In all problems assume:

- the intrinsic carrier concentration of the semiconductor is 1 × 1010 /cc

- The thermal voltage = 𝑘𝑇/𝑞=25 mV
- the magnitude of the charge on the electron is 1.6 × 10−19 C
- electron mobility = 1000 cm2/Vs
- hole mobility = 500 cm2/Vs
- Note that 1 micrometer (um) = 1 × 10−6 m.
- permittivity of vacuum is 8.85 × 10−14 F/cm

SEMICONDUCTOR BASICS
1. A semiconductor with an intrinsic carrier concentration of 1 × 1010 /cc and doped with donor
dopants of concentration of 1 × 1014 /cc. The hole concentration in the semiconductor at
equilibrium is approximately equal to ______________. The value of 𝐸𝑓 − 𝐸𝑖 is closest to
_________eV. The resistivity is _____________ ohm.cm.

2. A semiconductor having an intrinsic carrier concentration of 1 × 1010 /cc is doped with

3 × 1010/cc donor dopants and 1 × 1010/cc acceptor dopants. The electron concentration in the
semiconductor at equilibrium is approximately equal to __________

3. An n-channel MOSFET has a mobility 𝜇 = 1000 cm2/Vs, oxide capacitance per unit area 𝐶𝑜𝑥 =
50 × 10−9 F/cm , aspect ratio (channel width divided by channel length) of 10, threshold voltage
2

𝑉𝑇 = 0.5 V. If the MOSFET has a drain-source voltage, 𝑉𝑑𝑠 = 0.2 V and a gate-source voltage
𝑉𝑔𝑠 = 1.5 V, the current through the MOSFET has a value that is closest to ___________.

4. An n-channel MOSFET has a mobility 𝜇 = 1000 cm2/Vs, oxide capacitance per unit area 𝐶𝑜𝑥 =
50 × 10−9 F/cm2, aspect ratio (channel width divided by channel length) of 10, threshold voltage
𝑉𝑇 = 0.5 V. If the MOSFET has a drain-source voltage, 𝑉𝑑𝑠 = 2.5 V and a gate-source voltage
𝑉𝑔𝑠 = 1.5 V, the drain-source current, 𝐼𝑑𝑠 , through the MOSFET has a value that is closest to
___________. This MOSFET is used to sense a protein whose concentration 𝜑 (in moles) affects
the threshold voltage as 𝑉𝑇 = 0.5 + 𝐴𝜑 where 𝐴 = 0.01 V/mole. The sensitivity of the current
through the MOSFET to the protein concentration i.e. 𝑑𝐼𝐷𝑆 /𝑑𝜑 is ___________

5. A doped semiconductor has a conduction band edge at 𝐸𝑐 and valence band edge at 𝐸𝑣 . Due to
the presence of states in the band-gap, the semiconductor has states in its band-gap located at
energy (𝐸𝑐 + 𝐸𝑣 )/2. At equilibrium, 1 % of these band-gap states are filled with electrons. It is
known that the intrinsic carrier concentration of the semiconductor is 1 × 1010 /cc and that the
effective mass of electrons and holes in the semiconductor is the same. Assuming the Boltzmann
approximation, the electron concentration in the doped semiconductor is approximately
______________
6. A semiconductor is placed in dark and with no applied fields. In this semiconductor there exists, at
some point in time, a linear variation in the electron concentration, 𝑛(𝑥), only in the 𝑥 direction as
shown in the figure. At 𝑥 = 0 um, 𝑛 = 1 × 106/cc whereas at 𝑥 = 10 um, 𝑛 = 1 × 105 /cc. The
magnitude of the current density (in nanoamperes (nA)) per cm2) in this region of the semiconductor
is approximately equal to _________________

7. A p-doped semiconductor with a dopant concentration of 1 × 1016/cc is uniformly bathed in light

resulting in uniform carrier generation with the carrier generation rate being 1 × 1012
/(cc.second). The light is then turned off at time 𝑡 = 0 s and the semiconductor is kept in dark. It
is known that the thermal voltage is exactly 25 mV, the intrinsic carrier concentration of the
semiconductor is 1 × 1010 /cc, the diffusion length of electrons in the semiconductor is
25 × 10−4 cm and the electron mobility is 1000 cm2/Vs. The time taken for the excess electron
concentration in the semiconductor to be 1 × 105 /cc has a value closest to ____________

8. An n-doped semiconductor having Seebeck coefficient,𝑆0 , is subject to a temperature of 𝑇0 on

one end (end A) and 2𝑇0 on the other end (end B). When the ends A and B are short-circuited
with an ideal temperature independent conductor of zero resistance, a current 𝐼0 flows through
the semiconductor. What is the direction of 𝐼0 ? When the ends A and B are open circuited what
is the voltage difference between A and B? What is the approximate value of 𝐸𝑓 − 𝐸𝑖 ?