Binding energy per nucleon versus mass number curve for nuclei is shown in figure. W, X, Y and Z are four nuclei indicated on the curve. The process that would release energy s [1999] ae BE Brey of GC vz nude? § fo B% X= loz F20 3 85 { W>X+Z . 5380 fm zo YY = 8Snbox Slo pe75 © 50 W> 2¥srbie a Re Co. 7 WEPSHos Yo BY. ; Fs SOX 302 (So Ohtian 0 30 60 120 Mass number of nuclei te Xo The Gael By, ar ee jonde > We Reobeerds WH Tone> 2 feb oa T. fre boards 241 0) November Start 247d) Finst week, of Dec 28/, Q Send ve = 7 da) Thirh dee. Beyond a chat QTE empite Target —¥ 0 Tan # write Sabe oben PES Matetals Clomifiatfon ow the bats f Blectkcak Conductance a, 4 et Comalu chors Serni-Cnductors Trswbesors > Uhtch trax Free Valence > of Absolute Zero (OK) Whtehe clonok have, © foc Conduction Oh © ama beended stoke free & Cail o a ty Cio Conductton ts posi behave Uke Trsuloters =} On heddiing Some eo become free aor bind Sauwiakby CHenee, Condit Secbtaty) 3) bounded, Stu) hence, Canndt Crduet,Sumtomdncbors —p Group 4 Zlements Ss Ge Valence & = 4 Nos But fv SP Mvebertel a? as Valens electror Mable okoms bona 6— 223 ar fe -—— es Teele, St ator alk Energy, Levels of Shells onde § Baad Ree a ek ai aas Sreagjeg ob cuker Shah Vary § form bands so ane Oe Ze oS. $ 1 Volence, Shella overlab $ fon Eneray bande . J j ud n=2 © Valence & Canexstet en Rewrge wel I 4 Ene en ———————> © Louw Zerg Band CAI Valence e= Reitde) => Valence Bard Erergy prebile im Si Mabate oi © biprer Bourg ena, Condetton Rare@ Ener } umat Energy qe) of Conductfon Band Forbidden Gab) Valance Band C all Valence & Restsle) iden Goh Srey Band, ren (VB) max (i) _Itis the energy gap between CB and VB. (ii) It is also called forbidden energy gap because free electrons can not existin this gap. (iii) Width of forbidden energy gap depends upon the nature of substance. (iv) Width is more, then valence electrons are strongly attached with nucleus. (v) Width of forbidden energy gap is represented in eV. (vi) As temperature increases forbidden energy gap decreases (very slightly). @ Ou the bests of this theory Makeric VB CB overlab Ey sponer IV aie, > er =D Valence, Shadh Com, Pree Raye PY. Snergy fs Sebblicd im eters Stl ld ceed Conacee T P” Iesemit 8 conductWhen (© hos become Prer Par Gu € am VB | Ce ontn bonded form) CTmdile é ) (fied 2 Ce ome dn Inner Bnergie> Ein CB) © 4s Pree Reon bond U hen € J ov Jee f Reve VB BCR Pabrerentsiton ob jumps 4 Py bounded: fren ( CYalenee bas, higher Energy there is heb win VOB { Hobe, den VB Rebrerent ConductfonResistance Decreases with increase in temperature Face centred cubic (FCC) Conduction properties may change by adding small impurities. Position in periodic table —> IV group (Generally) Forbidden energy gap (0.1 eV to 3 eV) Ge : 2, 8, 18,4 Si: 2,8,4 = sD x ca lew ve Energy (eV) é Energy eV) Charge carriers: electron and hole. There are many semiconductors but few of them have practical application in electronics like Ge* : 2, 8, 18, 4 Si: 2,8,4 Energy (eV) S & Energy (eV) S 6 Z_ Slolemeas= 6 sh CB represent Conduction. Ce flowin 6 —> Current) @ regen ductor os + + t+ +tProperties of holes + Itis missing electron in valence band. + Itacts as positive charge carrier. ¢ It's effective mass is more than electron. + It's mobility is less