MM 305

MODEL CVD GROWTH OF

SILICON ON GLASS SUBSTRATE
Presented by Group 2

Akansha Padmane-210110084
Arnav Pandit-210110026
Shobhit Modgil-21d110017
Tushaar Jhamtani-210110110
Vedant Yadav-210110116
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 Introduction

Silicon on Glass Substrate

Chemical Vapour Deposition

Problem Description

Rate Limiting Step

Contents Model Construction

Constructing Rate Law

Regulatory Bodies

Comparison

Bonus Question

Advantages od AID and CVD

Refernces

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 Introduction
We are delighted to be here today to present on the topic of
'Modeling Chemical Vapor Deposition (CVD) Growth of Silicon on Glass
Substrates.' In this presentation, we will delve into the fascinating
world of CVD processes and explore the kinetics behind silicon
deposition on glass substrates.
Throughout this presentation, we will answer some fundamental
questions related to the process:
1. How do CVD reactors work, and what are the key reactions
involved?
2. What is the detailed reaction mechanism for silicon growth on
the substrate surface?
3. How can we formulate the kinetic expression for silicon
deposition rates in nanometers per second (nm/s)?
And, as a bonus, we will also explore the impact of impurities,
particularly water vapor, on the deposition process.
So, let's dive in and uncover the science behind this essential
manufacturing technique.

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Silicon on Glass Substrate
Objective: Deposition of a silicon (Si) thin film onto a glass substrate for various applications, including
electronics, photovoltaics, and optical coatings.

Process: Chemical Vapor Deposition (CVD) is commonly used for silicon deposition

Precursor Gas: Silicon deposition typically involves using precursor gases like silicon tetrachloride (SiCl4) or silane (SiH4).
Reaction Mechanism: The deposition process involves the reaction of precursor gases on the glass
surface. In the case of SiCl4, it can dissociate into SiCl2 and Cl2, which then react with the glass surface
to deposit silicon.
Film Thickness: The thickness of the deposited silicon film can be controlled by adjusting the deposition
time and precursor gas flow rates.
Applications: Silicon-on-glass substrates find applications in the manufacturing of thin-film transistors
(TFTs), solar cells, sensors, MEMS (Micro-Electro-Mechanical Systems), and various optical devices.
Post-Processing: Depending on the application, post-processing steps such as doping, annealing, and
patterning may be required to achieve the desired electrical or optical properties.

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Chemical Vapor Deposition
(CVD)
Chemical Vapor Deposition (CVD) is a widely used technique in materials
science and semiconductor manufacturing for depositing thin films of
various materials onto substrates.

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Chemical Vapor Deposition
(CVD)
Introduction of Precursor Gases: In a CVD reactor, precursor gases are introduced into a controlled
environment. These gases can include reactive chemicals, such as silane (SiH4), dichlorosilane
(SiH2Cl2), or silicon tetrachloride (SiCl4), depending on the material being deposited. In your
specific case, SiCl4 is used for silicon deposition.
Gas Decomposition: The precursor gases are subjected to energy input, often through heating or plasma,
which breaks down these molecules into reactive species. For example, SiCl4 can dissociate into SiCl2 and Cl2.
Adsorption: The reactive species are adsorbed onto the substrate's surface. The substrate, in your case, is a glass
surface. These adsorbed species interact with the substrate's surface atoms
Surface Reaction: The adsorbed species react with the surface atoms of the substrate to form solid material. In your
⇌
example reaction, SiCl2(g) ∙ S + 2H ∙ S Si(s) + 2HCl(g) + 2S, silicon is deposited on the glass surface. This is the desired
deposition reaction.
By-Product Removal: Any by-products or unreacted gases are removed from the reactor to prevent them from interfering
with the deposition process.

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 Chemical Vapor Deposition
(CVD)
Film Growth: The reaction continues, and a thin film of the desired
material (in this case, silicon) accumulates on the substrate's surface.

Control and Monitoring: Throughout the process, parameters like

temperature, pressure, gas flow rates, and energy input are carefully
controlled and monitored to ensure precise control over the
deposition process and the properties of the deposited film.
CVD is a versatile technique, and the choice of precursor gases and reaction
conditions can be tailored to deposit a wide range of materials with varying
properties, including semiconductors, metals, and insulators. It plays a critical role in
the production of integrated circuits, solar cells, optical coatings, and various other
advanced materials used in modern technology.
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Chemical Vapor Deposition
(CVD)

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Problem Description
Proposed Mechanism:

Gas Phase dissociation 1 :

Adsorption 1 :

Adsorption 2 :
Surface Reaction (Rate Limiting Step):

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Reaction at Atomic Level

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Constructing rate law:
Site balance

Let fv and ∑ fi.s be the normalised Cv and Ci.s wrt Ct

And we know, fv + ∑ fi.s = 1

In this case, For dissociation reaction,

For adsorption of SiCl2 , Since rAD/kSi ≈ 0,

For adsorption of H2, Since rAD/kSi ≈ 0,

Surface reaction (assumed as rate limiting step)

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Solutions of the Equations:
Substituting values of fSiCl2 and fH.S :

we have established a mathematical relationship between

the deposition rate of Si and the concentrations of species
of the reaction. We can further simplify this equation to get
a rate in terms of P(SiCl4)

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 Bonus If the H2 gas used for Si deposition
contains H2O (g) at concentration >

Question 1 ppm (or higher than the

acceptable H2O concentration in H2

Attempt process gas used in typical CVD

process), write down potential
surface reaction mechanisms in the
resulting deposition.

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Atomic Layer Deposition (ALD) is an effective method similar to Chemical Vapor
Deposition (CVD). However, in ALD, the reaction is split into two separate stages,
ensuring that the precursor materials do not mix during the process. Initially, a
precursor gas is introduced into the chamber, forming a single layer on the surface of
the wafer. Following this, a second precursor gas is added, which reacts with the first
layer to create a thin film on the wafer's surface.
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Reaction Mechanism

Step-1

Step-2

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Advantages of AID of a CVD

Stoichiometric films with large area uniformity and 3D conformality.

Precise thickness control.
Low temperature deposition possible.
Gentle deposition process for sensitive substrates.

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References
https://aip.scitation.org/doi/abs/10.1063/1.1436294
https://doi.org/10.1016/B978-012524975-1/50009-4
Fogler, H.S. (2006) Elements of Chemical Reaction Engineering.
4th Edition, Prentice-Hall Inc., New Jersey.
MM474 slides by Rajiv Dusane

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Thank you

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