EC3353 QB 01 2MARKS - by LearnEngineering - in

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Department of Electrical and Electronics Engineering

EC3353 -Electron Devices and Circuits
II year III Sem
Two marks question with answer
Unit I
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1.Define diffusion current.
g.i
A movement of charge carriers due to the concentration gradient in a semiconductor is called
process of diffusion. When charge carriers move, the current is constituted in a bar. This current
due to diffusion is called diffusion current.
rin
2. What is meant by zener break down?
ee
When a PN junction is heavily doped, the depletion region is very narrow. So under reverse bias
condition, the electric field across the depletion region is intense. Such an intense field is enough
to pull the electrons out of the valence band of the stable atoms. Such a creation of free electrons
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is called zener effect. These minority carriers constitute very large current and the mechanism is
called zener break down.
En
3. List the diode parameters

Bulk resistance
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Static resistance
Dynamic resistance
Reverse resistance
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Knee voltage
Break down voltage
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Reverse current or leakage current

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4. Compare the silicon and germanium diodes with respect to cut in voltage and reverse
saturation current.
The barrier potential for germanium diode is 0.3 V. so the cut-in-voltage of germanium diode is
greater then 0.3 V and the barrier potential of silicon diode is 0.7 V. So the cut-in-voltage of
silicon diode is greater than 0.7 V.
5. A silicon diode has a saturation current of 7.5A at room temperature 300K. calculate the
saturation current at 460 K.
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Given: I01 = 7.5μA = 7.5 * 10-6

T1 = 300 K , T2 = 460 K
∆T = T2 – T2 = 460 – 300
∆T = 160 K
I02 = 2(∆T/10)
* I02 = 2(160/10) * 7.5 * 10-6
I02 = 0.49152 A
.in
6. Differentiate between drift and diffusion currents.
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Drift current Diffusion current
It is developed due to potential gradient It is developed due to charge concentration
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gradient
This phenomenon is found both in metals
and semiconductors
e This is found only in semiconductors
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7. List the diode parameters
Bulk resistance
En
Static resistance
Dynamic resistance
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Reverse resistance
Knee voltage
Break down voltage
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Reverse current or leakage current

8. Compare the silicon and germanium diodes with respect to cut in voltage and reverse
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saturation current.
The barrier potential for germanium diode is 0.3 V. so the cut-in-voltage of germanium diode is
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greater then 0.3 V and the barrier potential of silicon diode is 0.7 V. So the cut-in-voltage of
silicon diode is greater than 0.7 V.
9. What is meant by depletion region?
In PN junction, the diffusion of holes and electrons start initially. Near the junction, holes
recombine in N-region to form immobile positive ions. Similarly electrons recombine in P-
region to form immobile negative ions. With sufficient accumulation of such immobile ions on
both sides, the diffusion stops. So near the junction, there exists a region in which immobile
positive and negative charge reside while mobile charge carriers in this region get completely
depleted. This region is called depletion region.

10. Define the transition capacitance of the diode.

A capacitance existing at the PN junction when the diode is reverse biased where the two regions
act as the plates while the depletion region acts as dielectric is called a transition capacitance of a
diode.
11. Why a series resistor is necessary when a diode is reverse biased?

A series resistor is necessary when a diode is reverse biased for limiting the forward current
which increases exponentially with voltage.
.in
12. List any four applications of light emitting diode.
ng
 All kinds of visual displays
 In the optical devices such as optocouplers
eri
 As on-off indicator in various types of electronic circuits.
 Remote control. burglar alarm
e
gin
13. List the important characteristics of a voltage regulator.
The output voltage is fixed at a specified value; the unregulated voltage must be at least 2V more
than the regulated voltage.
En
14. Differentiate between avalanche and zener break down.

Zener break down Avalanche breakdown
Breakdown occurs due to heavily doped Breakdown occurs due to avalanche
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junction and applied strong electric field multiplication between thermally generated
ions
Doping level is high Doping level is low
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Breakdown occurs at lower voltage compared Break down occurs at higher voltage
to avalanche breakdown
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15. List the PN diode switching times

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Recovery time
Forward Recovery time
Reverse Recovery time
Storage and transition time
16. Give the diode current equation.
I=Io[e v/ηVT – 1]
I = diode current