than electron. Hole acts as virtual charge, although there is no physical charge on it. Holes > Vo cant Sites. — Move— T —> hole rnrbility Te Lew an Compared to Kee em > EHfective moon f hoe Efectie’ man of 7G ce lg N& Hid da NB clas ebrexedt, GreSemiconduchors ( ¥ Pave foe 4 5 Semiconductor (Elemental, St, Ge) ® for Conduction CTembT ») hen aad possible © Low charge Carers y Pips when [4 avoub 2 i e v 14 grou Slement C4 Valence €°) Gin dobed uth [3 9ve . “ & a joe | Rediner om oe eceptoye Sa Yo + Sts > % 5S eel Neen ee Boch hectbhorobewn, dora by Ua despa, thy PThe Senleondudors hela Majerly See Minty —> %—> Boron Liinste Condacs (rt stent) Hat G Current Suuctustion f S ste semiconductor an: tb Slaments % Dred Semtconduchors Chaditton, 4 External, Tmbuvties) This process Gy Called deftng c= Gabs fade’ ~ Siac Trp a Sized Hams in ghomert sity cory Showkd be of Lelfien. Gites, A Tpustty Savery 7 sy N- Tpe on [4 Qroub Zlemen Oa deBadd with Each dan akon vil git dere Try Netgbe Senfeondustor hues —> Mimovtt electron —b Se tre hatitce ee Cc es cer SoS Si STS * si si Si 88 + sie si SiS 5 + se OSES Y y si Sg ! sos 8 Yodsos ww {ois : 1 . os k : ° 1 sy oye NY v i sy oye MS& 5) sisi siisi si S ie si b [pe si Bo si Bosi | [si sies si si Siesi si @ [see si $i Be Si B Si, fis 68 S$ .si sis Sie ¢ 3 . sos oS OS Be si Pp bine ape Latta, os [B+0]@ rhea sonal Cher ton) | PEE © Sectlly ed He Type Energy band, Theory Tabinste (Ron Temp ) 8 oo Aonabead by onar ober ‘oney Level) Eee Sa eared Doped ec | trivalent impurity @, In, AD acceptor impurity (N,) A>>n, (pure form of Ge, Si) pentavalent impurity (P, As, Sb) donor impurity (NJ)Intrinsic Semiconductor N-type (Pentavalent impurity) P-type(Trivalent impurity) h. oe tet Shea)... ot 1 | ttt purty acceptor i: oa “a Waa] fe oe PP PaaS PPP ete 2° 0 | Aereis ae oo Serre PPP | en 3. Curentsde toboth eres Mainy due to holes Soe neAen, AS AMER aa Nea) 5. tel [el Eee rer Entirely neutral Entirely petal 7. uml of elecrona Maj -Bearona Majority - Holes and holes are equal Minority -Holes Minority - ElectronsConauckivi y t Ntge TKN, Le mete edn 2 Semicomduckey | 72 Weedle haa te nove to 2 —_ OV" OS Nierype a 0 " y aay A Vag siz OFY ella ink \ Vibe Vee Ge = O87 Ne Camas o.fem of Constant Carert) u YS Dineteg Ablgtes an Exterwal, tele ty & PN Jancton diode oy Lroeward Bias | Lee!Forward Bs @ 6 [V>Ve @ © © WiiLbepuhed, through, aebletfon Regge Ps te) Te Pate o¢ So Tune from N—> PH Cunent cleelep win Ck Cabhesl forse Current Crk). C need) © bts procen debletton ‘i @ for Un RB, Ray Carriers Jump oiur clebletfon Yaaton Tron CK Reverse Carter @ ery Snath.CaMt) or aC © Bigger bathe FARA Reverse Bias SMe coer esr lee omece leo peri erm enc 2. Width of depletion layer decreases. __2. Width of depletion layer increases. Ee MCC asec ERO Cn arco ancora resistance.4 Forward current flow in circuit. Pe eters crates 5. Order of forward current is milli Rom gee e nec ea C3) eran or Nano ampere (Si). vc aur onset nei CAVE au reese ees 9. _ Knee or cut in volage 9. Breakdown volage Ge+03V, Si>0.7V Ge+25V, Si+35V yp N CharackertsHe Gpe f FO RB Sefer OTe Lob ® Griphe beboeen T4V fordiode Jn Biastrg tay» yrante Fest Tort) 5—IS Exporert and CNon=ahente,) PA Oe teats aT PAC} cid Mee a a V, (volt) —> Te Ea oer ssecnts er) po