SUD23N06-31L

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N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V) RDS(on) (Ω) Id (A) a
• 175 °C junction temperature
0.031 at VGS = 10 V 23
60 • Material categorization: for definitions of
0.045 at VGS = 4.5 V 19.5
compliance please see www.vishay.com/doc?99912

TO-252 D

Drain c
connected to tab

S
D
G
Top View S

Ordering Information: N-Channel MOSFET

SUD23N06-31L-E3 (lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 23
Continuous Drain Current (TJ = 175 °C) b ID
TC = 100 °C 16.5
Pulsed Drain Current IDM 50 A
Continuous Source Current (Diode Conduction) IS 23
Avalanche Current IAS 20
Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ
TC = 25 °C 37.5
Maximum Power Dissipation PD W
TA = 25 °C 3a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t ≤ 10 s 18 22
Maximum Junction-to-Ambient a RthJA
Steady State 40 50 °C/W
Maximum Junction-to-Case RthJC 3.2 4

Note
a. Surface mounted on 1" x 1" FR4 board.

S14-2451-Rev. D, 15-Dec-14 1 Document Number: 72145

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. a MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1 2 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VDS = 60 V, VGS = 0 V - - 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C - - 50 μA
VDS = 60 V, VGS = 0 V, TJ = 175 °C - - 250
On-State Drain Current b ID(on) VDS = 5 V, VGS = 10 V 50 - - A
VGS = 10 V, ID = 15 A - 0.025 0.031
VGS = 10 V, ID = 15 A, TJ = 125 °C - - 0.055
Drain-Source On-State Resistance b RDS(on) Ω
VGS = 10 V, ID = 15 A, TJ = 175 °C - - 0.069
VGS = 4.5 V, ID = 10 A - 0.037 0.045
Forward Transconductance b gfs VDS = 15 V, ID = 15 A - 20 - S
Dynamic a
Input Capacitance Ciss - 670 -
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz - 140 - pF
Reverse Transfer Capacitance Crss - 60 -
Total Gate Charge c Qg - 11 17
Gate-Source Charge c Qgs VDS = 30 V, VGS = 10 V, ID = 23 A - 3 - nC
Gate-Drain Charge c Qgd - 3 -
Turn-On Delay Time c td(on) - 8 15
Rise Time c tr VDD = 30 V, RL = 1.3 Ω - 15 25
ns
Turn-Off Delay Time c td(off) ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω - 30 45
Fall Time c tf - 25 40
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current ISM - - 50 A
Diode Forward Voltage VSD IF = 15 A, VGS = 0 V - 1 1.5 V
Reverse Recovery Time trr IF = 15 A, dI/dt = 100 A/μs - 30 60 ns
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S14-2451-Rev. D, 15-Dec-14 2 Document Number: 72145

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 50
VGS = 10 thru 6 V
5V
40 40

I D - Drain Current (A)

I D - Drain Current (A)

30 30

20 20
4V

10 10 TC = 125 °C

25 °C
3V - 55 °C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

32 0.10

TC = - 55 °C
25 °C 0.08
g fs - Transconductance (S)

24
125 °C
0.06

16
VGS = 4.5 V
0.04
R DS(on) -

VGS = 10 V

8
0.02

0 0.00
0 5 10 15 20 25 0 1 2 3 4 5
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

1000 10

VDS = 30 V
VGS - Gate-to-Source Voltage (V)

800 8 ID = 23 A
Ciss
C - Capacitance (pF)

600 6

400 4

200 Coss 2

Crss
0 0
0 10 20 30 40 50 60 0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S14-2451-Rev. D, 15-Dec-14 3 Document Number: 72145

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.5 25
VGS = 10 V
RDS(on) - On-Resistance (Normalized)

ID = 15 A
2.0 20

I D - Drain Current (A)

1.5 15

1.0 10

0.5 5

0.0 0
- 50 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C) TA - Ambient Temperature (°C)

On-Resistance vs. Junction Temperature Maximum Drain Current vs. Ambient Temperature

100 100
Limited by RDS(on)*
10 µs

100 µs
I S - Source Current (A)

I D - Drain Current (A)

10

TJ = 150 °C TJ = 25 °C
10
1 ms

1 10 ms
100 ms
TC = 25 °C DC
Single Pulse

1 0.1
0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V) * VGS > minimum VGS at which R DS(on) is specified

Source-Drain Diode Forward Voltage Safe Operating Area

S14-2451-Rev. D, 15-Dec-14 4 Document Number: 72145

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 SUD23N06-31L
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

0.05
0.02
Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72145.

S14-2451-Rev. D, 15-Dec-14 5 Document Number: 72145

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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 Package Information
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Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E A
C2
b3

L3

D1
D

H
E1
L4
L5

L
gage plane height (0.5 mm)
b b2 C
e
A1
e1

MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
Note
• Dimension L3 is for reference only

Revision: 03-Oct-2022 1 Document Number: 71197

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = N

e
E A
b3
E1
e c2 E1/2

θ
θ

D1
L3
D

H
L6

L5
L4

2x b2
3x b DETAIL "B"
2x e (b)
0.25 C A B

c
(3°) (3°)

c1
H
C b1
GAUGE
PLANE SEATING DETAIL "B"
C C
L PLANE
θ
L2

A1
(L1)

MILLIMETERS MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 2.18 2.39 L 1.50 1.78
A1 - 0.13 L1 2.74 ref.
b 0.65 0.89 L2 0.51 BSC
b1 0.64 0.79 L3 0.89 1.27
b2 0.76 1.13 L4 - 1.02
b3 4.95 5.46 L5 1.14 1.49
c 0.46 0.61 L6 0.65 0.85
c1 0.41 0.56  0° 10°
c2 0.46 0.60 1 0° 15°
D 5.97 6.22 2 25° 35°
D1 5.21 - Notes
E 6.35 6.73 • Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
E1 4.32 -
• Heat sink side flash is max. 0.8 mm
e 2.29 BSC • Radius on terminal is optional
H 9.94 10.34







ECN: E22-0399-Rev. R, 03-Oct-2022

DWG: 5347

Revision: 03-Oct-2022 2 Document Number: 71197

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224
(5.690)

(6.180)
0.243
(10.668)
0.420

(2.202)
0.087
(2.286)
0.090

0.180 0.055
(4.572) (1.397)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72594 www.vishay.com

Revision: 21-Jan-08 3
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Revision: 01-Jan-2023 1 Document Number: 91000