IKW75N65EH5

Highspeedseriesfifthgeneration

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated
RAPID1fastandsoftantiparalleldiode

FeaturesandBenefits: C

HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage G
•LowgatechargeQG E
•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel
diode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•Uninterruptiblepowersupplies
•Solarconverters
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters 1
2
Packagepindefinition: 3

•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW75N65EH5 650V 75A 1.65V 175°C K75EEH5 PG-TO247-3

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2

www.infineon.com 2017-07-27
IKW75N65EH5

Highspeedseriesfifthgeneration

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Datasheet 2 V2.2
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IKW75N65EH5

Highspeedseriesfifthgeneration

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IC 90.0 A
TC=100°C 75.0
Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 300.0 A
Turn off safe operating area
- 300.0 A
VCE≤650V,Tvj≤175°C,tp=1µs1)
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IF 90.0 A
TC=100°C 75.0
Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 300.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±30
PowerdissipationTC=25°C 395.0
Ptot W
PowerdissipationTC=100°C 198.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw, PG-TO247-pin123
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-C) - - 0.38 K/W
junction - case
Diode thermal resistance,
Rth(j-C) - - 0.45 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

1)
Defined by design. Not subject to production test.
Datasheet 3 V2.2
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Highspeedseriesfifthgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=75.0A
Tvj=25°C - 1.65 2.10
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.85 -
Tvj=175°C - 1.95 -
VGE=0V,IF=75.0A
Tvj=25°C - 1.35 1.70
Diode forward voltage VF V
Tvj=125°C - 1.33 -
Tvj=175°C - 1.30 -
Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - 1 75 µA
Tvj=175°C - 3000 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=75.0A - 104.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 4200 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 130 - pF
Reverse transfer capacitance Cres - 17 -
VCC=520V,IC=75.0A,
Gate charge QG - 160.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 28 - ns
Rise time tr VCC=400V,IC=75.0A, - 33 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=8.0Ω,RG(off)=8.0Ω, - 174 - ns
Fall time tf Lσ=30nH,Cσ=25pF - 41 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 2.30 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.90 - mJ
Total switching energy Ets - 3.20 - mJ

Datasheet 4 V2.2
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Highspeedseriesfifthgeneration

Turn-on delay time td(on) Tvj=25°C, - 25 - ns

Rise time tr VCC=400V,IC=37.5A, - 14 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=8.0Ω,RG(off)=8.0Ω, - 178 - ns
Fall time tf Lσ=30nH,Cσ=20pF - 15 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.90 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.30 - mJ
Total switching energy Ets - 1.20 - mJ

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 92 - ns
Diode reverse recovery charge Qrr VR=400V, - 1.33 - µC
IF=75.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs, - 20.5 - A
Diode peak rate of fall of reverse Lσ=30nH,
dirr/dt Cσ=25pF - -600 - A/µs
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=25°C, - 59 - ns

Diode reverse recovery charge Qrr VR=400V, - 1.00 - µC
IF=37.5A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs, - 25.8 - A
Diode peak rate of fall of reverse Lσ=30nH,
dirr/dt Cσ=25pF - -1750 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) Tvj=150°C, - 27 - ns
Rise time tr VCC=400V,IC=75.0A, - 34 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=8.0Ω,RG(off)=8.0Ω, - 194 - ns
Fall time tf Lσ=30nH,Cσ=25pF - 38 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 3.00 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.00 - mJ
Total switching energy Ets - 4.00 - mJ

Turn-on delay time td(on) Tvj=150°C, - 25 - ns

Rise time tr VCC=400V,IC=37.5A, - 16 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=8.0Ω,RG(off)=8.0Ω, - 207 - ns
Fall time tf Lσ=30nH,Cσ=20pF - 18 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.80 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.40 - mJ
Total switching energy Ets - 2.20 - mJ

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Highspeedseriesfifthgeneration

DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr Tvj=150°C, - 123 - ns
Diode reverse recovery charge Qrr VR=400V, - 3.70 - µC
IF=75.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs, - 43.8 - A
Diode peak rate of fall of reverse Lσ=30nH,
dirr/dt Cσ=25pF - -2000 - A/µs
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=150°C, - 108 - ns

Diode reverse recovery charge Qrr VR=400V, - 2.70 - µC
IF=37.5A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs, - 38.7 - A
Diode peak rate of fall of reverse Lσ=30nH,
dirr/dt Cσ=25pF - -1050 - A/µs
recoverycurrentduringtb

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IKW75N65EH5

Highspeedseriesfifthgeneration

400

350
100

300
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
250

10
200

150

1
100

50

not for linear use

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, temperature
ICmaxdefinedbydesign-notsubjectto (Tvj≤175°C)
production test)

100 300
VGE = 20V

90 270 18V

15V
80 240
12V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

70 210
10V

60 180 8V

7V
50 150
6V

40 120 4V

30 90

20 60

10 30

0 0
25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,CASETEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tvj=25°C)
(VGE≥15V,Tvj≤175°C)

Datasheet 7 V2.2
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Highspeedseriesfifthgeneration