oyMeh aoe MTC ELy Comeeph = VorVy 70 FP a —p— he bebo yoy <0 RB lev ° 5 NerYy = 156 » ——- e-Mn 4 a év BeBe & 9 Nt Vpn 7 tere ele <0 &») =\0 a mu “t 9 PMU etna eal Core dtode, ( y 8) | Shot CKE Chon ekt Not Mentioned, whether te Ts St, Ge rade OF Verse Real dode. ( \s Mertfonedt @ St, Ge mode $ \Venae OF Vinee = 3, © Vang ob Gee @ Rasttance of dltede Ps’Forwards Bias Figure shows a diode connected to an external resistance and an emf. Assuming that the|barrier potential developed in diode is 0.5 Vj obtain the value of current in the circuit in milliampere. — os co ~Ir—~ Bath, Bodterie, a SeriesIn the giving circuit. If P-N junction is ideal] then calculate current flowing through it Pw Deo ep 9-3 en 2002 \v LV) In the given circuit determine I, 1, and I,. Find the value of current I in given circuit. : ie 17V Seren —/——_ any | . 0.7429 22 Ene = IV R 7 Si Rk Sul eIfin a p-n junction diode, a square input signal of 10 Vis applied as shown. Then, the output signal across R,, will be: 5V -10V 4a 5 rity ss pf pie accor ths Toh Elp = -sv Oudfuk = OV VeIn the given figure, each diode has a forward bias resistance of|30 and infinite resistance in reverse bias| The current I, will be JEE Main 2021 (Online) 1* September Evening Shift Atods > Ry ob FB dtede —> —w— Joy Zou. 5 > be When a diode is forward biased, it has a voltage drop of 0.5 V. The safe limit of current through the diode is 10 mA. If a battery of emf 1.5 V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is JEE Main 2020 (Online) 3 September Morning Slot A p-n junction diode (D) shown in the figure can act as a[rectifier] An alternating current source (V) is connected in the circuit. The current (I) in the resistor (R) can be shown by := [AIEEE - 2009] Fositive Half Cyele > THE Died’ FB —J \ D . ® R othr. SD 7 a — aThe circuit contains two diodes each with a forward resistance of 502 and with infinite reverse resistance. if the battery voltage is 6 V, the current through the 1209 resistance is mA. JEE Main 2021 (Online) 26" February Morning Shift Di, 1300 D, 1000 1200 nv — ov ASV battery is connected across the points X and Y. Assume D, and D, to be normal silicon diodes. Find the current supplied by the battery if the +ve terminal of the battery is connected to point X. JEE Main 2021 (Online) 25" February Morning Slot [[e) ~osa [[o)~15a [[-}) ~o43a [[4-) ~ 0864 100 ye 50 we Two identical capacitors A and B, charged to the same potential SV are connected in two different circuits as shown below at time t = 0. If the charge on capacitors A and B at time{t = CRiis Qa and Qp respectively, then (Here e is the base of natural logarithm) JEE Main 2020 (Online) 9** January Evening SlotBoth the diodes used in the circuit shown are assumed to be ideal and have negligible resistance[when {these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in Volts) at point A is JEE Main 2020 (Online) 9" January Morning Slot hee ACTIONS ¥ Ve ‘ Rectifier Convert Ac—> de] Totyhes “| 7 J Aa A 2—| eleckonte, [— o—| deke |— > Full lave f Rectidier Ale Mle 3 Cnvertion 4 kh De Festiah DC Sevrdle Sie a Ne Ns Ben Mepup NyeNe JN Sebdnan rans Yo Vad, —® chan Vanes 7 Syteog Ag Se diese He Filter circuit funk a Cobec ed © Clapeaiter doerned allow DE Comporank - Rectifier efficiency (n) For