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  • High-Diode-SS56 C466505

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    marthinus yesyurun
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    This document summarizes the specifications and characteristics of SMAG plastic-encapsulated diodes. The diodes have a repetitive peak reverse voltage ranging from 20V to 200V and can handle surge currents up to 150A. They are suitable for use as rectifiers and their cathode is denoted by a color band. Key electrical characteristics include forward voltage, reverse current, and thermal resistance. Typical performance curves show forward and reverse characteristics under varying temperature and voltage conditions. Packaging and taping specifications are also provided.

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    1912171424_High-Diode-SS56_C466505

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    This document summarizes the specifications and characteristics of SMAG plastic-encapsulated diodes. The diodes have a repetitive peak reverse voltage ranging from 20V to 200V and can handle surge currents up to 150A. They are suitable for use as rectifiers and their cathode is denoted by a color band. Key electrical characteristics include forward voltage, reverse current, and thermal resistance. Typical performance curves show forward and reverse characteristics under varying temperature and voltage conditions. Packaging and taping specifications are also provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    8 views4 pages

    High-Diode-SS56 C466505

    Uploaded by

    marthinus yesyurun
    This document summarizes the specifications and characteristics of SMAG plastic-encapsulated diodes. The diodes have a repetitive peak reverse voltage ranging from 20V to 200V and can handle surge currents up to 150A. They are suitable for use as rectifiers and their cathode is denoted by a color band. Key electrical characteristics include forward voltage, reverse current, and thermal resistance. Typical performance curves show forward and reverse characteristics under varying temperature and voltage conditions. Packaging and taping specifications are also provided.

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    of 4

    SS52 THRU SS520

    SMAG Plastic-Encapsulate Diodes

    Features
    ●Io 5A
    SMAG
    ●VRRM 20V-200V
    ●High surge current capability
    ● Polarity: Color band denotes cathode

    Applications
    ● Rectifier
    Marking
    ● SS5X
    X : From 2 To 20

    SS5
    Item Symbol Unit Test Conditions
    2 3 4 5 6 8 10 15 20
    Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 150 200

    Maximum RMS Voltage VRMS V 14 21 28 35 42 56 70 105 140

    Average Forward Current 60HZ Half-sine wave, Resistance


    IF(AV) A load, TL(Fig.1) 5.0

    Surge(Non-repetitive)Forward 60Hz Half-sine wave ,1 cycle ,


    Current IFSM A 150
    Ta =25℃

    Junction Temperature TJ ℃ -65~+125 -65~+150

    Storage Temperature TSTG ℃ -65 ~ +150

    Electrical Characteristics (Ta=25℃ Unless otherwise specified）


    SS5
    Item Symbol Unit Test Condition
    2 3 4 5 6 8 10 15 20
    Peak Forward Voltage VF V IF =5.0A 0.55 0.7 0.85 0.95
    IRRM1 Ta =25℃ 0.5 0.1
    Peak Reverse Current mA VRM=VRRM
    IRRM2 Ta =100℃ 10 0.5
    1)
    RθJ-A Between junction and ambient 55
    Thermal ℃/
    Resistance(Typical) W 1)
    RθJ-L Between junction and terminal 17

    Notes:
    Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
    pad areas

    1
    High Diode Semiconductor
    Typical Characteristics

    FIG.1: FORWARD CURRENT DERATING CURVE FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT

    IFSM(A)
    IO(A)

    6.0 150
    SS52-SS54

    SS55-SS520
    5.0 8.3ms Single Half Sine Wave
    120 JEDEC Method

    4.0

    90

    3.0

    60
    2.0

    1.0 Resistive or Inductive Load 30


    P.C.B. Mounted on 0.2"×0.2"
    (5mm× 5mm)Copper Pad Areas

    0
    0 0
    25 50 75 100 125 150 1 2 10 20 100
    TL(℃) Number of Cycles

    FIG.3: TYPICAL FORWARD CHARACTERISTICS FIG.4：TYPICAL REVERSE CHARACTERISTICS


    IF(A)

    100
    IR(mA)

    100
    TJ=25 ℃ SS52-SS56
    Pulse width=300us SS58-SS520
    1% Duty Cycle

    10
    10
    Tj=125℃
    5.0

    1.0

    1.0
    Tj=75℃

    0.1
    SS52-SS54
    SS55-SS56
    0.1
    SS58-SS510
    SS515-SS520 0.01

    Tj=25℃

    0.01 0.001
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100
    VF(V) Voltage(%)

    High Diode Semiconductor 2


    SMAG

    0.106(2.70)
    0.096(2.45)

    SMAG

    4.12

    1.8

    JSHD
    JSHD

    High Diode Semiconductor 3


    Reel Taping Specifications For Surface Mount Dev ices- SMAG

    279 2.0 (11 0.079)

    75 1.0 2.95 0.039

    High Diode Semiconductor 4

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