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FDN340P 103694
FDN340P 103694
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FDN340P
September 200
February 2007
FDN340P
Single P-Channel , PowerTrench MOSFET
, Logic Level
GeneralDescription Features
This P-Channel Logi c Level MOSFET i s produced • –2A,20 V RDS(ON)= 70 mΩ @ V GS = –4.5 V
using Fai
rchild Semi conductor advanced Power Trench
process that has been especi ally tai
lored to mi
nimize RDS(ON)= 110 mΩ @ V GS = –2.5 V
the on-state resistance and yet mai ntai
n low gate
charge for superior switchi
ng performance. • Low gate charge (7.2 nC typi
cal).
D
G S
Therm alCharacteristics
RθJA Thermal Resi
stance,Juncti
on-to-Ambi
ent (Note 1a) 250 °C/
W
RθJ C Thermal Resi
stance,Juncti
on-to-Case (Note 1) 75 °C/
W
2007 Fai
rchi
ld Semi
conductor Corporati
on FDN340P Rev E1
FDN340P
Electrical Characteristics TA = 25°C unless otherwise noted
Off Characteristics
BV DSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA –20 V
∆BV DSS Breakdown Voltage Temperature
ID = –250 µA,Referenced to 25°C –12 mV/°C
∆TJ Coefficient
V DS = –16 V, V GS = 0 V –1 µA
IDSS Zero Gate Voltage Drain Current
V DS = –16 V, V GS = 0 V,TJ =55°C –10
IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA –0.4 –0.8 –1.5 V
∆V GS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C
3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source V GS = –4.5 V, ID = –2 A 60 70 mΩ
On–Resistance 77 120
V GS = –4.5 V, ID = –2 A,TJ =125°C
V GS = –2.5 V, ID = –1.7A, 82 110
ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V –5 A
gFS Forward Transconductance V DS = –4.5 V, ID = –2 A 9 S
Dynamic Characteristics
600 Input Capacitance V DS = –10 V, V GS = 0 V, 779 pF
175 Output Capacitance f = 1.0 MHz 121 pF
80 Reverse Transfer Capacitance 56 pF
2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDN340P Rev E1
FDN340P
Typical Characteristics
15
V GS = -4.5V 2
-3.0V
-3.5V -2.5V
DRAIN-SOURCE ON-RESISTANCE
12 V 1.8 V GS=-2.0V
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
9 1.6
-2.0V
1.4 -2.5V
6
-3.0V
1.2
-3.5V
3 -4.5V
-1.5V 1
0 0.8
0 1 2 3 4
0 3 6 9 12 15
-VDS , DRAIN TO SOURCE VOLTAGE (V) -ID , DRAIN CURRENT (A)
1.4 0.22
ID = -2A ID = -1A
DRAIN-SOURCE ON-RESISTANCE
1.3
V GS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
0.18
RDS(ON), NORMALIZED
1.2
0.14
1.1
TA = 125o C
1
0.1
TA = 25 oC
0.9
0.06
0.8
0.7 0.02
-50 -25 0 25 50 75 100 125 150 1 2 3 4 5
T J, JUNCTION TEMPERATURE ( oC) -VGS, GATE TO SOURCE VOLTAGE (V)
10
10
V DS = -5V V GS = 0V
T A = -55oC 25o C
-IS , REVERSE DRAIN CURRENT (A)
8
1
-ID, DRAIN CURRENT (A)
125oC
T A = 125o C
6
0.1
4 25oC
0.01
-55 o C
2
0.001
0
0.0001
0.5 1 1.5 2 2.5
0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD , BODY DIODE FORW ARD VOLTAGE (V)
FDN340P Rev E1
FDN340P
Typical Characteristics
5 1000
ID = -3.5A V DS = -5V f = 1 MHz
-10V V GS = 0 V
-V GS, GATE-SOURCE VOLTAGE (V)
CISS
4 800
-15V
CAPACITANCE (pF)
3 600
2 400
COSS
1 200
CRSS
0 0
0 1 2 3 4 5 6 7 8 9 0 5 10 15 20
Q g, GATE CHARGE (nC) -V DS , DRAIN TO SOURCE VOLTAGE (V)
100 50
SINGLE PULSE
40
R DS(ON) LIMIT 100 µs RθJA = 270° C/W
10
-ID , DRAIN CURRENT (A)
1ms TA = 25°C
10ms
POWER (W)
30
100ms
1 1s
DC 20
V GS = -10V
SINGLE PULSE
0.1
RθJA = 270 oC/W
10
T A = 25o C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100
SINGLE PULSE TIME (SEC)
-V D S, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.2 R θ JA (t) = r(t) * Rθ JA
0.1 R θJA = 270 °C/W
0.1
0.05
0.05
0.02 P(pk)
0.02 0.01
t1
0.01 Single Pulse
t2
0.005 TJ - T A = P *R θ JA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)
FDN340P Rev E1
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A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS
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W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS .
L IF E SU P P O RT P O L IC Y
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W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N .
A s used herein:
1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s 2. A c ritic al c om p onent is any c om p onent of a life sup p ort
whic h, (a) are intended for surgic al im p lant into the b ody , or dev ic e or sy stem whose failure to p erform c an b e
(b ) sup p ort or sustain life, or (c ) whose failure to p erform reasonab ly ex p ec ted to c ause the failure of the life sup p ort
when p rop erly used in ac c ordanc e with instruc tions for use dev ic e or sy stem , or to affec t its safety or effec tiv eness.
p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to
result in signific ant injury to the user.
P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and
sup p lem entary data will b e p ub lished at a later date.
F airc hild S em ic onduc tor reserv es the right to m ak e
c hanges at any tim e without notic e in order to im p rov e
design.
N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild
S em ic onduc tor reserv es the right to m ak e c hanges at
any tim e without notic e in order to im p rov e design.
Authorized Distributor
Fairchild Semiconductor:
FDN340P_F095