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Introduction to BEE

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Syllabus of Basics Electronics Engineering
• Introduction to Electronics

• Semiconductor Diodes and their Applications

• Transistors

• BJTs

• FETs

• OPAMPs

• Feedback Amplifier and Oscillators

• Electronic Instruments
• CRO,

• Generator

• Signal Generator,

• DC Power Supply 1
 Basic Electronics Engineering

#LECTURE –1

DR SANJEEV KUMAR MISHRA

 INTRODUCTION

 SYLLABUS

 LECTURE PLAN

 TEXT BOOKS

 INTRODUCTION TO ELECTRONICS

2
INTRODUCTION

• Electronics: is the science of how to control electric energy (in

which electrons have fundamental role).
• Engineering is the application of mathematics, empirical
evidence and scientific, and practical knowledge in order to
• invent,
• innovate,
• design,
• build,
• maintain research, and
• improve structures, machines, components, materials, pro
cesses and organizations.

3
IMPORTANCE

Recent Future

Technology
& Electronics Systems
Communication System

Subsystem Satellite, Mobile,

Radar .. any

Circuits / IC

Components

Passive Active

Scope of Course 4
• We are living in an age of “Technology”

• Due to the great success that we have achieved in the field of

electronics, there is a deep impact in the era of recent and future
technologies: Space Communication, Terrestrial Communication,
Satellites, Health care, Automobiles and Military Applications.

• User friendly and easy to use.

• Ex: TV, Mobile, AC, Watch etc. : controlled by a child.

• In short “ Technological developments of several countries of the globe

are directly related to strengths in electronics design, manufacture
products and services”

• Study, design and analyse the circuits.

6
Introduction to Electronics
Analog Electronics
Basic Electronics
Digital Electronics

Components & Devices Circuits Measuring Instruments

Passive Active
Rectifiers, Digital Multimeter
R Transistor Clipper, Oscilloscopes
L OPAMPs Clamper Function Generators
C Amplifiers
Filters
Prerequisites:
Oscillators
• Some basic understanding of general principles of electricity and
magnetism 7
Books
1. Electronic Devices and Circuit Robert L. Boylestad and Louis
Theory Nashelsky, Pearson Education
2. Electronic Instrumentation H.S. Kalsi, Tata McGraw-Hill
Publishing Company Limited

Integrated Electronics: Analog Digital Circuits and Systems Jacob

Millman, Christos Halkias. McGraw-Hill, Inc., New York, NY, USA 1972
Microelectronic Circuits, Adel S. Sedra and Kenneth C. Smith
Electronic Devices (Seventh Edition) Thomas L. Floyd, Pearson
Education
8
Grading Policy:

• Assignment / Faculty Assessment:

• Quiz
• Midterm:
• End Exam:

9
Failure will never overtake if determination to succeed is strong enough

Scope of Course (Each one should)

• gain a good understanding of electronics, circuits, devices, systems.

• design, analyse the circuits and test them independently.

• Simulation [Using Software]

• Laboratory [using breadboard, PCBs]

• Let us try to learn such skills by proven scheme “ Learning by Doing”.

• One can agree with me (Old proverb) • I read -- I forget

• I see -- I remember

• I do -- I understand

• Ex: dancing, playing, singing, So, “Just do it”

• While doing we trend to fail, but do not stop

“ Failures are stepping stones to success”

• Try to design and implement new circuits in terms of any aspect “Size,
Weight, Profile, Shape and Low power consumption. 10
• Proposed syllabus is a basically a laboratory course.

• Structure of the course will full-fill the needs of three group of students:
Basic,
Intermediate
Theory
Advanced

Lab Tour Basic Electronics Exercise

Simulations
Requirement:
Motivation
Curiosity
Fun of learning and exploring the magical world of Electronics 11
“To Understand a Science, it is necessary to know its HISTORY”

• Electrons: discovered by J. J. Thomson (1897) when he was studying the

properties of cathode ray.

• Protons: by Rutherford (1909) in his famous gold foil experiment.

