IPN80R2K0P7

MOSFET
800VCoolMOSªP7PowerTransistor PG-SOT223

Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.

Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio Drain
Pin 2, Tab

Benefits
Gate
•Best-in-classperformance Pin 1

•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts Source
•Easytodriveandtoparallel Pin 3

•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns

Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 800 V
RDS(on),max 2.0 Ω
Qg,typ 9 nC
ID 3 A
Eoss @ 500V 0.85 µJ
VGS(th),typ 3 V
ESD class (HBM) 1C -

Type/OrderingCode Package Marking RelatedLinks

IPN80R2K0P7 PG-SOT223 80R2K0 see Appendix A

Final Data Sheet 1 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet 2 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 3 TC=25°C
Continuous drain current1) ID A
- - 1.9 TC=100°C
Pulsed drain current2) ID,pulse - - 6.0 A TC=25°C
Avalanche energy, single pulse EAS - - 6 mJ ID=0.4A; VDD=50V
Avalanche energy, repetitive EAR - - 0.05 mJ ID=0.4A; VDD=50V
Avalanche current, repetitive IAR - - 0.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V
-20 - 20 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation Ptot - - 6.4 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Continuous diode forward current IS - - 1.1 A TC=25°C
Diode pulse current 2)
IS,pulse - - 6.0 A TC=25°C
Reverse diode dv/dt 3)
dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.47A,Tj=25°C
Maximum diode commutation speed 3)
dif/dt - - 50 A/µs VDS=0to400V,ISD<=0.47A,Tj=25°C

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - solder
RthJS - - 19.5 °C/W -
point
Thermal resistance, junction - ambient RthJA - - 160 °C/W Device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm2 (one
Thermal resistance, junction - ambient layer 70µm thickness) copper area
RthJA - - 75 °C/W
soldered on copper area for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
Tsold - - 260 °C reflow MSL1
soldering allowed

1)
DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5
2)
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
Final Data Sheet 3 Rev.2.1,2018-02-09
 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.05mA
- - 1 VDS=800V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=800V,VGS=0V,Tj=150°C
Gate-source leakage curent incl. zener
IGSS - - 1 µA VGS=20V,VDS=0V
diode
- 1.7 2.0 VGS=10V,ID=0.94A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 4.4 - VGS=10V,ID=0.94A,Tj=150°C
Gate resistance RG - 4.0 - Ω f=250kHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 175 - pF VGS=0V,VDS=500V,f=250kHz
Output capacitance Coss - 4.0 - pF VGS=0V,VDS=500V,f=250kHz
Effective output capacitance, energy
Co(er) - 7 - pF VGS=0V,VDS=0to500V
related1)
Effective output capacitance, time
Co(tr) - 61 - pF ID=constant,VGS=0V,VDS=0to500V
related2)
VDD=400V,VGS=13V,ID=0.94A,
Turn-on delay time td(on) - 10 - ns
RG=33Ω
VDD=400V,VGS=13V,ID=0.94A,
Rise time tr - 8 - ns
RG=33Ω
VDD=400V,VGS=13V,ID=0.94A,
Turn-off delay time td(off) - 40 - ns
RG=33Ω
VDD=400V,VGS=13V,ID=0.94A,
Fall time tf - 20 - ns
RG=33Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 0.6 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate to drain charge Qgd - 4 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate charge total Qg - 9 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=0.94A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
Final Data Sheet 4 Rev.2.1,2018-02-09
 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.94A,Tf=25°C
Reverse recovery time trr - 730 - ns VR=400V,IF=0.47A,diF/dt=50A/µs
Reverse recovery charge Qrr - 3.0 - µC VR=400V,IF=0.47A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.47A,diF/dt=50A/µs

Final Data Sheet 5 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
8 102

101 100 µs 10 µs 1 µs
1 ms
6
10 ms
0
10

DC
Ptot[W]

ID[A]
4 10-1

10-2

10-3

0 10-4
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 102

101 1 µs
100 µs 10 µs
1 ms
10 ms 0.5
100 101

DC 0.2
ZthJC[K/W]
ID[A]

10-1 0.1
0.05
0.02
0.01
10-2 100 single pulse

10-3

10-4 10-1
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 6 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
8 4.5
20 V 10 V
20 V
8V
7 7V 4.0 10 V
8V
7V
3.5 6V
6
6V
3.0 5.5 V
5
5V
2.5
ID[A]

ID[A]
4
5.5 V
2.0

3
1.5 4.5 V
5V
2
1.0

4.5 V
1 0.5

0 0.0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
10 5.4
5V 6V
6.5 V
5.5 V 5.0
9 7V
10 V 4.6

8 4.2

3.8
7
3.4
RDS(on)[Ω]

RDS(on)[Ω]

6 3.0

2.6
5 98%
2.2

4 1.8 typ

1.4
3
1.0

2 0.6
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=0.94A;VGS=10V

Final Data Sheet 7 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
7 10

9
25 °C
6
8

5 7

120 V 640 V
6
4

VGS[V]
ID[A]

5
150 °C
3
4

2 3

2
1
1

0 0
0 2 4 6 8 10 12 0 2 4 6 8 10
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.94Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 7
25 °C
125 °C
6

5
101

4
EAS[mJ]
IF[A]

100
2

10-1 0
0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=0.4A;VDD=50V

Final Data Sheet 8 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
950 104

900 103

Ciss
2
850 10
VBR(DSS)[V]

C[pF]
800 101 Coss

750 100
Crss

700 10-1
-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
2.0

1.8

1.6

1.4

1.2
Eoss[µJ]

1.0

0.8

0.6

0.4

0.2

0.0
0 100 200 300 400 500 600 700 800
VDS[V]
Eoss=f(VDS)

Final Data Sheet 9 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 10 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

6PackageOutlines

DOCUMENT NO.
Z8B00180553

SCALE 0
MILLIMETERS
DIM
MIN MAX 2.5
A 1.52 1.80
A1 - 0.10 0 2.5
A2 1,50 1.70 5mm
b 0.60 0.80
b2 2.95 3.10
EUROPEAN PROJECTION
c 0.24 0.32
D 6.30 6.70
E 6.70 7.30
E1 3.30 3.70
e 2.3 BASIC
e1 4.6 BASIC ISSUE DATE
L 0.75 1.10 24-02-2016
N 3
O REVISION
01

Figure1OutlinePG-SOT223,dimensionsinmm-IndustrialGrade

Final Data Sheet 11 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

7AppendixA

Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 12 Rev.2.1,2018-02-09

 800VCoolMOSªP7PowerTransistor
IPN80R2K0P7

RevisionHistory
IPN80R2K0P7

Revision:2018-02-09,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-06-23 Release of final version
2.1 2018-02-09 Corrected front page text

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AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet 13 Rev.2.1,2018-02-09

Mouser Electronics

Authorized Distributor

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