half wave rectifier For full wave rectifier or bridge wave rectifier Nmax= 40.6% | learn, Nimax = 80.2% | lesen Ripple Frequency - (i) For half wave rectifier Input frequency =|50 Hz Ripple frequency = 50 Hz) i) for full wave rectifier Input frequency =|50 Hz Ripple frequency =|100 HzPhotodiode @ © Dedede of Ushi ® 2N- Tunctfon diede fs usea. mn Reverse Biased ® Swacbsence of | Usht , 1 there Io a Curvent, floaty in Ck C dak Current) Cdr to oe Covtiers) © When Lighnt 4a Treidene on Photo diode Aight Energy —e bord. break te. deb ete u Layer Viton y g@— C4 bapa Revere Garret ele. ® Photodiode @ Itis a special purpose junction diode used to sense and measure incident \WY light. its symbol is HL Itis operated under reverse bias. @ (Onder of intensities) (b) Figure (a) An illuminated photodiode, under reverse bias (b) I-V characteristics of a photodiode for different illumination intensity 1, >I, >I,Light emitting diode (L.E.D) 6 Lat Emittng altode. un Forward Bias. . we P N Syebal—> =——— an FB ree 3 Mond ¢ thee, | Oe "Ea guiny: dn cae Energy aed haere oak Srey. § it wt Light emitting diode (L.E.D) N\\ It is a heavily doped P-N junction which under forward bias spontaneous radiation. Its symbol is when LED is forward biased then electrons move from N -> P and holes move from P-yN.Atthe junction boundary these are recombined. On recombination, energy is released in the form of photons of energy equal to or slightly less than the band gap Solar cell FN Tinctton dtede stthont any bash +P type Senteorduchor tity —> when Light fatte anv Aehletton 4 bord, beak t F_. € Bho bate del, Lover. vSolar cell A p-n junction which generates emf when solar radiation falls on it, called solar cell. It works on the same principle (photovoltaic effect) as the photodiode, except that no external bias is applied and the junction area is kept much larger for solar radiation to be incident because we are interested in more power. > WW | S38 Voc (open circuit voltage) —>v Depletion \ region 7 Y '\ short circuit current Atypical illuminated p-n junction solar cell |-V characteristics of a solar cell (a) (b) ZENER DIODE © Norma ode uted dn ® ier Vok 7 Vasc brakdoen tye Te hubs a Fasulading, Vettes wh Yrebronfe ckt Zener eltode Newutdnon Qh . ~~ Ye. N Maly. Carters Timp Cimibed) : Careant Seburaked. GfU. 07 . pavtewlan a x Vodka. — |__ "I (o,~Ve Vabop. ob FSidk F, bonded Seeinne f Aan Velden, then. 4 Suda ) Fore, cha Cort Valiente, Sq Sudden, becky bardsZENER DIODE @ It isa special purpose diode, designed to operate under the reverse bias in the breakdown region and used in voltage regulation. Symbol of Zener diode is etn In reverse bias of zener diode after the breakdown Zener voltage V,, a large change in the current can be produced voltage y, Reverse bias by almost insignificant change in the reverse bias voltage. : In other words zener voltage remains constant, even through current through the zener diode varies over a wide range. This property of the zener diode is used for regulating voltage. Reverse current diede. Normal, Diode PRE Vay dle Aen Sritch —o B What is the value of current lin given circuits? gv 500.0 & re a Z 1kQfomer Ssibetel or Zener 7= Vale a6 x I mw Vebby only Slo te withnet Reashy Breakdwon Resfor = dan ck=D 5 @ For the given