Io = reverse saturation current in amperes

V = applied voltage
η = 1 for germanium diode, 2 for silicon diode
17. Define barrier potential at the junction.
Due to immobile positive charges on n- side and negative charges on p- side, there exists an
electric field across the junction. This creates potential difference across the junction which is
called barrier potential, junction potential, built-in potential or cut-in voltage o PN junction.
.in
18.Define the cut-in-voltage and peak inverse voltage of pn junction diode.
When diode is farward biased, some voltage is necessary to overcome the barrier potential ,to
make diode conduct. This is called cut-in-voltage. In reverse bias opposite polarity appears
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across diode. The maximum diode voltage which diode can withstand without break down is
called peak inverse voltage.
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19. Define diffusion capacitance.
Diffusion Capacitance is the capacitance due to transport of charge carriers between two
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terminals of a device, for example, the diffusion of carriers from anode to cathode in forward
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bias mode of a diode or from emitter to base forward-biased junction for a transistor. In a
semiconductor device with a current flowing through it (for example, an ongoing transport of
charge by diffusion) at a particular moment there is necessarily some charge in the process of
transit through the device.
En
20. What is a rectifier and list it types.

Rectifier is an electrical device which converts an alternating current into a direct one by
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allowing a current to flow through it in one direction only.

They are classified in to half wave rectifier and full wave rectifier. Full wave rectifier again
classified as center tapped and bridge rectifier.
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Unit II
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1. Why do we choose q point at the center of the loadline?

The operating point of a transistor is kept fixed usually at the center of the active region in order
that the input signal is well amplified. If the point is fixed in the saturation region or the cut off
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region the positive and negative half cycle gets clipped off respectively.
2. Name the two techniques used in the stability of the q point .explain.
Stabilization technique: This refers to the use of resistive biasing circuit which allows IB to vary
so as to keep IC relatively constant with variations in Ico, and VBE.
Compensation techniques: This refers to the use of temperature sensitive devices such as
thermistors diodes. They provide compensating voltages & currents to maintain operating point
constant.

3. List out the different types of biasing.

• Voltage divider bias
• Base bias
• Emitter feedback bias
• Collector feedback bias
4. What do you meant by thermal runway?
Due to the self heating at the collector junction, the collector current rises. This cause damage to
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the device. This phenomenon is called thermal runway.
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5. Why is the transistor called a current controlled device?
The output characteristics of the transistor depend on the input current. So the transistor
is called a current controlled device.
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6. Define current amplification factor?
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It is defined as the ratio of change in output current to the change in input current at
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constant other side voltage.
7. What are the requirements for biasing circuits?

En
· The q point must be taken at the Centre of the active region of the output
characteristics.
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· Stabilize the collector current against the temperature variations.

· Make the q point independent of the transistor parameters.
· When the transistor is replaced, it must be of same type.
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8. When does a transistor act as a switch?

w.
The transistor acts as a switch when it is operated at either cutoff region or saturation
region.
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9. What is biasing?
To use the transistor in any application it is necessary to provide sufficient voltage and
current to operate the transistor. This is called biasing.
10. What is operating point?
For the proper operation of the transistor a fixed level of current and voltages are required. This
value of currents and voltages defined at a point at which the transistor operate is called
operating point.

11. What is stability factor?

Stability factor is defined as the rate of change of collector current with respect to the rate of
change of reverse saturation current.
12. What is d.c load line?

The d.c load line is defined as a line on the output characteristics of the transistor which gives the
value of Ic & Vce corresponding to zero signal condition.
.in
13. What are the advantages of fixed bias circuit?
This is simple circuit which uses a few components. The operating point can be fixed anywhere
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on the Centre of the active region
eri
14. Explain about the various regions in a transistor?
The three regions are active region saturation region cutoff region.
e
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15. Explain about the characteristics of a transistor?
Input characteristics: it is drawn between input voltage & input current while keeping output
voltage as constant.
En
Output characteristics: It is drawn between the output voltage &output current while
keeping input current as constant.
arn
16. What is reverse saturation current?

The current due to the minority carriers is called the reverse saturation current.
Le
17. Will a transistor result if two diodes are connected back to back?
w.
A transistor has two p-n junctions. One junction is between the emitter and the base and is called
emitter base junction and the other junction is between the base and the collector and is called
collector base junction. Thus transistor is like two pn junction diodes connected back to back.
ww
18. State early effect. What are the consequences of it?

In the common Base characteristics of BJT when reverse bias voltage VcB increases, the width
of the depletion region also increases. This reduces the electrical base width. This effect is called
“Early Effect” or “Base width modulation”. The Early effect has two consequences.There is less
chance of recombination within the base region. The charge gradient is increased within the base
and consequently the current of the minority carriers injected across the junction increases.

