GROUP NAME: BROWN CAKE ELECTRONIC

GROUP MEMBER:
1- DONYA YASSIN (LADDER)
2- TAHA BADR
3- MOSTAFA HOSSAM
4- MOSTAFA NASSER
5- YOUSEF HUSSEIN
1- circuit symbol and physical material construction
INTRODUCTIONS

Semiconductors:
1. Each has four electrons in its outer orbital
2. A pure silicon in normally is nearly an insulator
3. It can be conductor by doping
 N-Type Material

N-Type Material: When extra valence electrons are introduced

into a material such as silicon an n-type
material is produced. The extra valence
electrons are introduced by putting
+4 +4 +4 impurities or dopant into the silicon. The
dopant used to create an n-type material are
Group V elements. The most commonly
+4 +5 +4 used dopant from Group V are arsenic,
antimony and phosphorus.
The 2D diagram to the left shows the extra
+4 +4 +4 electron that will be present when a Group V
dopant is introduced to a material such as
silicon. This extra electron is very mobile.

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 P-Type Material

P-Type Material: P-type material is produced when the dopant

that is introduced is from Group III. Group
III elements have only 3 valence electrons
and therefore there is an electron missing.
+4 +4 +4 This creates a hole (h+), or a positive charge
that can move around in the material.
Commonly used Group III dopant are
+4 +3 +4 aluminum, boron, and gallium.
The 2D diagram to the left shows the hole
that will be present when a Group III dopant
+4 +4 +4 is introduced to a material such as silicon.
This hole is quite mobile in the same way the
extra electron is mobile in a n-type material.

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 The PN Junction
Metallurgical
Steady State
Na Junction Nd

- - - - - + + + + +
When no external source
P - - - - - + + + + + is connected to the pn
n
- - - - - + + + + + junction, diffusion and
- - - - - + + + + +
Space Charge
drift balance each other
ionized
acceptors
Region ionized out for both the holes
donors
E-Field and electrons
_ _
+ +
h+ drift = h+ diffusion e- diffusion = e- drift

Space Charge Region: Also called the depletion region. This region includes
the net positively and negatively charged regions. The space charge region
does not have any free carriers. The width of the space charge region is
denoted by W in pn junction formula’s.

Metallurgical Junction: The interface where the p- and n-type materials meet.

Na & Nd: Represent the amount of negative and positive doping in number of
carriers per centimeter cubed. Usually in the range of 1015 to 1020.
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 The Biased PN Junction

Forward Bias: In forward bias the depletion region shrinks slightly in

width. With this shrinking the energy required for
charge carriers to cross the depletion region decreases
Vapplied > 0 exponentially. Therefore, as the applied voltage
increases, current starts to flow across the junction.
The barrier potential of the diode is the voltage at which
appreciable current starts to flow through the diode.
The barrier potential varies for different materials.

Reverse Bias: Under reverse bias the depletion region widens. This
causes the electric field produced by the ions to cancel
out the applied reverse bias voltage. A small leakage
Vapplied < 0 current, Is (saturation current) flows under reverse bias
conditions. This saturation current is made up of
electron-hole pairs being produced in the depletion
region. Saturation current is sometimes referred to as
scale current because of it’s relationship to junction
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 charactristics of Diodes

ID (mA)
• VD = Bias Voltage
• ID = Current through
Diode. ID is Negative
for Reverse Bias and
IS Positive for Forward
Bias
VBR
• IS = Saturation
Current
~V VD
• VBR = Breakdown
Voltage
• V = Barrier Potential
Voltage

(nA)
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 PN Junction Characteristic
⚫ Forward Bias
o Battery connection is made as in fig.
o Holes are repelled by +ve battery terminal Electrons• Electrons by -
ve battery terminal
o Both electrons & holes are driven towards the junction
o Large current flow through it
o The junction offers low resistance in the forward direction

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 PN Junction Characteristic
⚫ reverse bias
• Battery connection is made as in fig.
• Holes are attracted by -ve battery terminal
• Electrons by +ve battery terminal
• Both electrons & holes move away from the junction
• No current flow unless small current due to minority thermally charges
• The junction offers high resistance in the forward direction

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PN Junction Characteristic

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