circuit, the power across Zener diode is mW. JEE Main 2021 (Online) 26" August Evening Shift 1k a R,=5kn ev v,=104 For the circuit shown below, calculate the value of |, JEE Main 2021 (Online) 20" July Morning Shift 25mA c.)) 0.158 The value of power dissipated across the Zener diode (V, circuit as shown in the figure is x x 107 watt. The value of x, to the nearest integer, is JEE Main 2021 (Online) 16" March Morning Shift 5 V) connected in the R,=350The zener diode has a Vz = 30 V. The current passing through the diode for the following circuit is mA. JEE Main 2021 (Online) 26" February Evening Shift 4k v= Kn 5k cp © e wi Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength < 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly. JEE Main 2021 (Online) 22” July Evening Slot (3) lev [Eye lie) 5°" [ayer cD © @ Ifa semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm, then its band gap energy is Planck's constant h = 6.63 x 10~** J.s. Speed of light c = 3 x 108 m/s JEE Main 2020 (Online) 3% September Evening Slot [a.) 15ev b.) 20ev [c.)) 31ev d.)11evca © @ Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale) JEE Main 2020 (Online) 4% September Morning Slot The circuit shown below is working as a 8 V de regulated voltage source. When 12 V is used as input, the power dissipated (in mW ) in each diode is; (considering both zener diodes are identical) Main 2020 (Online) 9*" January Evening Slot 2000 2000. sy (OI=ID 8 Revise complete Semiconductors taught today “16 VonnheT = Yinde Guy fs Tarsheter Geese 2, Davison Jermee En + le Conbinadfonad sm, @ I Salt Shergy i P. Freanal bitin “8 aja rer | 7 Reselving Power ‘ ray 4. Z Parmenter: NB DabTake the|breakdown voltage of the zener diode used in the given circuit as 6V. |For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale) JEE Main 2020 v 1 = % ‘ nov 7 D, vf ti a ae 6 THe = R 0 Reyer alge YY --—"—_— vavg —* © Y D) RB as = | Dv FS ~ ¥ VVcy The circuit shown below is working as a 8 V de regulated voltage source. When 12 V is used as input, the power dissipated (in mW ) in each diode is; (considering both zener diodes are identical) JEE Main 2020 GC 9 Basic Logic Gates iN NA Y=AtB _» Comblmattow af dtodes, tianstetor, Reststore ¢ balla whitey abies Logteal cathe for Guten Fp A 7s Combination input_ |)" vas —fO Byte’ 8 Eg Sweat) fe a6] Bikey TL dove Trpub (haga, Fab lps Mileya,» B Output L NANe (AND + Net) Con + NT) ( ) A : Tove PL) ewes of ORGS) > ale TY TEI \ Nok + pork, . > AND. R= tet heAzh 5. AR =O 6 @a= Az0 Ol = 0 _ Az\ (Noreic: o=! To on+ Some other useful identities (DA+AB=A = ACI¢B)= Al=AUii)|A.(A+B)=A| ~ Ash + AB (iii) A. (A +B) =AB At AB FAR + AB = AB ACB) = A + [De Morgan's theorem . +— § = First theorem: A+B=A.B re — Second theorem : A.B=A+B O AR ALB = Write down output ¥ in terms of inputs A and B. Rack A A Tynan =o K se {= A+B BS - =] navn NOR oe A 0 B Y= bB*+B NAND aN Nor = B(A+) = OR ia Write down the equivalent function performed by given circuit. Be— Nok, z = D) Be Nand AG oe Nogca To get an output 1, the input ABC should be: 101 4 Co 100 =Borktpe =O o 110 = bukpd-=0 o 010 = oubbik =e" Y= Gra) Y= Ci+d)>| Sh By = The circuit shown here is logically equivalent to: GF von Co AND gate o NOT gate nee Nek o NAND gate Riga + RRR = (rs) re) * his)