19. What is thermal runaway?

In a power transistor the increase in collector current increases the power dissipated at the
collector junction. This, in turn further increases the temperature of the junction and hence
increases the collector current. The process is cumulative and it is referred to as self heating. The
excess heat produced at the collector base junction may even burn and destroy the transistor. The
situation is called “Thermal runaway” of the transistor.
20. Define the delay time and rise time in the switching characteristics of transistor.
.in
In the transistor switching characteristics the deley time is the time that elapses the application of
the input pulse and current to rise to 10 percent of its maximum value. The time required for Ic to
reach 90% of its maximum level from 10% level is called the rise time.
ng
21. When a transistor is used as a switch, in which region of output characteristics it is operated?
eri
When a transistor is used as a switch it is operated alternately in the cut off region and saturation
region of the output characteristics
e
22. Write the relation between Ic, β, IB and IcBo in a BJT.
gin
In the active region: IC = β IB + (1+ β)ICO
In the cut-off region: IC = (1+ β)ICO
En
ICBO is the collector current when the emitter current is zero. ICBO is greater than ICO
23. Define α and β of a transistor.

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α: It is defined as the ratio of the collector current resulting from carrier

injection to the total emitter current
Le
α = IC /IE
β: it is defined as the ratio of collector current to base current.
w.
β = IC /IB
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24. In a bipolar transistor which region is wider and which region is thinner? Why?
The middle region of bipolar junction transistor is called as the base of the transistor. Input signal
of small amplitude is applied to the base. This region is thin and lightly doped The magnified
output signal is obtained at the collector. This region is thick and heavily doped.
25. For a npn transistor IE = 12ma and β = 140. Determine the value of IB and Ic.
Ans: IE = (1+ β) IB
IB = IE / (1+ β)

= 12mA / (1+140)
= 85.1 mA
Ic = β IB = 140 * 85.1 mA = 11.914 mA
26. Determine β and IE for a transistor if IB = 50A and Ic = 3.6 mA.

Ans: I β = Ic/IB = 3.6 mA/50 A = 72
IE = IB + Ic = 50 microA + 3.6 mA = 3.65 mA
.in
27. Why is FET called a unipolar device?
ng
In FET current is carried by only one type of charge particles, either electrons or holes. Hence
FET is called unipolar device.
eri
28. How can a FET be used as a voltage controlled resistor?
In FET , the voltage applied between gate and source controls the drain current ID. Therefore,
FET is a voltage controlled device.
e
gin
29. What are the advantages of FETs?
••• In FET input resistance is high compared to BJT
En
••• Construction is smaller than BJT

••• Less sensitive to changes in applied voltage
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••• Thermal stability is more

••• Thermal runaway does not exist in JFET
••• Thermal noise is much lower
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30. Define amplification factor in JFET.

w.
It is defined as the ratio of change in drain-source voltage VDS to the change in gate-source
voltage VGS at constant drain current ID. It is also called mutual conductance
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31. Mention the three regions that are present in the drain source characteristics of JFET
••• Saturation region
••• Break down region
••• Ohmic region

32. What is pinch-off voltage in FET?

In the VI characteristics of JFET, at some value of VDS, drain current ID cannot be increased
further, due to reduction in channel width. Any further increase in VDS does not increase the
drain current ID. ID approaches the constant saturation value. The voltage VDS at which the
current ID reaches to its constant saturation level is called “ Pinch-off voltage”, Vp
33. What are the parameters that control the Pinch off voltage?
Electron charge, donor or acceptor concentration, permittivity of channel material and half
.in
width of channel bar.
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34. List the characteristics of JFET.
••• Drain characteristics
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••• Transfer characteristics
35. Differentiate between BJT and JFET

e
gin
Sl.no BJT FET
1 Current controlled device Voltage controlled device
2 Bipolar device Unipolar device
En
3 Less input resistance Input resistance greater than BJT

4 Less thermal stability High thermal stability
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5 More thermal noise Less thermal noise
36. Give the drain current equation of JFET.

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ID = IDSS (1 – VGS /Vp)2

ID = drain current
w.
IDSS = saturation drain current

VGS = gate source voltage
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VP = pinch-off voltage
37. Why MOSFET is called IGFET?

MOSFET is constructed with gete terminal insulated from the channel. So it is also called as
insulated gate FET or IGFET.

