Electronic Devices

Final Term
Lecture - 07

Reference book:
Electronic Devices and Circuit Theory (Chapter-7)
Robert L. Boylestad and L. Nashelsky , (11th Edition)

Faculty of Engineering
American International University-Bangladesh
 SELF-BIAS EXAMPLE Contd.
• Plot the transfer curve using IDSS and VP using shorthand method:

VGS ID

0 IDSS

0.3VP IDSS/2

0.5VP IDSS/4

VP 0mA

Faculty of Engineering
American International University-Bangladesh
 SELF-BIAS EXAMPLE Contd.
• Superimpose the load line on top of the transfer curve:

Faculty of Engineering
American International University-Bangladesh
 JFET: VOLTAGE-DIVIDER BIAS
• The source VDD was separated into two equivalent sources to permit a further
separation of the input and output regions of the network.
• Since IG = 0A, Kirchoff’s current law requires that IR1= IR2 and the series equivalent
circuit appearing to the left of the figure can be used to find the level of VG.

Faculty of Engineering
American International University-Bangladesh
 VOLTAGE-DIVIDER BIAS
• VG can be found using the voltage divider rule:
RV
VG = 2 DD
R1 + R2
• Using Kirchoff’s Law on the input loop:
VD = VDD − I D RD VDS = VDD − I D ( RD + RS )

VS = I D RS VGS = VG − I D RS

• Rearranging and using ID =IS:

VDD
I R1 = I R 2 =
R1 + R2

• Again the Q point needs to be established by plotting

a line that intersects the transfer curve.

Faculty of Engineering
American International University-Bangladesh
 VOLTAGE-DIVIDER BIAS
• Graphical Approach ( to find VGSQ and IDQ):
• Plot a line for:
» VGS = VG when ID = 0A
» VGS = 0V when ID = VG/RS.
• Plot the transfer curve using IDSS and VP using shorthand method.
• The Q-point is located at the intersection.

VGS ID
0 IDSS
0.3VP IDSS/2 VGS = VG − I D RS
0.5VP IDSS/4
VP 0mA

Faculty of Engineering
American International University-Bangladesh
 EFFECT OF INCREASING VALUES OF RS

Faculty of Engineering
American International University-Bangladesh
 JFET: VOLTAGE-DIVIDER BIAS EXAMPLE
• Determine IDQ, VGSQ, VD, VS, VDS and VDG.

R2VDD
VG = VGS = VG − I D RS
R1 + R2

VDS = VDD − I D ( RD + RS )

VGSQ = −1.8V I DQ = 2.4mA

VD = 10.24V VS = 3.6V

VDS = 6.64V VDG = 8.24V

Faculty of Engineering
American International University-Bangladesh
 VOLTAGE-DIVIDER BIAS EXAMPLE Contd.
• Graphical Approach ( to find VGSQ and IDQ):
• Plot a line for:
» VGS = VG when ID = 0A
» VGS = 0V when ID = VG/RS.
• Plot the transfer curve using IDSS and VP
using shorthand method.
• Identify the Q-point.

VS = I D RS
R2VDD
VG =
R1 + R2
VDS = VDD − I D ( RD + RS )
VGS = VG − I D RS VDS = VD − VS
VD = VDD − I D RD VDG = VD − VG

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET SELF-BIAS
• D-MOSFET bias circuits are similar to
JFETs.

• The only difference is that D-MOSFETs can

operate with positive values of VGS and with
ID values that exceed IDSS.

IG  0A ID = IS

VGS 2
ID = IDSS (1− )
VP

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET SELF-BIAS

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP using

shorthand method.

• Plot ID vs VGS using VGS = -IDRS.

• Take a positive value of VGS and find the ID value

using
VGS 2
ID = IDSS (1− )
VP

• The Q-point is located at the intersection.

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET SELF-BIAS EXAMPLE

• Determine the IDQ, VGSQ and VD.

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP

using shorthand method.

• Take a positive value of VGS and find the ID

value using
VGS 2
ID = IDSS (1− )
VP

• Plot ID vs VGS using VGS = -IDRS.

• Identify the intersection Q-point.

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET SELF-BIAS EXAMPLE

VD = VDD − I D RD ID = IDSS (1−

VGS 2
)
VP
VGSQ = -4.3 V

IDQ = 1.7 mA
VGS
ID = −
VD = 9.46 V RS

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET VOLTAGE-DIVIDER BIAS

• D-MOSFET bias circuits are similar to JFETs.

IG  0A ID = IS

VGS 2
ID = IDSS (1− )
VP

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET VOLTAGE-DIVIDER BIAS

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP using

shorthand method.

• Take a positive value of VGS and find the ID

value using
VGS 2
ID = IDSS (1− )
VP

• Plot ID vs VGS using VGS = VG - IDRS.

• The Q-point is located at the intersection.

Faculty of Engineering
American International University-Bangladesh
 End of
Lecture-7

Faculty of Engineering
American International University-Bangladesh