SKiiP 81 ANB 15 T1 MiniSKiiP 8

Absolute Maximum Ratings SEMIKRON integrated

Symbol Conditions 1)
intelligent Power
Values Units
Bridge Rectifier SKiiP 81 ANB 15 T1
VRRM 1500 V 3-phase bridge rectifier +
ID Theatsink = 80 °C 100 3) A IGBT braking chopper
IFSM tp = 10 ms; sin. 180°, Tj = 25 °C 1000 A
I²t tp = 10 ms; sin. 180°, Tj = 25 °C 5000 A²s
IGBT Chopper
VCES 1200 V Case M8a
VGES ± 20 V
IC Theatsink = 25 / 80 °C 33 / 22 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 66 / 44 A
Freewheeling Diode 2)
VRRM 1200 V
IF Theatsink = 25 / 80 °C 24 / 17 A
IFM tp < 1 ms; Theatsink = 25 / 80 °C 48 / 34 A
Tj Diode & IGBT – 40 ... + 150 °C
Tstg – 40 ... + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
Diode - Rectifier
VF IF = 75 A Tj = 125 °C – 1,15 – V
VTO Tj = 125 °C – 0,8 – V
rT Tj = 125 °C – 4,5 – mΩ
Rthjh per diode – – 1,0 K/W
IGBT - Chopper UL recognized file no. E63532
VCEsat IC = 25 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
• specification of temperature
td(on) VCC = 600 V; VGE = ± 15 V – 75 – ns
tr IC = 25 A; Tj = 125 °C – 65 – ns
sensor see part A of data book
td(off) Rgon = Rgoff = 47 Ω – 400 – ns ´99
tf inductive load – 50 – ns • common characteristics see
Eon + Eoff – 6,2 – mJ page B 16 – 4 of data book ´99
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,65 – nF
Rthjh per IGBT – – 1,0 K/W
Diode 2) - Chopper
VF = VEC IF = 15 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V 1) Theatsink = 25 °C, unless otherwise
VTO Tj = 125 °C – 1,0 1,2 V specified
rT Tj = 125 °C – 53 73 mΩ 2) CAL = Controlled Axial Lifetime
IRRM IF = 15 A; VR = – 600 V – 16 – A Technology (soft and fast recovery)
Qrr diF/dt = – 400 A/µs – 2,7 – µC 3) limited by spring contact
Eoff VGE = 0 V, Tj = 125 °C – 0,6 – mJ
Rthjh per diode – – 1,7 K/W
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 mounting torque 2,5 – 3,5 Nm
Case mechanical outline see pages M8a
B 16 –13 and B 16 – 14

© by SEMIKRON 000621 1
 Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

30NA1203.xls 30NA1204.xls-3
10 8
Tj = 125 °C Tj = 125 °C
mWs mWs
VCC = 600 V VCC = 600 V
8 VGE = ± 15 V VGE = ± 15 V
Eon
RG = 47 Ω 6
Eon IC = 25 A
6

4
Eoff
Eoff

2
2
E E

0 0
0 IC 10 20 30 40 A 50 0 RG 30 60 90 Ω 120

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)

ICpuls = 25 A VGE = 0 V
f = 1 MHz

Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. VCE

2 000621 © by SEMIKRON