38. Comparison between JFET and MOSFET

JFET MOSFET
Gate is not insulated from channel of SiO2 Gate is insulated from channel by a thin
layer
There are two types – N-channel and P-channel Four types p & n channel- enhancement and
depletion
.in
Cannot be operated in depletion and enhancement modes Can be operated in depletion and
enhancement
modes
ng
There is a continuous channel There is a continuous channel only in
depletion type, but not in enhancement type
eri
39. List the JFET parameters.
••• Transconductance (gm)
e
gin
••• Input resistance and capacitance
••• Drain to source resistance (rd)
••• Amplification factor ()
En
40. Define intrinsic stand off ratio of UJT and draw its equivalent circuit
The resistance ratio rB1/rBB is an important characteristics of UJT. It is known as the “intrinsic
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stand-off ratio” and is designated by “η”

Hence η = rB1/rB2 = rB1/(rB1 + rB2)
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41. Why IGBT is very popular nowadays?

a. Lower gate requirements
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b. Lower switching losses

c. Smaller snubber circuit requirements
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42. What are the different methods to turn on the thyristor?

a. Forward voltage triggering
b. Gate triggeringc. dv/dt triggeringd. Temperature triggeringe. Light triggering
43. IGBT is a voltage controlled device. Why?
Because the controlling parameter is gate-emitter voltage

44. How can a thyristor turned off?

A thyristor can be turned off by making the current flowing through it to zero.
45.Define latching current?

The latching current is defined as the minimum value of anode current which it mustattain
during turn on process to maintain conduction when gate signal is remove
.in
46. Define holding current?
The holding current is defined as the minimum value of anode current below which itmust fall
to for turning off the thyristor.
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Unit III
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1. What are the tools used for small signal analysis of BJT?
Vi = hi Ii + hr Vo e
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Io = hf Ii + ho Vo
hi : input resistance
En
Ii : input current
hr : reverse voltage transfer ratio
ho : output admittance
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Vi : input voltage
Vo : output voltage
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The above parameters are required for drawing the equivalent circuit which is necessary for the
small signal analysis of BJT.
w.
2. Give the current gain expression for a common emitter transistor configuration.
Ai= IC/IB = -hfe/( 1+hoeRL)
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3.Which of the BJT configuration is suitable for impedance matching application?

Common emitter configuration is used in impedance matching application because the ratio of
output resistance to input resistance is small and may range from 10 Ω to 100 Ω. This makes the
configuration an ideal for coupling between various transistor stages
4. What is the necessary of the coupling capacitor?

It is used to block the c signal to the transistor amplifier. It allows a c &blocks the d c.
5. Why is the operating point selected at the Centre of the active region?
The operating point is selected at the Centre of the active region to get to perfect
amplification. Moreover there is no distortion.
6. What is an amplifier?
.in
An amplifier is a device which produces a large electrical output of similar characteristics to that
of the input parameters.
ng
7. How are amplifiers classified according to the input?
eri
1 Small – signal amplifier 2. Large – signal amplifier
e
8. How are amplifiers classified according to the transistor configuration?
gin
1. Common emitter amplifier 2. Common base amplifier 3. Common collector amplifier
En
9. What is the different analysis available to analyze a transistor?

1. AC analysis 2. DC analysis
arn
10. How can a DC equivalent circuit of an amplifier be obtained?

By open circuiting the capacitor.
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11. How can a AC equivalent circuit of a amplifier be obtained?

w.
By replacing dc supply by a ground and short-circuiting capacitors.

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Unit IV
1.What is differential amplifier
An amplifier which amp[lifies the difference between two input signal is called differential
amplifier
2.Define Common Mode Rejection Ratio.

The relative sensitivity of an op-amp to a difference signal as compared to a common mode
signal is called common-mode and gives the figure of merit for the differential amplifier.

CMRR, ñ =|Ad/Ac|
3.What is a tuned amplifier?

The amplifier with a circuit that is capable of amplifying a signal over a narrow band of
frequencies are called tuned amplifiers.
4. What is the classification of tuned amplifiers?
.in
Single tuned, Double tuned, Stagger tuned
ng
5. What is a single tuned amplifier?
A single tuned amplifier circuit that uses a single parallel tuned circuit as a load is called single
tuned amplifier.
eri
6. What are the advantages of tuned amplifiers?
• They amplify defined frequencies. e
gin
• Signal to noise ratio at output is good
• They are suited for radio transmitters and receivers
En
7. What are the disadvantages of tuned amplifiers?

