COnduCtoY% hrough Which

s u b s tances
ar
a re
e c
aa | le
ll eoo
can pa 66 ea 6il
ea6i
eleclrici
eucess number
have
ortclucter 3. Tuey awel anco h h
+ree elec hrons owel
LoD ( a lo-
CønolucEiviy

l
resisHviM. A l u m i n i u m ,

o PPe r
u ka
Me t a 3
p
g e o d C o n d u C t o r

are
- O l d , s i i v e r
ete
elechri u ,

@hich
nslato substances 4hvoughave
aYe cal/
Cal
v e cal
can
eagily
noFPa8S
elecici
n 6ulcuer
a u@t ebonite

a a a n PO: -

s s l phur etc
eoneducti
ri
o
Tuy ove ery o
aAU
Z t ' s t i v ih,*
veluo G
OA Ver high

seni cod O subs,tanee u i c h aR

af encmih
good Cowdue to
meituQY
aYR
callRd
Called
insula+OT
nor ood
Semicondu@ O

elemental sem CGuducTo0

p0 Silicon(S
Silicon(St
and
Gie mantum (Ge
 Conductor6, 9 n s
ns tOr3
|adOr

O n t u a
asis o
On
conducBoS

Semi
Cu
O ry bnmd djaga

oudetorS In +ue Ca

conduetton
ha
metels) uttP.
Conductor O Uad.
M
Ytau owe
ei thor bama

T,
CondPau
TctH
I o OVerlap egch
e ach.
elecrGn
bam e
Forbtdden enor D
Nalen ce
6
stoeo
(as-0
ua elechoB
m e e d f o r

Uasmally
fo
A0sma
+O acu re en@ Su
conduction
bdue,
n teo
Pa ssage PaTtia
11Ro
n
elec hou 3 ean Gsi[f Sake
boma
coneluc Hon
in Con ductH
n Proces
part

V
Portially f i l
Cmduco OVeYlaPpi0
Ce
Onlucti o
 An t Q ca 3 e of Imsu|atess|
o valenco baud 13 omp ltel 11ed
Wth electros band
bu Mo eOnducHon ban
wrel tuo bamds
8 compledelyemPtY
are Se Pax@Becl by a Orbidden enor
LeurR
gap Mo Ye 4On Bev

n Order o mak
malko

elechon
Vaanco conducHan bamoo
Inte o
ove
not Possib
which is n0 Tmal

C B:

E3evV

Semionduc fovs

Semi cnduc
tOT8 aR
Vetanco ban a
ull e Valona elechrom
CoMpletely

bt conducHom
bas s empt
1 2 HS
bidden e0T8 a p ts
Tuo or forbidden
For eslampl
e esmanjum w d
eu@r y gap c ad 1ey
0 2 OeK t e m P +
+-
OK 4emP
AA baud D nOt
nO
espectyely

Valgnco bad D ConducHon

in Huo Jumfo tua
elkhrong fe bond
Qvoxsu
ha y e
 to 2

Bom elechos 1ntDa

u t at TOom emp.,
Valanca boe have suffrctent Aorsy
COnduchion bauc,
Over t o 4ua
+o Jump
ehave l k e a Cowdueto
Owe hen o +hO

have negafi ve
semi cgnUcfor8
Coeffrzient-ores
Testatdmco
val temp.9ts esismco e e s e s
With atse inemP

wh does a reB 18tAnco af

metal1ic Cqnducto r . î n r e e s e
hct oF semi condusO
WhileP
deredR t h ase in em perture 2

9n eose of metalie (Ondueror

ear a-
ithse n demP.
eleekon8 d?
evibvation 8ateoMs
Conp t u dincres
a resu-
AS a e s u - t
l ision lechou)
icn
umbey
umbey O iñCraoseg3
als0
With
atoms Or. i on oud o
eMtamu
aud hon Co
inCea3EZ
 Be o semi ouductOb
t n temp. wmo e ad MOe eechrons
Valanco boamd gatuor suffrient
ondueHton

eno Fo Jump overte 4a

efrienCy
-eav tu behtn
ValoncQ b ana
eechons in t e
A defrienu oelecron. wd moeR
MDe
On hole Tus Pair3 -Odue
elecronCMe ho lo
i c h a c t 3 . O . Cuara
semiconductO
eage2
Wit se n t e m p . 4 u O -

e semi ucstON

Semi conaluctor

Intmnsic
s e m i canductom Etoin 8ic
semicauductonr

P +Pe
ntuPe
Semicuduc
Semicoguduc
 Sem Coudue fos

wms Snin bic sem couducto TU9-seMt caucuc

owd+TRe trom
whieh is eompletel Pure Entnstc
eetleo

gemi ouduetor, ue number densi

e e c hron g is equal tD nO
Densi ho les
C.

