This document contains the typical model parameters for an AMI 0.5um NMOS and PMOS transistor model in HSpice. It includes parameters such as threshold voltage, mobility, junction capacitances, saturation velocity, and other factors that define the electrical behavior of the transistors in circuit simulations.
This document contains the typical model parameters for an AMI 0.5um NMOS and PMOS transistor model in HSpice. It includes parameters such as threshold voltage, mobility, junction capacitances, saturation velocity, and other factors that define the electrical behavior of the transistors in circuit simulations.
This document contains the typical model parameters for an AMI 0.5um NMOS and PMOS transistor model in HSpice. It includes parameters such as threshold voltage, mobility, junction capacitances, saturation velocity, and other factors that define the electrical behavior of the transistors in circuit simulations.