CHAPTER 3

MODLELLING AND SIMULATION RESULT

3.1 THICKNESS OPTIMISATION
There is a influences on overall performance by the thickness of each layer of
perovskite solar cell .therefore the thickness of each layer should be optimized to
get maximum efficiency .

FTO TiO2 MAPbI3 SPRIO Au PCE

50 nm 200 nm 100 nm 200 nm 100 nm 13.

Table 3.1 Initial thickness of the device

3.1.1 ACTIVE LAYER OPTIMISATION

To examine the impact of ABSORBER LAYER on photovoltaic characteristics , the
thickness of electron transport layer and hole transport layer was fixed at 0.1 and
0.5 separately. And thickness of absorber layer vary from

Figure 3.1 Effect of changes in thickness of active layer on characteristic parameter

 Figure 3.2 JV Characteristic of active layer

FTO TiO2 MAPbI3 SPRIO Au PCE

(10nm-500nm)
50 nm 200 nm 240 nm 200 nm 100 nm 16.946%

Table 3.2 Efficiency at Optimised active layer

The above result shows that the efficiency of the device increase with increasing
the thickness of absorber layer.

This can be ascribed to an expansion in electron-hole pair generation due to

greater photon absorption.

PCE reached a maximum value at an

Essentially, the Jsc and FF increase with absorber thickness .This is due to increase
in absorption response of light and in electric field.

3.1.2 ETL OPTIMISATION

The effect of ELECTRON TRANSPORT LAYER thickness on photovoltaic
characteristic was investigated by varying the thickness of ETL from 0.1 to 0.5. In
this case absorber thickness was kept at 0.9 and HTL thickness at 0.5 .

Figure 3.3 Effect of changes in thickness of ETL on characteristic parameter

 Figure 3.4 JV Characteristic of active layer

FTO TiO2 MAPbI3 SPRIO Au PCE

(5nm-300nm)
50 nm 20 nm 240 nm 200 nm 100 nm 18.131%

Table 3.2 Efficiency at Optimised active layer and ETL

On varying the thickness of ETL , the PCE of the device gets decreased on
increasing the thickness . so optimized thickness of ETL is 20 nm .

3.1.3 HOLE TRANSPORT LAYER OPTIMISATION

Now to know the effect of HTL thickness on photovoltaic characteristic , thickness
of HTL vary from 0.1 to 0.5. In this case absorber thickness was kept at 0.9 and
ETL thickness at 0.5 .
Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

Figure 3.4 JV Characteristic of active layer

 FTO TiO2 MAPbI3 SPRIO Au PCE
(5nm-300nm)
50 nm 20 nm 240 nm 100 nm 100 nm 18.11%

Table 3.2 Efficiency at Optimised active layer and ET

The PCE of the device decreases with increase in thickness of HTL .This could be
due to the increase in path length . Therefore recombination of exciton increase.

3.1.4 CATHOD OPTIMISTION

Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

 Figure 3.4 JV Characteristic of active layer

FTO TiO2 MAPbI3 SPRIO Au PCE

(5nm-300nm)
50 nm 20 nm 240 nm 100 nm 100 nm 18.11%

Table 3.2 Efficiency at Optimised active layer and ET

3.1.5 ANODE OPTIMISATION

Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter
 Figure 3.4 JV Characteristic of active layer

FTO TiO2 MAPbI3 SPRIO Au PCE

(5nm-300nm)
50 nm 20 nm 240 nm 100 nm 100 nm 18.11%

Table 3.2 Efficiency at Optimised active layer and ET

OPTIMISED THICKNESSES OF THE DEVICE

Layer Thickness VOC JSC FF% PCE
tactive 240nm 0.869 245.00 79.6 16.95

tetl 20nm 0.870 255.03 81.7 18.13

thtl 100nm 0.82 253.12 82.10 18.11

tfto 20nm 0.871 254.61 82.20 18.22

TAu 60nm 0.821 255.92 82.20 18.31

Table 3.2 Efficiency at Optimised active layer and ET

3.2 OPTIMISING THE TRANSPORT LAYER

3.2.1 DOPING OPTIMISATION
The effect of doping density in ETL and HTL material also affect the characteristic
of the device .The doping level vary from 1e14 to 1E27 to get the effect

3.2.1.1 ETL DOPING LEVEL

To find the effect of doping concentration on PCE, we have vary the doping level
from 1E to 1E .

From above graphs we can say that efficiency , current density and open circuit
voltage has increased with increasing donor concentration (N a). this because of
increase in charge density and hole mobility .
 Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

3.2.1.2 HTL DOPING LEVEL

To find the effect of acceptor doping concentration on PCE, we have vary the
doping level from 1E to 1E .
 Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

We have similar observation as of donor doping concentration ,the PCE , J sc and

Voc increased with an increase in acceptor doping level(N d). This can be because of
increase in carrier concentration .

OPTIMISED DOPING CONCENTRATION

NA ND VOC JSC FF PCE
(m-3) (m-3) (v) (Am-3) (%)
2E25 4E25 0.871 255.79 0.826 18.385
Table 3.2 Efficiency at Optimised active layer and ET

3.2.2 OPTIMISED MOBILITIES

SPIRO TiO2 VOC JSC FF PCE
(v) (Am-3) (%)
E H E H
0.869 255.66 0.834 18.56
1X 10-8 1X10-1 6X10-1 6X10-7
Table 3.2 Efficiency at Optimised active layer and ET

3.3 OFFSET AT ELECTRODE

3.3.1 EETL OFFSET
EETL OFFSET VOC JSC FF PCE
(ev) (V) -3 (%)
(Am )
0 0.869 255.83 0.833 18.527
0.05 0.869 255.83 0.833 18.532
0.1 0.869 255.82 0.833 18.532
0.15 0.869 255.83 0.833 18.532
0.2 0.869 255.83 0.833 18.532
0.25 0.869 255.83 0.832 18.531
0.3 0.869 255.82 0.832 18.528
0.35 0.869 255.82 0.831 18.508
0.4 0.870 255.82 0.825 18.386
0.45 0.868 255.78 0.806 17.901
0.5 0.838 255.67 0.789 16.924
Table 3.2 Efficiency at Optimised active layer and E
Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

Figure 3.3 Effect of changes in thickness of HTL on characteristic parameter

 3.3.2 EHTL OFFSET
EETL OFFSET JSC FF PCE
(ev) (Am-3) (%)
0 255.82 0.832 18.527
0.05 255.71 0.832 18.522
0.1 255.65 0.832 18.510
0.15 255.62 0.831 18.492
0.2 255.60 0.827 18.398
0.25 255.57 0.809 18.019
0.3 255.49 0.768 17.129
0.35 255.13 0.719 15.992
0.4 0.861 251.51 0.675 14.618
0.45 0.840 234.91 0.649 12.836
0.5 0.790 170.96 0.636 8.611
3.4 ACTIVE LAYER RECOMBINATION
k VOC JSC FF PCE
(V) (Am-3) (%)
1X 10-10 0.587 -7.91 0.564 0.260
1X10-12 0.696 31.36 0.773 1.685
1X10-14 0.810 175.83 0.808 11.513
1X10-16 0.930 269.39 0.836 20.953
1X10-18 1.049 270.99 0.850 24.177
1X10-20 1.938 271.01 0.520 27.343
1X10-22 86.242 271.01 0.012 28.395