Designing of a Semiconductor Laser

EEE 459: Optoelectronics

Yasir Fatha Abed
Student ID: 1506023
Problem Statement:
Design an AlGaAs-GaAs based heterostructure laser diode assuming following
parameters:
optical cavity length L=223 um.
The peak radiation is at 823 nm
FWHM wavelength width of about 5 nm
Mirror1 reflectance 𝑅1 = 100%
Mirror2 reflectance 𝑅2 = 90%
loss coefficient 𝛾 ≈ 0.04 m-1
spontaneous decay time constant 𝜏s, ≈300 ns
Reflective index, 𝑛 ≈ 3.6

Calculation of threshold gain coefficient:

1 1
𝑔𝑡ℎ = 𝛾 + ln⁡( )
2𝐿 𝑅1 𝑅2

1 1
= 0.04 + ln ( )
2×223×10−6 1×0.90

= 236.274 𝑚−1
Calculation of Threshold population Inversion:
8𝜋𝑛2 𝑣𝑜2 𝜏𝑠𝑝 ∆𝑣
∆𝑁𝑡ℎ = (𝑁2 − 𝑁1 ) = 𝑔𝑡ℎ
𝑐2
8𝜋×3.62 ×(3.645×1014 )2 ×300×10−9 ×2.215×1012
= 236.274 × (3×108 )2

= 7.55 × 1022 𝑚−3

So, minimum 7.55 × 1022 𝑚−3 population inversion is needed for lasing.
Calculation of mode number:
𝜆
𝑚 = 𝐿
2𝑛
2𝑛𝐿 2 × 3.6 × 223 × 10−6
𝑚 = = = 1950.9 = 1950 𝑜𝑟 1951
𝜆 823 × 10−9
The wavelength separation ∆𝜆𝑚 between the adjacent cavity modes m and
(m + 1) is
2𝑛𝐿 2𝑛𝐿 2𝑛𝐿 𝜆2
∆𝜆𝑚 = − ≈ 2 =
𝑀 𝑚+1 𝑚 2𝑛𝐿

(823 × 10−9 )2
∆𝜆𝑚 =
2 × 3.6 × 223 × 10−6
= 0.422 𝑛𝑚
Calculation of number of modes which are exists within this bandwidth
∆𝜆1
2 5 𝑛𝑚
Number of modes within this bandwidth = = = 11.85 ≈ 12
∆𝜆𝑚 0.422𝑛𝑚

So, The number of modes exist within the linewidth assuming a Fabry-Perot cavity
is 12
Taking mirror1 reflectance = 100 % and varying mirror2 reflectance from 10% -
90% gain threshold is plotted. threshold gain is reduced with increasing
reflectivity of a mirror

Taking mirror1 reflectance = 100 % and mirror2 reflectance = 90 % gain threshold

is plotted for different cavity length. Threshold gain is reduced with increasing
cavity length.

For calculating efficiencies, the threshold current is taken as 30 mA at a forward

current of 100 mA and a voltage of 5.6 V, the output power is 80 mW. The
operating wavelength is 823 nm.
The slope efficiency is nslope= Po / (I-Ith) = 1.14 mW mA-1
The external power efficiency nPCE= Po / (IV) = 14.29 %
Energy = hc/ λ = 1.5096 eV
External quantum efficiency nEQE = (Po/ (hc/ λ))/(I/e) = 53 %
External differential quantum efficiency nEDQE = (Po/ (hc/ λ))/((I-Ith)/e) = 75.7 %