inductance
ILMAX (A)
100
A
10
B
C
1
0.01 0.1 1 10
L(mH )
A = Single Pulse at TJstart=150ºC

B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
12/29
D2PAK Maximum turn off current versus load inductance
ILMAX (A)
100
B
C
10
1
0.01 0.1 1 10 100
L(mH)
A = Single Pulse at TJstart=150ºC

B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
13/29
DPAK THERMAL DATA
DPAK PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).
Rthj-amb Vs PCB copper area in open box free air condition
RTH j_amb (ºC/W)
90
80
70
60
50
40
30
0 2 4 6 8 10
PCB CU heatsink area (cm^2)
14/29
SO-8 THERMAL DATA
SO-8 PC Board
Cu thickness=35µm, Copper areas: 0.14cm2, 0.6cm2, 1.6cm2).
SO-8 at 4 pins connected to TAB

RTHj_amb
(ºC/W)
110
105
100
95
90
85
80
75
70
0 0.5 1 1.5 2 2.5
PCB CU heatsink area (cm^2)
15/29
D2PAK THERMAL DATA
D2PAK PC Board
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).
RTHj_amb (°C/W)
55
Tj-Tamb=50°C
50
45
40
35
30
0 2 4 6 8 10
PCB Cu heatsink area (cm^2)
16/29
DPAK Thermal Impedance Junction Ambient Single Pulse
ZT H (°C/W)
1000
100 Footprint
6 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Thermal fitting model of an OMNIFET II in Pulse calculation formula

DPAK
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where δ = tp ⁄ T
Thermal Parameter
Area/island (cm2) Footprint 6
R1 (°C/W) 0.1
Tj R2 (°C/W) 0.35
C1 C2 C3 C4 C5 C6
R3 ( °C/W) 1.20
R1 R2 R3 R4 R5 R6 R4 (°C/W) 2
R5 (°C/W) 15
Pd
R6 (°C/W) 61 24
T_amb C1 (W.s/°C) 0.0006
C2 (W.s/°C) 0.0021
C3 (W.s/°C) 0.05
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.45
C6 (W.s/°C) 0.8 5
17/29
D2PAK Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
Footprint
6 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Thermal fitting model of an OMNIFET II in Pulse calculation formula

D2PAK
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where δ = tp ⁄ T
Thermal Parameter
Area/island (cm2) Footprint 6
R1 (°C/W) 0.1
Tj R2 (°C/W) 0.35
C1 C2 C3 C4 C5 C6
R3 ( °C/W) 0.3
R1 R2 R3 R4 R5 R6 R4 (°C/W) 4
R5 (°C/W) 9
Pd
R6 (°C/W) 37 22
T_amb C1 (W.s/°C) 0.0006
C2 (W.s/°C) 2.10E-03
C3 (W.s/°C) 8.00E-02
C4 (W.s/°C) 0.45
C5 (W.s/°C) 2
C6 (W.s/°C) 3 5
18/29
TO-251 (IPAK) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
A3
C2
A1
L2 D L
B3
B6
B5
B
3
=
=
B2
G
E
2
=
=
1
L1
19/29
D2PAK MECHANICAL DATA
mm.
DIM.
MIN. TYP MAX.
A 4.4 4.6
A1 2.49 2.69
A2 0.03 0.23
B 0.7 0.93
B2 1.14 1.7
C 0.45 0.6
C2 1.23 1.36
D 8.95 9.35
D1 8
E 10 10.4
E1 8.5
G 4.88 5.28
L 15 15.85
L2 1.27 1.4
L3 1.4 1.75
M 2.4 3.2
R 0.4
V2 0º 8º
P011P6
20/29
TO-252 (DPAK) MECHANICAL DATA
mm.
DIM.
MIN. TYP MAX.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
B 0.64 0.90
B2 5.20 5.40
C 0.45 0.60
C2 0.48 0.60
D 6.00 6.20
D1 5.1
E 6.40 6.60
E1 4.7
e 2.28
G 4.40 4.60
H 9.35 10.10
L2 0.8
L4 0.60 1.00
R 0.2
V2 0° 8°
Package Weight Gr. 0.29
P032P
21/29
TO-220 MECHANICAL DATA
mm. inch
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
M 2.6 0.102
DIA. 3.75 3.85 0.147 0.151
. '
#
% & /
.
. .
. .