• Neutrons: by James Chadwick (a student of Rutherford) won Nobel Prize

(1935) for discovery of neutron.
Particle Symbol Charge Mass

Electron e– -1.60×10-19 C 9.1×10-31 kg

Proton p+ (H+) 1.60×10-19 C 1.672×10-27 kg
Neutron n0 0.00 C 1.674×10-27 kg12
 qe = −1.60×10−19 [measured by R. Millikan in Oil drop exp.
J. J. Thomson (Nobel Prize in
1906) for discovering the Me = 9.1×10−28 gram.
elementary particle electron. Electron  2000 times lighter than hydrogen 13
Rutherford and James Chadwick
In his gold foil experiment, Rutherford bombarded
qp = 1.60×10−19 a beam of alpha particles on an ultrathin gold foil
Mp = 1.67×10−27 Kg. and then detected the scattered alpha particles in
zinc sulphide (ZnS) screen 14
 SEMICONDUCTOR DIODES

#LECTURE - 2

 INTRODUCTION

 P H Y S I C A L O P E R AT I O N O F P - N J U N C T I O N D I O D E

 CHARACTERISTICS OF P-N JUNCTION DIODE

 DIFFERENT TYPES OF DIODES

15
 INTRODUCTION

First IC (1958) a phase

shift oscillator,
(Courtesy of Texas
Instruments.)
Intel® Core™ i7 Extreme
Jack S. Kilby, Texas Ins. Edition Processor.

• IC means many components packaged in single wafer or semiconductor.

• IC i7 has 731 million transistors in a package
• Surface area is only slightly > 1.67 sq. inches

16
 INTRODUCTION
• Diode [1939]: Two electrodes
• Technology:
• Solid state type using semiconductors:
• Vacuum tube type
• Semiconductor: whose  lies between conductor (  ) and insulator (  0) .
• Have a negative temperature coefficient
• R decreases with an increase in heat
• Type1:
• Single crystal [Ge, Si ]
• Compound semiconductors [GaAs, GaN)
• Type 2:
• Intrinsic semiconductor [Ge, Si etc (tetravalent)]
• Extrinsic semiconductor
• p type (+ trivalent-B, Ga),
17
• n-type (+ pentavalent-P, As, Sb)
18
SEMICONDUCTOR MATERIALS
• Semiconductor: whose  lies between conductor (  ) and insulator (  0) .

19
Energy levels: insulator, a semiconductor, and a conductor
W (Energy) = Q V
= (1.6 * 10-19 C)(1 V)
= 1.6 * 10-19 J 20
Ge, Si
• The atoms of both materials form a very
definite pattern that is periodic in nature
(i.e., continually repeats itself).
• One complete pattern is called a crystal
and
• the periodic arrangement of the atoms a
lattice .
Ge and Si 3-D diamond single crystal structure

21
No of electrons = 2n2
n no of orbits

Atomic structure 22
Types of SEMICONDUCTOR
• Intrinsic semiconductor [Ge, Si etc (tetravalent)]
• Extrinsic semiconductor
• p type (+ trivalent-B, Ga),
• n-type (+ pentavalent-P, As, Sb)

23
n-type and p-type Semiconductors

24
25
SEMICONDUCTOR DIODE: p-n Junction Diode

26
No Applied Bias (VD = 0 V)

27
Reverse Bias Condition (VD < 0 V)

28
Reverse saturation current
• This increase in level is due to a wide range of factors that include
• leakage currents
• generation of carriers in the depletion region
• higher doping levels (results in increased levels of reverse current)
• sensitivity to the intrinsic level of carriers in the component materials
[by a squared factor double the intrinsic level, reverse current could
increase by a factor of four].
• a direct relationship with the junction area [double the area of the
junction, the reverse current could double. Ex: High-power devices]
• temperature sensitivity
• whereas a 10°C increase in current will result in doubling of
the actual reverse current of a diode

29
Forward Bias Condition (VD > 0 V)

30
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Books
1. Electronic Devices and Circuit Robert L. Boylestad and Louis
Theory Nashelsky, Pearson Education
2. Electronic Instrumentation H.S. Kalsi, Tata McGraw-Hill
Publishing Company Limited

Integrated Electronics: Analog Digital Circuits and Systems Jacob

Millman, Christos Halkias. McGraw-Hill, Inc., New York, NY, USA 1972
Microelectronic Circuits, Adel S. Sedra and Kenneth C. Smith
Electronic Devices (Seventh Edition) Thomas L. Floyd, Pearson
Education
31