· The circuit is bulky and costly
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· The design is complex.

· They are not suited to amplify audio frequencies.
Le
8. What is neutralization?
w.
The effect of collector to base capacitance of the transistor is neutralized by introducing a signal
that cancels the signal coupled through collector base capacitance. This process is called
neutralization.
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9. What are double tuned amplifiers?

The amplifiers having two parallel resonant circuit in its load are called double tuned amplifiers.
10. What is a stagger tuned amplifier?

It is a circuit in which two single tuned cascaded amplifiers having certain bandwidth are taken
and their resonant frequencies are adjusted that they are separated by an amount equal to the

bandwidth of each stage. Since resonant frequencies are displaced it is called stagger tuned
amplifier.
11. What are the advantages of stagger tuned amplifier?

The advantage of stagger tuned amplifier is to have better flat, wideband characteristics.
12. What are the advantages of double tuned over single tuned?
.in
1. Possess flatter response having steeper sides
2. Provides larger 3 db bandwidth
ng
3. Provides large gain-bandwidth product.
eri
13. What happens to the circuit above and below resonance?
Above resonance the circuit acts as capacitive and below resonance the circuit acts as
inductive.
e
gin
14. What are the different coil losses?
Hysteresis loss
En
Copper loss
Eddy current loss
arn
15. What is Q factor?

It is the ratio of reactance to resistance.
Le
16. What is dissipation factor?

w.
It is referred as the total loss within a component i.e1/Q

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17. What is unloaded Q?

It is the ratio of stored energy to the dissipated energy in a reactor or resonator.
18. What is the need of cascading of amplifiers?
The output of one amplifier is the input to another stage. In this way the overall voltage gain
can be increased, when number of amplifier stages are used in succession it is called a multistage
amplifier or cascade amplifier. The load on the first amplifier is the input resistance of the
second amplifier.

Unit V
1. Give the expression for stability factor.
S= (1+β) / [(1- β)(δ IB/ δIC)]
2. What is feed back?

It is the process of injecting some energy from the output and then returns it back to the input.
.in
3. What are feedback amplifiers?
An amplifier which uses feedback principle is called as feedback amplifiers.
ng
4. What are the types of feed back?
eri
1. Positive feedback 2. Negative feedback.
5. What is positive feedback?

e
gin
If the feedback signal is applied in such a way that it is in phase with the input signal and thus
increases it is said to be positive feedback.
En
6. What is negative feedback?

If the feedback signal is applied in such a way that it is out of phase with the input
signal and thus decreases it is said to be positive feedback.
arn
7. Which feedback decreases the gain of the amplifier?

Le
Negative feed back

w.
8. Which feedback increases the gain of the amplifier?

Positive feedback
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9. What is the advantage of negative feedback?

1. Increased stability 2. Increased bandwidth 3. Decreased noise 4. Less frequency
distortion
10. What is the disadvantage of negative feedback?

Reduces amplifier gain.

11. Define sensitivity.

It is the ratio of percentage change in voltage gain with feedback to the percentage change in
voltage gain without feedback.
12. Define Desensitivity.

It is the ratio of percentage change in voltage gain without feedback to the percentage change in
.in
voltage gain with feedback. The reciprocal of sensitivity.
13. What are the conditions for sustained oscillator or what is Barkhausen criterion?
ng
Condition for sustained oscillation,
eri
a. Magnitude condition |Avβ| = 1
b. Phase condition <Avβ= 0°
e
These conditions are called as Barkhausen criterion.
gin
14. What is Oscillator circuit?
En
A circuit with an active device is used to produce an alternating current is called an oscillator
circuit.
arn
15. What are the classifications of Oscillators?

*Based on wave generated:
i. Sinusoidal Oscillator,
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ii. Non-sinusoidal Oscillator or Relaxation Oscillator

Ex: Square wave, Triangular wave, Rectangular wave etc.
w.
*According to principle involved:

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i. Negative resistance Oscillator, ii. Feedback Oscillator.
*According to frequency generated: i. Audio frequency oscillator 20 Hz – 20 kHz

ii. Radio frequency Oscillator 30 kHz – 30 MHz
iii. Ultrahigh frequency Oscillator 30 MHz – 3 GHz
iv. Microwave Oscillator 3 GHz – above.

* Crystal Oscillators.
15. What are the types of feedback oscillators?

