mraza.buke@bahria.edu.pkSwitch Realization & e ane SPST switch, with Se me a fh voltage and frag) polarities we v 7 with SPDT | paint Lift) Vi ROST ai = ~»Y ith two SPST switches: 0 Ay i A Lit) +h All power semicondt V, devices function,as SPST switches. <)Realization of SPDT switch using two SPST switches » Anontrivial step: to RG etches are not exact one SPDT switch It is possible for both*SPST switches to “& OFF eously ON or Behavior of rents een discontinuous conductit Conducting state of SPST switel y on applied voltage or current —for example: diode In the de-de buck conv ch A must block positive voltage Vg when in the off state a st conduct positive current i, when in the on state Tf, for all inten: nv¥erter operating points, the current and lie in a single quadrant of the plane, then the plemented in a simple manner using a transistor or ECTRONICSfew Quadrants of SPST oe operation a & 1 we te ; [ j SS single-quadrant switch example: v 0 ae ON-state: i > 0 OFF-state: v > 0Single- quadrant switch Voltage- bidirectional two-quadrant switch Four- quadrant ———_ switchSingle-quadrant switches a Zz 1 A we tn: Switch state is exclusively third terminal henah I). i + Pastive switch: Switch s trolled by the li ent and/ ge at terminals / and 2. = SCR: A ial case -on transition is active, 3 while turn-off ition is passive. Single-quadi itch: on-state i(t) and off-state v(1) are we \Y >The Diode ce a RS a Veer le-quadrant switch: 7 Fe a conduct positive on- ps oY state current + 7? Q j Y off & + can block negative off- state voltage ~ Y provided that the intended on-state and off-state 0 operating points lie on the diode i-v characteristic, Symbol inst i-v characteristic then switch can be realized using a diodefootw BJT andIGBTs 4> - Sige switch, controlled inal C ingle-quadrant switch: can conduct positive on- state current can block positive off-state voltage provided that the intended on-state and off-state g operating points lie on the — inst i-v characteristic transistor i-v characteristic, 0 then switch can be realized e using a BJT or IGBTMOSFETs CP ew g Symbol instant t-v characteristic ® , controlled by . rmally operated as single- 3 ladrant switch: can conduct positive on-state current (can also conduct negative current in some circumstances) can block positive off-state voltage + provided that the intended on- state and off-state operating points lie on the MOSFET i-v characteristic, then switch can be realized using a MOSFET#. ae Realization of switch asing transistors and les wee. @ Buck converter example & AY te” Switch B: diode SPST switch operating pointsRealization of buck converter using single- quadrant switchesCurrent-bidirectional ¢wo-quadrant switch Jou 2 usual e ne led'by terminal C operated as two- Gaen switch: y an conduct positive or 8 negative on-state current * can block positive off-state voltage * provided that the intended on- state and off-state operating points lie on the composite i-v characteristic, then switch can be realized as shown BJT / anti-parallel i faneous i-v diode realization characteristicMOSFET body diodes. Ree Power woo Power MOSFET, Use of external diodes characteristic and its integral to prevent conduction e body diode of body diodeA simple inverter GC. 4Inverter: sinusoidal modulation of D 4 @ y(t) = (2D - A & Y D(t) = 0.5 + D,, sin (wt) The resulting inductor current variation is also sinusoidal: i= "= @n-n wy Hence, current-bidirectional two-quadrant switches are required.rex a J. The de-3Ph voltage sgurce inverter (VSI) OM * 1 Fc @ Switches must Nien voltage, and conduct ac load current. <:foie Bidirectional battery charger/ discharger 4 & > : Vous spaceeral main power bus Adc-de co! ith bidirectional power flow.Voltage-bidirectional fwo-quadrant nied + Ust tive switch, yy terminal C + Normally operated as two- rant switch: oY can conduct positive on-state y current + can block positive or negative off-state voltage provided that the intended on- State and off-state operating points lie on the composite i-v BUT /series taneous i-v characteristic, then switch can diode realization . aracteristic be realized as shown The SCR is such a device, without controlled turn-off 2A de-3Ph buck-boost inyerter @few Four-quadrant switches, ri & os S comstate ‘current an ml ‘switch, led by terminal C an conduct positive or negative on-state current + can block positive or negative off-state voltagefe Three ways to realize@ four-quadrant wae 4A 3Ph-3Ph matrix conyerter < 3oae input + All voltages and current: ac; hence, four-quadrant switches are required. + Requires nine four-quadrant switchesSynchronous rectifiers. & Replacement of with a backwards-cot Oy) in reduced conducti ideal switch conventic MOSFET as instantaneous i-v diode synchronous characteristic rectifierBuck converter with synchronous rectifier & sy SFET Q, is XO g ; controlled to turn on when diode would normally conduct Semiconductor conduction loss can be made arbitrarily small, by reduction of MOSFET on- » resistances Useful in low- voltage high-current applications> at Thank you fase time Ss Oy