-

MOHAMAD FIRAS BIN SHIK ABDULLA UR6523007

221372349 16/11/2023
v
DC voltages:
14.33 uA 9.7uA

1.433 mA 1.426 mA

1.45 mA 1.436 mA
4.8V 4.763 V
9.38 V 9.439 V
4.091 V

5.35 V 5.348 V

0V 0V
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6.3 DC Load Line [3 marks]
 7. DISCUSSION

Based on calculation and experimental values obtained, briefly discuss the finding. Then, interpret the DC Load Line for
a transistor
[3 marks]
In this lab, we discussed the theoretical and experimental result of BJT DC analysis circuit. We calculate the Ic, Ib, Ie and DC
voltages in the circuit by using the formula and compare it with the measured value of the experiment. By identifying the cutoff
and saturation region, we can identify the Q-point by plotting in the DC load line graph.

8. CONCLUSION
Conclude the operational of CE Amplifier based on Lab2 outcome and relate to the stated objectives.
[2 marks]
In conclusion, this lab focused on comparing the theoretical and practical result fo BJT DC analysis circuit to prove the behavior
of the transistor. It also include the calculation to find the Q-point in the DC load line graph to furthermore understand the
characteristic of the transistor.

9. REPORT SUBMISSION

The hardcopy of individual lab report must be submitted in 1-week time.

Instructor Approval

……………………………….
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 Semiconductor 2N3904
NPN Silicon Transistor

Descriptions
• General small signal application
• Switching application

Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with 2N3906

Ordering Information
Type NO. Marking Package Code

KST-9010-000 1
2N3904 2N3904 TO-92

Outline Dimensions unit : mm

KST-9010-000 2
 2N3904
Absolute maximum ratings Ta=25°C
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 60 V

Collector-Emitter voltage VCEO 40 V

Emitter-base voltage VEBO 6 V

Collector current IC 200 mA

Collector dissipation PC 625 mW

Junction temperature Tj 150 °C

Storage temperature range Tstg -55~150 °C

Electrical Characteristics Ta=25°C

Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V

Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V

Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 6 - - V

Collector cut-off current ICEX VCE=30V, VEB=3V - - 50 nA

DC current gain hFE VCE=1V, IC=10mA 100 - 300 -

Collector-Emitter saturation voltage VCE(sat) IC=50mA, IB=5mA - - 0.3 V

VCE=20V, IC=10mA,
Transition frequency fT 300 - - MHz
f=100MHz
Collector output capacitance Cob VCB=5V, IE=0, f=1MHz - - 4 pF

KST-9010-000 3
Delay time td - - 35 ns
VCC=3Vdc, VBE(off)=0.5Vdc.
Rise time tr IC=10mAdc, IB1=1mAdc - - 35 ns

Storage time ts - - 200 ns

VCC=3Vdc,IC=10mAdc,
Fall Time tf IB1=IB2=1mAdc - - 50 ns

2N3904
Electrical Characteristic Curves

Fig. 1 PC-Ta Fig. 2 hFE-IC

KST-9010-000 4
KST-9010-000 5