8
KC )
* & *

)

8 (
(
.
22/29
SO-8 MECHANICAL DATA
mm. inch
DIM.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
F 8 (max.)
23/29
D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)
A
16.90 C Base Q.ty 50
Bulk Q.ty 500
Tube length (± 0.5) 532
12.20 5.08 A 6
1.60 B
B 21.3
3.50
C (± 0.1) 0.6
9.75
All dimensions
are in millimeters
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 16
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

End
Start
Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.
User direction of feed
24/29
DPAK FOOTPRINT TUBE SHIPMENT (no suffix)
A
6 .7 1 .8 3 .0 1 .6 C Base Q.ty 75
Bulk Q.ty 3000
2 .3 Tube length (± 0.5) 532
6 .7
A 6
2 .3
B B 21.3
C (± 0.1) 0.6
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4
TAPE DIMENSIONS
Tape width W 16

End
Start

cover
tape 500mm min
25/29
SO-8 TUBE SHIPMENT (no suffix)
B
C Base Q.ty 100
Bulk Q.ty 2000
A A 3.2
B 6
C (± 0.1) 0.6
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
Tape width W 12
All dimensions are in mm. End
Start

cover
tape 500mm min
26/29
TO-220 TUBE SHIPMENT (no suffix)
Base Q.ty 50
Bulk Q.ty 1000
A 5.5
B B 31.4
C (± 0.1) 0.75
27/29
IPAK TUBE SHIPMENT (no suffix)
A
C
Base Q.ty 75
Bulk Q.ty 3000
B A 6
B 21.3
C (± 0.1) 0.6
MECHANICAL POLARIZATION
28/29
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia -
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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VNB14NV04 / VND14NV04

® / VND14NV04-1 / VNP14NV04 / VNS14NV04

TYPE RDS(on) Ilim Vclamp

VND14NV04-1 35 mΩ 12 A 40 V TO-252 (DPAK) SO-8

■ SHORT CIRCUIT PROTECTION

July 2003 1/29

This datasheet has been downloaded from http://www.digchip.com at this page

ABSOLUTE MAXIMUM RATING

CONNECTION DIAGRAM (TOP VIEW)

SO-8 Package (*)

CURRENT AND VOLTAGE CONVENTIONS

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

SOURCE DRAIN DIODE

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%

PROTECTION FEATURES - OVERTEMPERATURE AND SHORT CIRCUIT

Figure 1: Switching Time Test Circuit for Resistive Load

Figure 2: Test Circuit for Diode Recovery Times

Figure 5: Input Charge Test Circuit

Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Derating Curve Static Drain-Source On resistance Vs. Input

Static Drain-Source On resistance Vs. Input Transconductance

Static Drain-Source On Resistance Vs. Id Transfer Characteristics

Rds(on) (mohms) Idon (A)

Turn On Current Slope Turn On Current Slope

Turn Off Drain-Source Voltage Slope Capacitance Variations

Switching Time Resistive Load Switching Time Resistive Load

Output Characteristics Normalized On Resistance Vs. Temperature

Id (A) Rds(on) (mOhm)

Step Response Current Limit

DPAK Maximum turn off current versus load inductance

A = Single Pulse at TJstart=150ºC

D2PAK Maximum turn off current versus load inductance

A = Single Pulse at TJstart=150ºC

DPAK THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

RTH j_amb (ºC/W)

SO-8 THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

SO-8 at 4 pins connected to TAB

D2PAK THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

DPAK Thermal Impedance Junction Ambient Single Pulse

Thermal fitting model of an OMNIFET II in Pulse calculation formula

D2PAK Thermal Impedance Junction Ambient Single Pulse

Thermal fitting model of an OMNIFET II in Pulse calculation formula

TO-251 (IPAK) MECHANICAL DATA

D2PAK MECHANICAL DATA

TO-252 (DPAK) MECHANICAL DATA

TO-220 MECHANICAL DATA

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067