300 300
VGE = 19V Tvj = 25°C
Tvj = 150°C
270 17V 270

15V
240 240
12V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
210 210
10V

180 7V 180
7V
150 150
6V

120 5V 120

90 90

60 60

30 30

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 4 5 6 7 8 9 10
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tvj=150°C) (VCE=20V)

3.5 1000
IC = 37.5A
IC = 75A
IC = 150A
VCEsat,COLLECTOR-EMITTERSATURATION[V]

3.0
t,SWITCHINGTIMES[ns]

2.5 100

2.0

1.5 10

1.0
td(off)
tf
td(on)
tr
0.5 1
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic
test circuit in Figure E)
Datasheet 8 V2.2
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Highspeedseriesfifthgeneration

1000
td(off)
tf
td(on)
1000 tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100

100

10

td(off)
tf
td(on)
tr
10 1
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
RG,GATERESISTANCE[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistance junctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=0/15V,
VGE=0/15V,IC=75A,dynamictestcircuitin IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
Figure E) circuit in Figure E)

6.0 20
typ. Eoff
min. Eon
5.5 18
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max. Ets

5.0 16
E,SWITCHINGENERGYLOSSES[mJ]

4.5 14

4.0 12

3.5 10

3.0 8

2.5 6

2.0 4

1.5 2

1.0 0
25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 225
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.75mA) (inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic
test circuit in Figure E)
Datasheet 9 V2.2
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Highspeedseriesfifthgeneration

14 5.0
Eoff Eoff
Eon Eon
Ets 4.5 Ets
12
4.0
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
10 3.5

3.0
8

2.5

6
2.0

4 1.5

1.0
2
0.5

0 0.0
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
RG,GATERESISTANCE[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistance functionofjunctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=0/15V,
VGE=0/15V,IC=75A,dynamictestcircuitin IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
Figure E) circuit in Figure E)

5.5 16
Eoff VCE = 130V
5.0 Eon VCE = 520V
Ets 14
4.5
E,SWITCHINGENERGYLOSSES[mJ]

VGE,GATE-EMITTERVOLTAGE[V]

12
4.0

3.5 10

3.0
8
2.5

2.0 6

1.5
4

1.0
2
0.5

0.0 0
200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180
VCE,COLLECTOR-EMITTERVOLTAGE[V] QG,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=75A)
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
circuit in Figure E)
Datasheet 10 V2.2
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Highspeedseriesfifthgeneration

Cies
1E+4 Coes
Cres

Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
D = 0.5
0.1 0.2
0.1
C,CAPACITANCE[pF]

0.05
1000
0.02
0.01
single pulse

0.01

100

i: 1 2 3 4 5 6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237

10 0.001
0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1
VCE,COLLECTOR-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. IGBTtransientthermalimpedance
collector-emittervoltage (D=tp/T)
(VGE=0V,f=1MHz)

200
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
180
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

160
D = 0.5
trr,REVERSERECOVERYTIME[ns]

0.1 0.2
140
0.1
0.05
120
0.02
0.01
100
single pulse

80
0.01
60

40

i: 1 2 3 4 5 6 7
20
ri[K/W]: 3.1E-4 0.014345 0.094354 0.098809 0.228276 0.019674 2.0E-3
τi[s]: 5.0E-6 2.7E-5 2.2E-4 2.2E-3 0.012472 0.102908 1.856405

0.001 0
1E-6 1E-5 1E-4 0.001 0.01 0.1 500 700 900 1100 1300 1500
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa Figure 20. Typicalreverserecoverytimeasafunction
functionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=400V)

Datasheet 11 V2.2
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Highspeedseriesfifthgeneration

5.0 90
Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A Tvj = 150°C, IF = 75A
4.5 80
Qrr,REVERSERECOVERYCHARGE[µC]

Irr,REVERSERECOVERYCURRENT[A]
4.0
70

3.5
60

3.0
50
2.5
40
2.0

30
1.5

20
1.0

0.5 10

0.0 0
500 700 900 1100 1300 1500 500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

0 150
Tvj = 25°C
140
-500 Tvj = 150°C
130
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]

-1000
120
-1500
110
IF,FORWARDCURRENT[A]

-2000 100

90
-2500
80
-3000
70
-3500
60

-4000 50

40
-4500
30
-5000 Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A 20
-5500
10

-6000 0
500 700 900 1100 1300 1500 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
diF/dt,DIODECURRENTSLOPE[A/µs] VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse Figure 24. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=400V)
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Highspeedseriesfifthgeneration

2.50
IF = 35A
IF = 75A
2.25 IF = 150A

2.00
VF,FORWARDVOLTAGE[V]

1.75

1.50

1.25

1.00

0.75

0.50
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature

Datasheet 13 V2.2
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IKW75N65EH5

Highspeedseriesfifthgeneration

Package Drawing PG-TO247-3

Datasheet 14 V2.2
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Highspeedseriesfifthgeneration

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 15 V2.2
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Highspeedseriesfifthgeneration

RevisionHistory
IKW75N65EH5

Revision:2017-07-27,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2015-05-20 Final data sheet
2.2 2017-07-27 Correction Fig.1

Datasheet 16 V2.2
2017-07-27
Trademarks

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2017.
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