CEP80N15/CEB80N15

CEF80N15
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP80N15 150V 19mΩ 76A 10V
CEB80N15 150V 19mΩ 76A 10V
CEF80N15 150V 19mΩ 76A d 10V

Super high dense cell design for extremely low RDS(ON).

D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 & TO-220F full-pak for through hole.

D G

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous @ TC = 25 C 76 76 d
A
ID
@ TC = 100 C 55 55 d A
Drain Current-Pulsed a IDM e 304 304 d A
Maximum Power Dissipation @ TC = 25 C 300 68 W
PD
- Derate above 25 C 2 0.5 W/ C
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 0.5 2.2 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W

This is preliminary information on a new product in development now . Rev 1. 2012.Mar.

Details are subject to change without notice . http://www.cetsemi.com
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 CEP80N15/CEB80N15
CEF80N15
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 150 V
Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 35A 14 19 mΩ
On-Resistance
Dynamic Characteristics c
Input Capacitance Ciss 8540 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 800KHz 455 pF
Reverse Transfer Capacitance Crss 365 pF
Switching Characteristics c
Turn-On Delay Time td(on) 45 90 ns
Turn-On Rise Time tr VDD = 76V, ID = 38A, 24 48 ns
VGS = 10V, RGEN = 5Ω
Turn-Off Delay Time td(off) 193 386 ns
Turn-Off Fall Time tf 33 66 ns
Total Gate Charge Qg 262 340 nC
VDS = 76V, ID = 38A,
Gate-Source Charge Qgs VGS = 10V 53 nC
Gate-Drain Charge Qgd 83 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS f 76 A
Drain-Source Diode Forward Voltage b
VSD VGS = 0V, IS = 76A g 1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package IS(max) = 37A .
g.Full package VSD test condition IS = 37A .

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 CEP80N15/CEB80N15
CEF80N15
60 100
TJ=125 C -55 C
VGS=10,9,8,6V
50
80

ID, Drain Current (A)

ID, Drain Current (A)

40
60
VGS=5V
30
40
20

10 20
25 C

0 0
0 1 2 3 4 5 0 2 4 6 8 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

9000 3.0
ID=35A
RDS(ON), On-Resistance(Ohms)

Ciss VGS=10V
7500 2.5
C, Capacitance (pF)

RDS(ON), Normalized

6000 2.0

4500 1.5

3000 1.0

1500 Coss 0.5

Crss
0 0.0
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2
2
1.1 10
VTH, Normalized

1.0

0.9
1
10
0.8

0.7

0
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEP80N15/CEB80N15
CEF80N15
3
10 V =75V 10
-VGS, Gate to Source Voltage (V)

DS RDS(ON)Limit
ID=38A
8

-ID, Drain Current (A)

2 100ms
10
6
1ms
10ms
4
1 DC
10

2 TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 1 2 3
0 66 132 198 264 10 10 10 10

Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN
90% 90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

0
Transient Thermal Impedance

10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
t1
0.05 t2
0.02
1. RθJC (t)=r (t) * RθJC
0.01
2. RθJC=See Datasheet
Single Pulse 3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-1 0 1 2 3 4
-2 10 10 10 10 10 10
10
Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve