SKKT 250, SKKH 250

./-0 .//0 .&/0 1/0- 2 3%4 + )5 ,       *
. . 1+. 2 %$4 + )  6748  2 7$ 9'*
:44 744 -;; %$4<47! -;; %$4<47!
6#44 6%44 -;; %$4<6%! -;; %$4<6%!
6=44 6"44 -;; %$4<6"! -;; %$4<6"!
6:44 6744 -;; %$4<67! -;; %$4<67!

Symbol Conditions Values Units

1+.  6748  2 7$ )644* 9'8 %$4 )6=7 * +
1& 6"<%44>8  2 #$ 9'8 ?%<?" 3$4 < $7$ +
SEMIPACK® 3 1/0- 6"<%44>8  2 #$ 9'8 @6 < @# $"" < # A 3=6 +
1-0 ,B 2 %$ 9'8 64  :444 +
,B 2 6#4 9'8 64  7444 +
Thyristor / Diode Modules C ,B 2 %$ 9'8 7# 64  34$444 +C
,B 2 6#4 9'8 7# 64  #%4444 +C
. ,B 2 %$ 9'8 1 2 =$4 + 5 63 .
SKKH 250 .)D* ,B 2 6#4 9' 5 4:%$ .
 ,B 2 6#4 9' 5 43$ E
SKKT 250
1&&8 1/& ,B 2 6#4 9'8 ./& 2 .//08 .&& 2 .&/0 5 7$ +
 ,B 2 %$ 9'8 1F 2 6 +8 F< 2 6 +<G 6 G
 .& 2 4"= A .&/0 % G
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),<* ,B 2 6#4 9' 5 6444 .<G
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       1 ,B 2 %$ 9'8 /F 2 ## E8  < 5 #44 < %444 +
  .F ,B 2 %$ 9'8    # .
          1F ,B 2 %$ 9'8    %44 +
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          1F& ,B 2 6#4 9'8   5 64 +
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/ )BI*  6748      <   46$ < 44=$ ;<@
Typical Applications* / )BI*  6%48      <   46"$ < 447# ;<@
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)       * ,B I 34 J 6#4 9'
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       .    $4 8  86 < 6  #"44 < #444 .K
)   ,    0    L $ M 6$ N6* O
   * 0     : M 6$ N O
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1) -        '  -;; + =#
-;; + ="

SKKT SKKH

1 27-10-2020 MS © by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.

Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.

Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.

2 18-03-2011 STM © by SEMIKRON

SKKT 250, SKKH 250 THYRISTOR BRIDGE,SCR,BRIDGE

Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.

Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time

Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time

3 18-03-2011 STM © by SEMIKRON

RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 9 Gate trigger characteristics

Dimensions in mm

'  + =" -;;

'  + =# )-;;*

* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON

4 18-03-2011 STM © by SEMIKRON

Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.

Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.

Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.

2 27-10-2020 MS © by SEMIKRON
SKKT 250, SKKH 250

Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.

Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time

Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time

3 27-10-2020 MS © by SEMIKRON
Fig. 9 Gate trigger characteristics

Dimensions in mm

SKKT

SKKH

Semipack 3

4 27-10-2020 MS © by SEMIKRON