University of Tripoli

Faculty of Engineering
Electrical and Electronic Engineering Department

EE311 – Electronic Laboratory

Spring 2023

Experiment #3
BJT Characteristics
Pre-LAB

Name: Mohamed Mustafa Kamil

ID: 2180205565
Group: D
Instructor: Eng. Taissir Y. Elganimi
Pg. 01 EE311 LAB

Pre-LAB Questions

1) Define the common emitter ℎ-parameters (𝒉𝒊𝒆 , 𝒉𝒓𝒆 , 𝒉𝒐𝒆 𝒂𝒏𝒅 𝒉𝒇𝒆).

𝝏𝑽
𝒉𝒊𝒆 = 𝝏𝑰 𝑩 | : The small-signal input resistance for common emitter
𝑩 𝑽𝑪

𝝏𝑰
𝒉𝒐𝒆 = 𝝏𝑽𝑪 | : The small-signal output admittance
𝑪 𝑰𝑩

𝝏𝑰
𝒉𝒇𝒆 = 𝝏𝑰 𝑪 | : This common-emitter current transfer ratio is called short circuit current gain
𝑩 𝑽𝑪

𝝏𝑽
𝒉𝐫𝐞 = 𝝏𝑽𝑩 | : Is called the reverse voltage gain
𝑪 𝑰𝑩

2) Explain how you can determine the approximated values of the ℎ-parameters from the measured input
and output characteristics of a Bipolar Junction Transistor (BJT)?

From the BJT input and output characteristics, we can figure out 𝐼𝐵 , 𝐼𝐸 , and 𝐼𝐶 and from there we can figure out
𝛽 and 𝑟𝑒 , Next, a connection configuration is chosen, Since h -parameters are based on currents and voltages,
they can be obtained by substituting in their own equations functions of h-parameters only or of 𝑟𝑒
Pg. 02 EE311 LAB

3) What are the advantages and disadvantages of the 𝒓𝒆 -model over the ℎ-parameters model of a BJT?

The 𝑟𝑒 model is more sensitive to DC level of operating.

𝑟𝑒 Model is just approximated model of the hybrid model which makes calculations less complex because
calculations of hybrid parameters are so complex.
𝑟𝑒 Model is made of only resistors. The hybrid model has the combination of impedances, admittances,
reverse voltage gain, and forward current gain hence the name hybrid.

4) Simulate the circuit shown to plot the 𝒊𝑩 − 𝒗𝑩𝑬 characteristic of BC107 by adjusting the 10 𝐾Ω
potentiometer and measuring the base-to-emitter voltage 𝑽𝑩𝑬 for the following values of the base
current 𝑰𝑩 :

𝑽𝑹 (𝒎𝑽) 𝟎 𝟒𝟎 𝟗𝟎 𝟏𝟒𝟎 𝟏𝟗𝟎 𝟐𝟒𝟎 𝟐𝟗𝟎 𝟑𝟒𝟎 𝟑𝟗𝟎 𝟒𝟒𝟎 𝟒𝟗𝟎 𝟓𝟒𝟎 𝟓𝟗𝟎
𝑰𝑩 (𝝁𝑨) 0 8.536 19.15 29.788 40.43 51.093 61.70 72.349 82.98 93.65 104.25 114.87 125.53
𝑽𝑩𝑬 (𝑽) 0 0.6631 0.6939 0.7050 0.7150 0.7205 0.7254 0.7328 0.7371 0.7430 0.7466 0.7517 0.7548

V-I characteristics
140

120

100
I_B(uA)

80

60

40

20

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_BE(V)
Pg. 03 EE311 LAB

5) Connect the circuit shown below using BC107, and set the value of the base current 𝐼𝐵 by adjusting
the10 𝐾Ω potentiometer, and then measure the collector current 𝐼𝐶 and calculate the value of 𝛽 for
different values of 𝑉𝐶𝐸 by adjusting the 4.7 𝐾Ω potentiometer as in the following table, and plot the
output characteristics.

𝑰𝑩 (𝝁𝑨) 𝑽𝑪𝑬 (𝑽) 𝟎. 𝟏 𝟎. 𝟐 𝟎. 𝟑 𝟎. 𝟓 𝟎. 𝟕 𝟏 𝟐 𝟑 𝟒 𝟓

𝑰𝑪 (𝒎𝑨) 𝟏. 𝟓𝟑 𝟐. 𝟕𝟓 𝟐. 𝟖𝟒 𝟐. 𝟖𝟓 𝟐. 𝟖𝟔 𝟐. 𝟖𝟕 𝟐. 𝟗𝟏 𝟐. 𝟗𝟒𝟗 𝟐. 𝟗𝟖𝟔 𝟑. 𝟎𝟐𝟑
𝟏𝟎𝝁𝑨
𝜷 𝟏𝟓𝟑 𝟐𝟕𝟓. 𝟐𝟖𝟒 𝟐𝟖𝟓 𝟐𝟖𝟔 𝟐𝟖𝟕 𝟐𝟗𝟏 𝟐𝟗𝟒. 𝟗 𝟐𝟗𝟖. 𝟔 𝟑𝟎𝟐. 𝟑

𝑰𝑪 (𝒎𝑨) 𝟔. 𝟓𝟓𝟓 𝟏𝟏. 𝟐𝟕𝟗 𝟏𝟏. 𝟔𝟐𝟔 𝟏𝟏. 𝟔𝟕 𝟏𝟏. 𝟕𝟎𝟐 𝟏𝟏. 𝟕𝟔 𝟏𝟏. 𝟕𝟒𝟖 𝟏𝟏. 𝟗𝟎 𝟏𝟐. 𝟐𝟏 𝟏𝟐. 𝟑𝟔𝟖
𝟒𝟎𝝁𝑨
𝜷 𝟏𝟔𝟑. 𝟖𝟖 𝟐𝟖𝟏. 𝟗𝟕 𝟐𝟗𝟎. 𝟔𝟓 𝟐𝟗𝟏. 𝟕𝟓 𝟐𝟗𝟐. 𝟓𝟓 𝟐𝟗𝟒 𝟐𝟗𝟑. 𝟕 𝟐𝟗𝟕. 𝟔 𝟑𝟎𝟓. 𝟑 𝟑𝟎𝟗. 𝟐

𝑰𝑪 (𝒎𝑨) 𝟏𝟑. 𝟔𝟖𝟖 𝟐𝟑. 𝟗𝟏𝟗 𝟐𝟒. 𝟕𝟗 𝟐𝟒. 𝟖𝟗𝟔 𝟐𝟒. 𝟗𝟔𝟕 𝟐𝟓. 𝟎𝟔𝟓 𝟐𝟓. 𝟑𝟗𝟓 𝟐𝟓. 𝟕𝟐 𝟐𝟔. 𝟎𝟔 𝟐𝟔. 𝟑𝟗𝟏
𝟗𝟎𝝁𝑨
𝜷 𝟏𝟓𝟐. 𝟎𝟗 𝟐𝟔𝟓. 𝟕𝟔 𝟐𝟕𝟓. 𝟒𝟔𝟔 𝟐𝟕𝟔. 𝟔𝟐 𝟐𝟕𝟕. 𝟒𝟏 𝟐𝟕𝟖. 𝟓 𝟐𝟖𝟐. 𝟏𝟔 𝟐𝟖𝟓. 𝟖 𝟐𝟖𝟗. 𝟔 𝟐𝟗𝟑. 𝟐𝟑

Output Characteristics
30

90uA
25

20

15
40uA
10

5
10uA
0
0 1 2 3 4 5 6