Eerinsic semicouciuct6T
-

C n o u c t O T
Ohich is mo+ Pure
Sem ofes in+e
- * a n m Puri h
E L t r i n s t e S m i <onueiO?
a T
alle A
e2
Pe S m i conducto
his frea eecrans

dansi
holes
holes.
+0 no
euat
ues What va+ua fferences bat een)
n t m sic a E t i n 8 i c semicouductor

ntn8ie i ERtTin2c semicondutor

Sem condyCtOr
The s e ae PurR|O Tue 2e a Tm Pure
c tal o u kovig Cu co tain3
O Tm Puri . m Pui M

Itus e
n this tste nO
wo alensiy
fre elechron 2 densi ap free ekchrang
8 u a l fo n0 8not equal to nO
densty ap ho1eg
senaiy OP holeB
Cni) (T Elecrcal co nduetivitY
is hig
o

(iv
ectri2aal. Y) E c r a l covductxl H
ecductiyit epe s Pon tempP:
ma nly peud 3 asWèil asam OunT
UPon 4empratue

.
ues What lo pt
delitem
AoPi Te
Proce
s s

a e s i r a b l e îm p u r i
addi ou e
PuYesemi
cGnducor

ddPi
addedd_a r e
a d d e d _ a r e

t
Q o be
ureHS esultug
Tu L Pur a t o m g

Cea1ed oPants ExtTn8i

calla
Semi onduetor
Calle

n tyP asd
couductOr 2
semi
P + PR

n p2 semi Coudu ctos

TmpuM R-
he PAnta va lant
ete
Arsenic n t i mo w, PhospLwo
oRaddlae to an inrin sic se
get an exfmn siC
ConoluctOr

canductOr
calle
a n nP Pe
Semi
Rmi Couducte&

antPR semi ons

a}ARA electran8
D en sity hote8
ism0TRhan

naJ o rih chaY3R C

R t min0tuU
frea
iar aYR-Lerma
CayL
CrRatRd holRS
P+Pe sRmi son duCtOT-

Whan tivalu tmpuri y t1

9mdtum
9)Gailum (Ga, AT minium
H), oran D e +e 13 d e a
Cntrins i c semiconduct6T
2trinsie semic o n s u e t O I
We 8e+ am

Cea|lad P +Pe Semi c o n d u c t e

9 4us pR O semi C o n u C O T ,
Chor carieY
ma0 nOri cuag-
nole3 O
ecrah 8
C a m e rB ave

Ho 1 Lntrin zic semicomduisr

eoductor R{
COnteres ntO n type semi

P
 s com o

C t n sie sewai canductor LRe

CondludoY
be cOnver ted i n oD £x frina ie semi
Cmpurl y
like plou
Wha eavalan
ufsPeutava
addedA to t 1n S
puri ha Selee ran s
Vaunce
elec rons
<lEC ron
Valanco hell Four c o n t b u e

fourCo-va laut 6mO

tO o silrcon
Wth ou'neighbouriU 1 e c h r o n S

atom T becomes
e
oPhovou8
thus
FifthIechsu

4o do T 1eNel
rete 2 uer
ceup
as
1te8 TUST hrch
eoOY
Level
Conduc tionbamo u
belo a ua onetuctton baud
bauc
Onductn

ap ba oRAY
nsr iB Ve Smmatl
at
con6 Leve
+uo f
:+ho reo
freo
au Om e p
em P
even F r oo non Leve ump
so,

electr aus tton b o e

bonno
Couduc bond
tuo hen i{e
a g i t a t t o n

become e a
tormal
bound e1eCrau e
nuber +uQ

9n+hi
s Case
C Y e a t e d
, -a
ODDr
Tu
nub

alon0Y
'alOnor electrons
elecons

f
fr e e
electan
ectran3 3 4@moul
caYrie) reqhamay
ave R_
Carier 5 R
hy
charg
Charak Rated h0
minOYi
.0
0