* RC-Phase shift Oscillator,
* LC-Oscillators
i. Tuned collector Oscillator
.in
ii. Tuned emitter Oscillator
iii. Tuned collector base Oscillator
ng
iv. Hartley Oscillator
v. Colpits Oscillator
eri
vi. Clap Oscillator
16. What are the conditions for oscillation?

e
gin
The total phase shift of an oscillator should be 360o. For feedback oscillator it should satisfies
Barhausen criterion.
En
17. Define Piezoelectric effect.

When applying mechanical energy to some type of crystals called piezoelectric crystals the
mechanical energy is converted into electrical energy is called piezoelectric effect.
arn
18. Mention the features of crystal oscillator

Le
••• It is a tuned-circuit oscillator

••• It uses piezoelectric crystal as its resonant tank circuit
••• It is preferred when greater frequency stability is required
w.
••• Used in watches communication transmitters and receivers etc.

ww
19. What are the advantages of crystal oscillator?

••• Good frequency stability
••• Good temperature stability
••• Quartz crystal is used which is inexpensive and easily available in nature
20. What is Miller crystal oscillator? Explain its operation.

It is nothing but a Hartley oscillator its feedback Network is replaced by a crystal. Crystal
normally generate higher frequency reactance due to the miller capacitance are in effect between
the transistor terminal.
21. State the frequency for RC phase shift oscillator.

The frequency of oscillation of RC-phase shift oscillator is
F=1/2πRC (4k+6)
.in
Where k=2.639.
22. What is the expression for resonant frequency?
ng
fr=1/2π√ LC
23. State the Barkhausen criterion for an oscillator.
eri
1. The loop gain is equal to unity in absolute magnitude
e
2. The phase shift around the loop is zero or an multiple of integer 2π:
gin
En
arn
Le
w.
ww


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Department of Electrical and Electronics Engineering

3. List the diode parameters

Reverse current or leakage current

Downloaded From : www.EasyEngineering.net

Given: I01 = 7.5μA = 7.5 * 10-6

Reverse current or leakage current

Downloaded From : www.EasyEngineering.net

10. Define the transition capacitance of the diode.

11. Why a series resistor is necessary when a diode is reverse biased?

14. Differentiate between avalanche and zener break down.

15. List the PN diode switching times

Downloaded From : www.EasyEngineering.net

Io = reverse saturation current in amperes

20. What is a rectifier and list it types.

allowing a current to flow through it in one direction only.

1. Why do we choose q point at the center of the loadline?

Downloaded From : www.EasyEngineering.net

3. List out the different types of biasing.

7. What are the requirements for biasing circuits?

· Stabilize the collector current against the temperature variations.

8. When does a transistor act as a switch?

Downloaded From : www.EasyEngineering.net

11. What is stability factor?

12. What is d.c load line?

16. What is reverse saturation current?

18. State early effect. What are the consequences of it?

Downloaded From : www.EasyEngineering.net

19. What is thermal runaway?

23. Define α and β of a transistor.

α: It is defined as the ratio of the collector current resulting from carrier

Downloaded From : www.EasyEngineering.net

26. Determine β and IE for a transistor if IB = 50A and Ic = 3.6 mA.

••• Construction is smaller than BJT

••• Thermal stability is more

30. Define amplification factor in JFET.

Downloaded From : www.EasyEngineering.net

32. What is pinch-off voltage in FET?

35. Differentiate between BJT and JFET

3 Less input resistance Input resistance greater than BJT

5 More thermal noise Less thermal noise

36. Give the drain current equation of JFET.

ID = IDSS (1 – VGS /Vp)2

IDSS = saturation drain current

37. Why MOSFET is called IGFET?

Downloaded From : www.EasyEngineering.net

38. Comparison between JFET and MOSFET

stand-off ratio” and is designated by “η”

41. Why IGBT is very popular nowadays?

b. Lower switching losses

42. What are the different methods to turn on the thyristor?

Downloaded From : www.EasyEngineering.net

44. How can a thyristor turned off?

45.Define latching current?

3.Which of the BJT configuration is suitable for impedance matching application?

4. What is the necessary of the coupling capacitor?

Downloaded From : www.EasyEngineering.net

9. What is the different analysis available to analyze a transistor?

10. How can a DC equivalent circuit of an amplifier be obtained?

11. How can a AC equivalent circuit of a amplifier be obtained?

By replacing dc supply by a ground and short-circuiting capacitors.

2.Define Common Mode Rejection Ratio.

Downloaded From : www.EasyEngineering.net